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Diode (NOT rectifier) ·Diode-Diode

EAA91

Low-resistance dual diode designed for FM ratio detectors and related high-frequency detector circuits, with resonance around 700 MHz.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
-
Socket code
B7G
Base pins
7
Nominal heater
6.3 V / 300 mA

Description

Low-resistance dual diode for FM ratio detectors and related detector circuits.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B7G
Base pins
7
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances
Max plate dissipation
0.25 W
Max cathode current
10 mA
Rectifier peak inverse voltage
420 V
Rectifier nominal output current
9 mA
Rectifier peak forward current
60 mA
Rectifier max heater-cathode voltage
330 V

Representative row for repeated identical sections. Explicit equivalent designation published on E91AA datasheet; record duplicated under alias.

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Physical diode section added during approved section-structure reconciliation.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    300 mA

    Published nominal value

Data set 02

195X Tesla

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Interelectrode capacitances

    Published

    See source sheet for electrode-specific capacitance values

Data set 03

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Diode

Capacitance

  • Diode capacitance with external shielding

    3 pF

    EachSection

  • Diode capacitance without external shielding

    2.5 pF

    EachSection

Other

  • AC transformer voltage maximum

    150 V RMS

    HalfWave;EachSection

  • DC output current maximum

    9 mA

    HalfWave;EachSection

  • Filter capacitance maximum

    8 µF

    HalfWave;EachSection

  • Series resistance minimum

    300 Ω

    HalfWave;EachSection

  • Peak inverse voltage maximum

    420 V

    EachSection

  • Peak diode current maximum

    54 mA

    EachSection

Data set 04

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Forward current at 10 V

    60 mA

    Nominal

  • Resonance frequency

    700 MHz

Other

  • Peak diode current

    60 mA

Data set 05

1969 Tesla Manual of Electronic Tubes

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    300 mA

    Published nominal value

Other

  • Maximum output current

    9 mA

    Per section

Data set 06

1972 Philips Receiving Tubes

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

  • A.C, supply voltage Vir

    150 VRMS

  • D.C. current per system Ip

    9 mA

  • Heater voltage Vi

    6.3 V

  • Heater current It

    300 mA

  • Diode voltage, negative peak ‘Vdp max

    - to 420 V

    Maximum

  • Diode current Iq max

    - to 9 mA

    Maximum

  • Diode current, peak Id_p max

    - to 54 mA

    Maximum

  • Cathode to heater voltage peak (k neg) kap (k neg) max

    - to 150 V

    Maximum

  • Cathode to heater voltage, peak (k pos) kap (k pos) max

    - to 330 V

    Maximum

  • D.C. component max

    - to 200 V

    Maximum

  • D.C. current Ip max

    - to 9 mA

    Maximum

  • Cathode to heater voltage, peak (k pos) kap (k pos) max

    - to 330 V

    Maximum

  • D.C. component max

    - to 200 V

    Maximum

Capacitance

  • Diode No.1 to all Cdl 3.0

    2.5 pF

  • Diode No.2 to all Cd2 3.0

    2.5 pF

  • Diode No.1 to diode No.2 Cd1d2 max.0.026 max

    - to 0.068 pF

    Maximum

  • Cathode No.1 to all Ckl 3.4

    3.4 pF

  • Cathode No.2 to all Ck2 3.4

    3.4 pF

Data set 07

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristic

  • alimentation paralldle ou Ve =

    6.3 V

    Published datasheet value

  • Ca1 =

    3 pF

    Published datasheet value

  • Ca2 =

    2.5 pF

    Published datasheet value

  • Cat1d2 <

    0.068 pF

    Published datasheet value

  • Cx1 =

    3.4 pF

    Published datasheet value

  • Cx2 =

    3.4 pF

    Published datasheet value

  • Io =max,

    9 mA

    Published datasheet value

  • Ry = min

    300 Q

    Published datasheet value

  • Composante C.C, max,

    165 V

    Published datasheet value

  • Gleichspannungsanteil max,

    200 V

    Published datasheet value

  • teil max

    165 V

    Published datasheet value