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Voltage Pentode - High Frequency (single) ·Pentode

E1F

Pentode designed for RF amplification to approximately 430 MHz. Philips documentation provides heater data, electrical characteristics, ratings, and section-specific information for high-frequency signal-amplifier service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
6.3 V / 150 mA

Description

Pentode intended for RF amplification up to about 430 Mc/s. The record captures the published heater data, principal electrical characteristics, ratings, and other section-specific values from the supplied datasheet.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
6.3 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1500000 Ω
Transconductance
0.0014 S
Max plate voltage
250 V
Max screen voltage
100 V
Max plate dissipation
0.8 W
Max screen dissipation
0.15 W
Max cathode current
5 mA

Published section data promoted where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

No source-specific operating conditions are recorded.