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Voltage Radio Detector Converter ·Diode-Diode-Pentode

EBF80

Double-diode variable-mu pentode for RF/IF amplification, detection, and automatic-volume-control service. The pentode provides controlled gain while paired diodes handle detector and AVC rectification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
NOVAL
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 300 mA

Description

Dual-diode pentode for detection and RF or IF amplification; source also designates 6N8.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
NOVAL
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

NOVAL - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1400000 Ω
Transconductance
0.0022 S
Amplification factor
18
Max plate voltage
300 V
Max screen voltage
250 V
Max plate dissipation
2 W
Max screen dissipation
0.3 W
Max cathode current
10 mA

Published ratings/characteristics promoted where clearly stated; repeated identical sections compressed where applicable.

Section 2

Diode

X-ray radiationInterelectrode capacitances
Max cathode current
0.8 mA
Rectifier peak inverse voltage
350 V
Rectifier nominal output current
0.8 mA
Rectifier peak forward current
5 mA
Rectifier max heater-cathode voltage
100 V

Source-published values promoted where directly stated; additional values retained in parameter table.

Section 3

Diode

X-ray radiationInterelectrode capacitances
Max cathode current
0.8 mA
Rectifier peak inverse voltage
350 V
Rectifier nominal output current
0.8 mA
Rectifier peak forward current
5 mA
Rectifier max heater-cathode voltage
100 V

Source-published values promoted where directly stated; additional values retained in parameter table.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1951 Mullard Valve and Service Manual

Published operating points and test conditions from this source.

SECTION 2

Diode

Characteristic

  • Heater Voltage

    6.3 V

  • Heater Current

    300 mA

Data set 02

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    300 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Screen Dissipation

