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E810F

Very-high-transconductance special-quality pentode documented by Philips for demanding professional amplification. Its defining characteristics are unusually high transconductance and premium construction rather than a separately documented specialized application.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: NOVAL
Socket code: B9A
Base pins: 9
Nominal heater: 6.3 V / 340 mA

Description

E810F is described in the supplied Philips material as a very-high-transconductance special-quality pentode. Published electrical ratings and characteristics were extracted from the supplied datasheet.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: NOVAL
Socket code: B9A
Base pins: 9
Nominal heater voltage: 6.3 V
Nominal heater current: 340 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

NOVAL - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 42000 Ω
Transconductance: 0.05 S
Max plate voltage: 250 V
Max screen voltage: 200 V
Max plate dissipation: 5 W
Max screen dissipation: 1 W
Max grid dissipation: 0.01 W
Max cathode current: 50 mA

Special-quality long-life shock- and vibration-resistant very-high-transconductance wide-band amplifier pentode.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Philips Electron Tubes Handbook V1a

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Plate supply voltage
135 V
Screen supply voltage
165 V
Plate current
35 mA

Characteristic

Screen current
4.4 to 5.6 mA
Transconductance
42000 to 58000 uS
Plate resistance
42 kOhm
Equivalent noise resistance
110 ohm

Capacitance

Grid capacitance
13 to 16 pF
Plate capacitance
3.9 to 4.3 pF

Data set 02

1963 Philips Electron Tubes Handbook V3

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Heater voltage
6.3 V
Published heater rating
Heater current
340 mA
Published heater rating
Transconductance
50000 µS
Published characteristic point
Amplification factor
57
Published characteristic point

Other

Plate supply voltage
135 V
Published characteristic point
Screen supply voltage
165 V
Published characteristic point
Grid bias
12.5 V
Published characteristic point
Plate current
35 mA
Published characteristic point
Screen current
5 mA
Published characteristic point

Capacitance

Plate capacitance
3.5 pF
Published
Input capacitance
14.5 pF
Published

Data set 03

1963 Siemens

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Typical Screen Voltage
165 V
PentodeConnection
Typical Plate Current
35 mA
PentodeConnection
Typical Screen Current
5 mA
PentodeConnection

Data set 04

1999 Philips E-Z

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Heater voltage
6.3 V
Published datasheet value
Heater voltage
6 V
Published datasheet value
Heater current
340 mA
Published datasheet value
Heater current
360 mA
Published datasheet value

Characteristics

Anode current
35 mA
Published datasheet value
Anode current
39 mA
Published datasheet value
Anode current
40 mA
Published datasheet value
Anode voltage
250 V
Published datasheet value
Screen-grid voltage
200 V
Published datasheet value
Mutual conductance
50 mA/V
Published datasheet value
Equivalent noise resistance
110 Ohm
Published datasheet value
Quality factor frequency
250 MHz
Published datasheet value