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Voltage Pentode or Tetrode (under 100V) ·Diode-Diode-Pentode

EBF83

Double-diode pentode for receiver amplification and detector service, notable for useful operation at unusually low electrode voltages. Two diodes provide associated detection and rectification functions.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
NOVAL
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 300 mA

Description

Double-diode variable-mu RF pentode for battery-operated equipment and low-voltage receiver service.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
NOVAL
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

NOVAL - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
200000 Ω
Transconductance
0.0021 S
Max plate voltage
50 V
Max screen voltage
50 V
Max cathode current
5 mA

Promoted from clearly identified published ratings/characteristics; additional operating points, capacitances, detector data, microwave data, and special-quality limits are retained in TUBE_SECTION_PARAMETER.

Section 2

Diode

X-ray radiationInterelectrode capacitances
Rectifier nominal output current
0.8 mA
Rectifier peak forward current
5 mA

Promoted from clearly identified published ratings/characteristics; additional operating points, capacitances, detector data, microwave data, and special-quality limits are retained in TUBE_SECTION_PARAMETER.

Section 3

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Promoted from clearly identified published ratings/characteristics; additional operating points, capacitances, detector data, microwave data, and special-quality limits are retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    250 V

    RFIFAmplifier

  • Screen voltage

    25 V

    RFIFAmplifier

  • Control-grid voltage

    -2 V

    RFIFAmplifier

  • Plate current

    1.7 mA

    RFIFAmplifier

  • Screen current

    0.5 mA

    RFIFAmplifier

Characteristic

  • Transconductance

    2100 µS

    Section1

  • Plate resistance

    200000 Ω

    Section1

Capacitance

  • Plate capacitance

    5.2 pF

    Section1

  • Grid capacitance

    5 pF

    Section1

  • Grid-to-plate capacitance maximum

    0.0025 pF

    Section1

SECTION 2

Diode

Capacitance

  • Diode capacitance

    2.5 pF

    Diode1

SECTION 3

Diode

Capacitance

  • Diode capacitance

    2.5 pF

    Diode2

Data set 02

1967 Mullard Receiving and Amplifying Valves

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Plate Current

    0.12 mA

    PlateAndScreen=6.3V

  • Screen Current

    0.04 mA

    PlateAndScreen=6.3V

  • Transconductance

    450 uS

    PlateAndScreen=6.3V

  • Plate Resistance

    0.65 Mohm

    PlateAndScreen=6.3V

  • Plate Current

    0.45 mA

    PlateAndScreen=12.6V

  • Screen Current

    0.14 mA

    PlateAndScreen=12.6V

  • Transconductance

    1000 uS

    PlateAndScreen=12.6V

  • Plate Resistance

    1 Mohm

    PlateAndScreen=12.6V

  • Plate Current

    1.7 mA

    PlateAndScreen=25V

  • Screen Current

    0.5 mA

    PlateAndScreen=25V

  • Transconductance

    2100 uS

    PlateAndScreen=25V

  • Plate Resistance

    0.2 Mohm

    PlateAndScreen=25V

  • Plate Resistance

    200000 ohm

  • Transconductance

    2100 uS

Other

  • Maximum Plate Voltage

    50 V

  • Maximum Screen Voltage

    50 V

  • Maximum Cathode Current

    5 mA

  • Interelectrode Capacitance Data Published

    1

    SourceTablePresent

SECTION 2

Diode

Other

  • Maximum Anode Current

    800 uA

    EachDiode

  • Maximum Peak Anode Current

    5 mA

    EachDiode

  • Nominal Output Current

    0.8 mA

  • Peak Forward Current

    5 mA

  • Interelectrode Capacitance Data Published

    1

    SourceTablePresent

Data set 03

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    300 mA

  • Typical plate voltage

    25 V

  • Transconductance

    2100 uS

  • Plate resistance

    0.2 Mohm

  • Plate current

    1.7 mA

    PlateAndScreenVoltage=25V

  • Screen current

    0.5 mA

    PlateAndScreenVoltage=25V

Other

  • Maximum plate voltage

    50 V

Capacitance

  • Plate output capacitance

    5.2 pF

  • Grid input capacitance

    5 pF

  • Plate-grid capacitance maximum

    0.0025 pF

SECTION 2

Diode

Other

  • Maximum diode current

    0.8 mA

  • Maximum diode peak current

    5 mA