    0.3 W

SECTION 2

Diode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    300 mA

    Published nominal value

  • Transconductance

    2200 µS

    Published operating characteristic

Other

  • Maximum plate dissipation

    1.7 W

    Published maximum rating

Data set 03

1958 Brimar Radio Valve No 7

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • Application

    VariableMuPentode

SECTION 2

Diode

Characteristic

  • Heater Voltage

    6.3 V

  • Heater Current

    300 mA

Data set 04

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Cutoff characteristic

    Variable-mu

Application

  • Application

    RF / IF / AF amplifier

SECTION 2

Diode

Application

  • Application

    Detector / AVC

Data set 05

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    250 V

    RFIFAmplifier

  • Screen voltage

    85 V

    RFIFAmplifier

  • Control-grid voltage

    -2 V

    RFIFAmplifier

  • Plate current

    5 mA

    RFIFAmplifier

  • Screen current

    1.75 mA

    RFIFAmplifier

Characteristic

  • Transconductance

    2200 µS

    Section1

  • Plate resistance

    1400000 Ω

    Section1

Capacitance

  • Plate capacitance

    5.2 pF

    Section1

  • Grid capacitance

    4.2 pF

    Section1

  • Grid-to-plate capacitance maximum

    0.0025 pF

    Section1

SECTION 2

Diode

Capacitance

  • Diode capacitance

    2.2 pF

    Diode1

SECTION 3

Diode

Capacitance

  • Diode capacitance

    2.35 pF

    Diode2

Data set 06

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Vg2 max. (la =

    5 mA

    Published in approved EBF80.pdf target datasheet; Section1

  • Ik max

    10 mA

    Published in approved EBF80.pdf target datasheet; Section1

  • I' d max

    0.8 mA

    Published in approved EBF80.pdf target datasheet; Section1

  • iadlPk) max

    5 mA

    Published in approved EBF80.pdf target datasheet; Section1

  • input vo ltage , '.lIn, is not less t han

    25 mV

    Published in approved EBF80.pdf target datasheet; Section1

  • input vo ltage , '.lIn, is not less t han 25 mV for an ou tput o f

    50 mW

    Published in approved EBF80.pdf target datasheet; Section1

SECTION 2

Diode

Other

  • Vg2 max. (la =

    5 mA

    Published in approved EBF80.pdf target datasheet; Section2

  • Ik max

    10 mA

    Published in approved EBF80.pdf target datasheet; Section2

  • I' d max

    0.8 mA

    Published in approved EBF80.pdf target datasheet; Section2

  • iadlPk) max

    5 mA

    Published in approved EBF80.pdf target datasheet; Section2

  • input vo ltage , '.lIn, is not less t han

    25 mV

    Published in approved EBF80.pdf target datasheet; Section2

  • input vo ltage , '.lIn, is not less t han 25 mV for an ou tput o f

    50 mW

    Published in approved EBF80.pdf target datasheet; Section2

Data set 07

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Application

  • Application

    RF_IF_Amplifier text

SECTION 2

Diode

Application

  • Application

    Detector text

Data set 08

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Anode current Ia

    5 mA

  • Transconductance S

    2.2 mA/V

  • Heater voltage Ve

    6.3 V

  • Heater current If

    300 mA

  • Anode voltage Vao max

    - to 550 V

    Maximum

  • Va max

    - to 300 V

    Maximum

  • Anode dissipation W, max

    - to 1.5 W

    Maximum

  • Grid No.2 voltage Vg20 max

    - to 550 V

    Maximum

  • at anode current I3 = max

    - to 2.5 mA

    Maximum

  • at anode current Ia =

    - to 5 mA

    Maximum

  • Grid No.2 dissipation Wgz max

    - to 0.3 W

    Maximum

  • Cathode current Ix max

    - to 10 mA

    Maximum

  • Grid resistor, automatic bias Rgl max

    - to 3 MQ

    Maximum

  • Grid resistor, grid current bias Rgl max

    - to 22 MQ

    Maximum

  • Cathode to heater voltage Vs max

    - to 100 V

    Maximum

  • input voltage is min. 25 mV for an output of

    50 to - mW

    Minimum

Capacitance

  • Anode to all except grid No.1 Ca(gl)

    4.9 pF

  • Grid No.1 to all except anode Cgl(a)

    4.2 pF

  • Anode to grid No.l Cagl max

    - to 0.0025 pF

    Maximum

  • Grid No.1 to heater Cglf max

    - to 0.07 pF

    Maximum

  • Diode No.1 to grid No.1 Cd1g1 max

    - to 0.0008 pF

    Maximum

  • Diode No.2 to grid No.1 Cdzdl max

    - to 0.001 pF

    Maximum

  • Diode No.l to anode Cd;a max

    - to 0.2 pF

    Maximum

  • Diode No.2 to anode Cdza max

    - to 0.05 pF

    Maximum

Characteristic

  • Supply voltage Vb

    250 A

  • Grid No.3 voltage Vg3

    0 v

  • Grid No.2 resistor Rg2

    95 k2

  • Grid No.l voltage Vg -2

    -41.5 V

  • Internal resistance Ry 1.4 min

    10 to - MQ

    Minimum

  • Supply voltage Vb 250 250 250

    250 V

  • Grid No.2 resistor Rg2 0.82 0.39 1.0

    0.47 MQ

  • Grid No.l resistor Rgl 1 1 10

    10 MQ

  • Grid No.1 resistor next stage Rg' 0.68 0.33 0.68

    0.33 MQ

  • Anode current Ia 0.75 1.5 0.75

    1.5 mA

  • Grid No.2 current Ig2 0.30 0.53 0.25

    0.5 mA

  • at output voltage Vo =

    3 VRMS

  • at output voltage Vo =

    5 VRMs

  • Supply voltage Vb 250 250 250

    250 V

  • Anode resistor R, 0.1 0.047 0.1

    0.047 MQ

  • Grid No.1 resistor Rgl 1 1 10

    10 MQ

  • Grid No.l resistor next stage Rg! 0.33 0.15 0.33

    0.15 MQ

  • Anode current I, 2.08 4.10 2.16

    4.5 mA

  • at output voltage V, =

    3 VRMS

  • at output voltage Vo =

    5 VRMS

  • at output voltage V, =

    8 VRMS

SECTION 2

Diode

Capacitance

  • Diode No.!l to all Cdl

    2.2 pF

  • Diode No.2 to all Cd2

    2.35 pF

  • Diode No.1 to diode No.2 CdldZ max

    - to 0.35 pF

    Maximum

  • Diode No.l to heater Cdlf max

    - to 0.02 pF

    Maximum

  • Diode No.?2 to heater Cd2f max

    - to 0.005 pF

    Maximum

Other

  • Diode No.l voltage, negative peak -Vdp max

    - to 350 V

    Maximum

  • Diode No.2 voltage, negative peak —Vdp max

    - to 350 V

    Maximum

  • Diode No.l current Id1 max

    - to 0.8 mA

    Maximum

  • Diode No.2 current Id2 max

    - to 0.8 mA

    Maximum

  • Diode No.l current, peak Idlp max

    - to 5 mA

    Maximum

  • Diode No.2 current, peak IdZp max

    - to 5 mA

    Maximum

  • Cathode to heater voltage Vkf max

    - to 100 V

    Maximum

Data set 09

1973 Mazda Valves Binder 2

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    300 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    300 V

  • Maximum Plate Dissipation

    1.5 W

  • Maximum Screen Dissipation

    0.3 W

  • Maximum Cathode Current

    10 mA

Characteristic

  • Transconductance

    2200 µS

    Typical

  • Amplification Factor

    18

    Typical

  • Plate Resistance

    1500000 ohm

    Typical

SECTION 2

Diode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    300 mA

    Nominal

  • Maximum Cathode Current

    0.8 mA

SECTION 3

Diode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    300 mA

    Nominal

  • Maximum Cathode Current

    0.8 mA

Data set 10

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    300 mA

  • Typical plate voltage

    250 V

  • Transconductance

    2200 uS

  • Plate resistance

    1.4 Mohm

Other

  • Maximum plate voltage

    300 V

  • Maximum plate dissipation

    1.5 W

Capacitance

  • Plate output capacitance

    4.9 pF

  • Grid input capacitance

    4.2 pF

  • Plate-grid capacitance maximum

    0.0025 pF

SECTION 2

Diode

Other

  • Maximum diode current

    0.8 mA

  • Maximum diode peak current

    5 mA