EBF32

Double-diode pentode combining receiver amplification with two independent signal-rectifying elements. The pentode supplies gain while paired diodes support detector and control-voltage functions.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 3
Base: -
Socket code: SIDE8
Base pins: 8
Nominal heater: 6.3 V / 200 mA

Description

Variable-mu double-diode pentode for HF and IF amplification. The supplied Philips source was read for heater data, capacitances, ratings, characteristics and operating conditions, with repeated identical diode sections compressed only in the technical section table.

Socket description

European side-contact 8-contact base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: SIDE8
Base pins: 8
Nominal heater voltage: 6.3 V
Nominal heater current: 200 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: Yes

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances

Rectifier peak inverse voltage: 350 V
Rectifier nominal output current: 0.8 mA
Rectifier peak forward current: 5 mA

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Second physical diode section added in approved reconciliation.

Section 3

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 1300000 Ω
Transconductance: 0.0018 S
Amplification factor: 19
Max plate voltage: 300 V
Max screen voltage: 300 V
Max plate dissipation: 1.5 W
Max screen dissipation: 0.3 W
Max cathode current: 10 mA

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

Maximum diode current
0.8 mA
Maximum diode peak current
5 mA

SECTION 3

Pentode

Characteristics

Heater voltage
6.3 V
Heater current
200 mA
Typical plate voltage
250 V
Transconductance
1800 uS
Plate resistance
1.3 Mohm
Screen-grid amplification factor
19

Other

Maximum plate voltage
300 V
Maximum plate dissipation
1.5 W