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Voltage Pentode - Remote Cutoff (single) ·Pentode

DF96

Directly heated variable-mu voltage pentode designed for RF amplification. Its low-power filament and gradual cutoff characteristic support controlled gain in portable battery-operated high-frequency equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
B7G
Socket code
B7G
Base pins
7
Nominal heater
1.4 V / 25 mA

Description

Directly heated variable-mu voltage pentode for RF amplification.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
B7G
Socket code
B7G
Base pins
7
Nominal heater voltage
1.4 V
Nominal heater current
25 mA
Parallel heater voltage
1.4 V
Parallel heater current
25 mA
Series capable
No

B7G - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1000000 Ω
Transconductance
0.00085 S
Amplification factor
18
Max plate voltage
120 V
Max screen voltage
90 V
Max plate dissipation
0.25 W
Max screen dissipation
0.1 W
Max cathode current
2.2 mA

Published ratings and characteristics promoted from the printed technical data.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    1.4 V

    Nominal

  • HeaterCurrentNominal

    25 mA

    Nominal

  • Maximum Plate Voltage

    120 V

  • Maximum Screen Voltage

    90 V

  • Maximum Plate Dissipation

    0.25 W

  • Maximum Screen Dissipation

    0.1 W

  • Maximum Cathode Current

    2.2 mA

Characteristic

  • Transconductance

    850 µS

    Typical

  • Plate Resistance

    1000000 ohm

    Typical

Data set 02

1958 Brimar Radio Valve No 7

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Cutoff characteristic

    Variable-mu

Application

  • Application

    RF / IF amplifier

Data set 03

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Cutoff characteristic

    Variable-mu

Application

  • Application

    IF amplifier

Data set 04

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Filament Voltage Series

    1.3 V

  • Filament Current Series

    24 mA

  • Filament Voltage Parallel

    1.4 V

  • Filament Current Parallel

    25 mA

  • Transconductance

    850 uS

  • Plate Resistance

    1000000 ohm

    Representative

  • Grid Voltage at gm=10uS

    -5.5 V

    Representative

  • Plate-Grid Capacitance

    0.01 pF

    Maximum

  • Input Capacitance

    3.3 pF

Other

  • Plate Voltage

    85 V

    IFAmplifier

  • Screen Voltage

    64 V

    IFAmplifier

  • Plate Current

    1.65 mA

    IFAmplifier

  • Screen Current

    0.55 mA

    IFAmplifier

  • Maximum Plate Voltage

    110 V

    Absolute

  • Maximum Screen Voltage

    90 V

  • Maximum Plate Dissipation

    0.25 W

  • Maximum Screen Dissipation

    0.1 W

  • Maximum Cathode Current

    2.2 mA

Data set 05

1963 Philips Electron Tubes Handbook V1

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Grid-to-plate capacitance

    - to 0.07 pF

  • Plate capacitance

    7.8 pF

Other

  • Plate voltage

    85 V

    RF/IF amplifier

  • Screen voltage

    64 V

    RF/IF amplifier

  • Plate voltage

    45 V

    LowVoltage

  • Plate current

    0.85 mA

    LowVoltage

  • Screen current

    0.28 mA

    LowVoltage

Characteristic

  • Transconductance

    850 uS

    RF/IF amplifier

Data set 06

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Plate-to-Input Capacitance

    <0.01 pF

    PublishedCapacitance

  • Input Capacitance

    3.3 pF

    PublishedCapacitance

  • Output Capacitance

    7.8 pF

    PublishedCapacitance

Other

  • Plate Supply Voltage

    85 V

    IFAmplifier;85VSupply

  • Screen Resistor

    39 kohm

    IFAmplifier;85VSupply

  • Screen Voltage

    64 V

    IFAmplifier;85VSupply

  • Plate Current

    1.65 mA

    IFAmplifier;85VSupply

  • Screen Current

    550 uA

    IFAmplifier;85VSupply

  • Transconductance

    850 uS

    IFAmplifier;85VSupply

  • Plate Resistance

    1 Mohm

    IFAmplifier;85VSupply

  • Screen-to-Control-Grid Mu

    18

    IFAmplifier;85VSupply

  • Grid Voltage for 10uS Transconductance

    -5.5 V

    IFAmplifier;85VSupply

  • Supply Voltage Absolute

    110 V

    PublishedLimits

  • Plate Voltage

    90 V

    PublishedLimits

  • Plate Dissipation

    0.25 W

    PublishedLimits

  • Screen Voltage

    90 V

    PublishedLimits

  • Screen Dissipation

    0.1 W

    PublishedLimits

  • Cathode Current

    2.2 mA

    PublishedLimits

Data set 07

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Application

  • Application

    RFAmplifier text

Data set 08

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Parallel heater voltage

    1.4 V

    Published datasheet value

  • Series heater voltage

    1.3 V

    Published datasheet value

  • Anode voltage

    85 V

    Published datasheet value

  • Screen-grid voltage

    64 V

    Published datasheet value

  • Anode current

    1.65 mA

    Published datasheet value

  • Screen-grid current

    0.55 mA

    Published datasheet value

Characteristics

  • Transconductance

    850 µS

    Published datasheet value

  • Internal resistance

    1 MΩ

    Published datasheet value

  • Equivalent noise resistance

    14 kΩ

    Published datasheet value

  • Screen-grid amplification factor

    18

    Published datasheet value

  • Anode-grid capacitance

    - to 0.01 pF

    Published datasheet value

  • Input capacitance

    7.8 pF

    Published datasheet value