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Diode (NOT rectifier) ·Diode

EA53

RF measuring diode designed specifically for voltage measurement at frequencies to approximately 1 GHz, providing thermionic rectification for high-frequency instrumentation.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
3
Nominal heater
6.3 V / 300 mA

Description

Measuring diode for RF voltage measurement at frequencies up to about 1000 MHz.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
3
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances
Rectifier peak inverse voltage
1000 V
Rectifier peak forward current
5 mA

Promoted from clearly identified published ratings/characteristics; additional operating points, capacitances, detector data, microwave data, and special-quality limits are retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Diode

Capacitance

  • Anode-to-cathode capacitance maximum

    0.5 pF

    Section1

Other

  • Diode current

    0.5 mA

    MeasuringDiode

  • Peak inverse voltage maximum below 100 MHz

    1000 V

    MeasuringDiode

  • Cathode current maximum

    300 µA

    Section1

  • Peak cathode current maximum

    5 mA

    Section1

  • Heater-to-cathode voltage maximum

    50 V

    Section1

  • Maximum operating frequency

    1000 MHz

    MeasuringDiode

Characteristic

  • Diode voltage maximum

    3 V

    At0.5mA

Data set 02

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristic

  • ¥EASURING DIODE for frequencies up to

    1000 MHz

    Published datasheet value

  • Heater voltage Vr =

    6.3 V

    Published datasheet value

  • Heater current Ir =

    300 mA

    Published datasheet value

  • Between anode and cathode Ca <

    0.5 pF

    Published datasheet value

  • Heater voltage Ve =

    6.3 V

    Published datasheet value

  • Diode current Ig

    0.5 mA

    Published datasheet value

  • Diode voltage Va <

    3 V

    Published datasheet value

  • at frequencies lower than

    100 MHz

    Published datasheet value

  • V4 invy (£ <

    1000 V

    Published datasheet value

  • at frequencies higher than

    100 MHz

    Published datasheet value

  • Va invp (£ >

    1000 V

    Published datasheet value

  • age from

    300 pA

    Published datasheet value

  • cathode Ver = max

    50 V

    Published datasheet value

  • _ max

    7 V

    Published datasheet value

  • Yt = gin,

    5.6 V

    Published datasheet value

  • curve a%

    1000 MHz

    Published datasheet value

  • (%) H vf=

    63 V

    Published datasheet value

  • Vp=

    6.3 V

    Published datasheet value