Data set 01
1958 Mullard Receiving Tubes
Published operating points and test conditions from this source.
SECTION 1
Pentode
Characteristics
Cutoff characteristic
Sharp cutoff
Application
Application
RF amplifier
Voltage Pentode or Tetrode (under 100V) ·Pentode
DF62
Mullard subminiature sharp-cutoff RF pentode for battery equipment and frequency-changer service. Manufacturer data document both RF amplification and conversion operation from low-voltage battery supplies.
Directly heatedCold cathodeCommon cathodeDissimilar
- Sections
- 1
- Base
- SUBMINIATURE
- Socket code
- WIRE8
- Base pins
- 8
- Nominal heater
- 1.25 V / 100 mA
Description
The Mullard DF62 is a subminiature sharp-cutoff RF pentode for battery equipment and frequency-changer service.
Socket description
Subminiature all-glass 8-wire lead family
General specifications
Tube and section characteristics
Properties common to every published source and operating point.
Heater and base
- Base
- SUBMINIATURE
- Socket code
- WIRE8
- Base pins
- 8
- Nominal heater voltage
- 1.25 V
- Nominal heater current
- 100 mA
- Parallel heater voltage
- -
- Parallel heater current
- -
- Series capable
- No
SUBMINIATURE - Terminal pinout
Electrical assignments shared by every tube using this base designation.
No verified pinout is recorded for this base designation.
Section ratings
1 physical section, each with unique specifications.
Section 1
Pentode
X-ray radiationInterelectrode capacitances
- Plate resistance
- 500000 Ω
- Transconductance
- 0.0026 S
- Max plate voltage
- 90 V
- Max screen voltage
- 90 V
- Max plate dissipation
- 0.55 W
- Max screen dissipation
- 0.2 W
- Max cathode current
- 6.5 mA
Fully shielded directly heated sharp-cutoff RF pentode for battery-operated equipment; supplied sheet explicitly co-designates DF62/1AD4.
Source-dependent data
Operating conditions by source
Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.
Data set 02
1963 Mullard
Published operating points and test conditions from this source.
SECTION 1
Pentode
Characteristics
Filament Voltage
1.25 V
DCOnly
Filament Current
100 mA
DCOnly
Plate Voltage
45 V
Screen Voltage
45 V
Plate Current
3 mA
Screen Current
0.8 mA
Transconductance
2000 uS
Plate Resistance
500000 ohm
Input Capacitance
4 pF
Output Capacitance
4 pF
Plate-Grid Capacitance
0.01 pF
Maximum
Other
Conversion Transconductance
600 uS
FrequencyChanger; Va=67.5V
Maximum Plate Voltage
90 V
Maximum Screen Voltage
90 V
Maximum Cathode Current
6.5 mA
Data set 03
1963 Philips Electron Tubes Handbook V1
Published operating points and test conditions from this source.
SECTION 1
Pentode
Capacitance
Grid-to-plate capacitance
- to 0.01 pF
Plate capacitance
4 pF
Control-grid capacitance
4 pF
Other
Plate voltage
90 V
RF amplifier
Screen voltage
90 V
RF amplifier
Plate current
5.7 mA
RF amplifier
Screen current
1.5 mA
RF amplifier
Characteristic
Transconductance
2600 uS
Plate resistance
0.5 Mohm
Cutoff grid voltage
-7 V
S=10uA/V
Data set 04
1999 Philips 0-D
Published operating points and test conditions from this source.
SECTION 1
Pentode
Capacitance
Plate-grid capacitance maximum
0.01 pF
Input capacitance
4 pF
Characteristics
Plate voltage
45 V
Screen voltage
45 V
Plate current
3.3 mA
Screen current
0.9 mA
Transconductance
2200 uS
Plate resistance
0.4 Mohm
Screen-grid amplification factor
17.5