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Voltage Pentode or Tetrode (under 100V) ·Pentode-Pentode

CK5970

Subminiature directly heated twin pentode intended for RF amplifier service, combining two compact pentode systems for high-frequency equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
8CD
Socket code
-
Base pins
8
Nominal heater
1.25 V / 160 mA

Description

Subminiature directly heated twin pentode for RF amplifier service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
8CD
Socket code
-
Base pins
8
Nominal heater voltage
1.25 V
Nominal heater current
160 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

8CD - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
170000 Ω
Transconductance
0.00185 S
Max plate voltage
45 V
Max screen voltage
45 V

Promoted only from clearly identified printed electrical values; additional values retained in TUBE_SECTION_PARAMETER.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
170000 Ω
Transconductance
0.00185 S
Max plate voltage
45 V
Max screen voltage
45 V

Second physical twin-pentode section restored.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X Raytheon Special Purpose Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    45 V

    RFAmplifier;EachSection

  • Grid resistor

    5 MΩ

    RFAmplifier;EachSection

  • Screen voltage

    45 V

    RFAmplifier;EachSection

  • Plate current

    3 mA

    RFAmplifier;EachSection

  • Screen current

    0.9 mA

    RFAmplifier;EachSection

Characteristic

  • Plate resistance

    0.17 MΩ

    EachSection

  • Transconductance

    1850 µS

    EachSection