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Voltage Radio Detector Converter ·Diode-Pentode

EBF11

Diode-pentode for receiver signal detection and voltage amplification. The high-resistance pentode supplies small-signal gain while the separate diode provides detector or control-voltage rectification.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 2
Base: -
Socket code: P8A
Base pins: 8
Nominal heater: 6.3 V / 200 mA

Description

Double-diode remote-cutoff pentode for RF, IF, and audio-frequency service.

Socket description

European 8-pin side-contact base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: P8A
Base pins: 8
Nominal heater voltage: 6.3 V
Nominal heater current: 200 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances

Max plate voltage: 300 V
Rectifier peak inverse voltage: 200 V
Rectifier nominal output current: 0.8 mA
Rectifier peak forward current: 5 mA

Published ratings/characteristics promoted where clearly stated; repeated identical sections compressed where applicable.

Section 2

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 500000 Ω
Transconductance: 0.0018 S
Amplification factor: 19
Max plate voltage: 300 V
Max screen voltage: 300 V
Max plate dissipation: 1.5 W
Max screen dissipation: 0.3 W
Max cathode current: 10 mA

Published ratings/characteristics promoted from approved source.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

Heater voltage
6.3 V
Published nominal value
Heater current
200 mA
Published nominal value
Transconductance
1800 µS
Published operating characteristic

Other

Maximum plate dissipation
1.5 W
Published maximum rating

SECTION 2

Pentode

Other

HeaterVoltageNominal
6.3 V
Nominal
HeaterCurrentNominal
200 mA
Nominal
Maximum Plate Voltage
300 V
Maximum Screen Voltage
300 V
Maximum Plate Dissipation
1.5 W
Maximum Screen Dissipation
0.3 W

Characteristic

Transconductance
1800 µS
Typical
Plate Resistance
500000 ohm
Typical

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

Maximum diode current
0.8 mA
Maximum diode peak current
5 mA

SECTION 2

Pentode

Characteristics

Heater voltage
6.3 V
Heater current
200 mA
Typical plate voltage
250 V
Transconductance
1800 uS
Plate resistance
2 Mohm
Screen-grid amplification factor
19

Other

Maximum plate voltage
300 V
Maximum plate dissipation
1.5 W