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Voltage Pentode - High Frequency (single) ·Pentode

A3064GEC

Long-life GEC RF pentode for professional applications requiring closely controlled characteristics and dependable high-frequency amplification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 300 mA

Description

RF pentode for applications requiring long life and close control of characteristics.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Transconductance
0.00762 S
Max plate voltage
300 V
Max screen voltage
300 V
Max plate dissipation
2.5 W
Max screen dissipation
0.8 W

Promoted fields mapped semantically from printed ratings/characteristics headings.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • h a Base: Small-button miniature (B

    7 G

    h a Base: Small-button miniature (B7G)

  • PublishedData

    6.3 V

    6.3 V

  • PublishedData

    300 mA

    0.3 A

  • Va(o)

    550 V

    Va(o) 550 V

  • Va

    300 V

    Va 300 V

  • Pa

    2.5 W

    Pa 2.5 W

  • Vg2(o)

    450 V

    Vg2(o) 450 V

  • Vg2

    300 V

    Vg2 300 V

  • Pg2

    0.8 W

    Pg2 0.8 W

  • Rgl-k

    0.5 MOhm

    Rgl-k 0.5 MQ

  • Vh-k (heater positive)

    100 V

    Vh-k (heater positive) 100 V

  • Vh-k (heater negative)

    250 V

    -Vh-k (heater negative) 250 V

  • Tbulb

    200 degC

    Tbulb 200 °C

  • gm

    4.9 mA

    gm 4.9 mA/V

  • Ihk (Vhk ±100) 20 f

    1 A

    Ihk (Vhk ±100) 20 f.1A

  • Vc =

    250 V

    Vc =250V

  • t. V<j2=

    250 V

    t. V<j2=250V

  • Va = Vg2

    250 V

    Va = Vg2 250V

  • 351+++-l--l-l A-H-H--+-++++ Rk -1600 bypossed b~

    1000 pF

    351+++-l--l-l A-H-H--+-++++ Rk -1600 bypossed b~1000pF 14

  • f

    -45 MHz

    f -45 Mc/s

  • Va Vq2

    250 V

    Va Vq2 250V

  • Va -Vgz

    250 V

    Va -Vgz 250V i

  • f

    -45 MHz

    f -45Mc/s

  • gm V Ia at Vg3

    0 V

    gm V Ia at Vg3-0V

  • Va Vq2

    250 V

    Va Vq2 250V Rk (unb ypossed) 2

  • f =

    45 MHz

    f = 45 Mc/s -

Capacitance

  • Cgl-alliess a: 6.5-8

    7 pF

    Cgl-alliess a: 6.5-8. 7pF ca-alliess gl: 2.75-3. 75pF

  • Va

    250 V

    Va 250 V

  • Vg2

    250 V

    Vg2 250 V

  • Vg1

    0 V

    Vg1 0 V

  • *gm 6.8 7.62

    8.43 mA

    *gm 6.8 7.62 8.43 mA/V

  • Ig 0.5 f

    1 A

    -Ig 0.5 f.1A

  • Ia (at -Vgl ~

    8 V

    Ia (at -Vgl ~ 8V) 100 f.1A

  • *-Vg3 (at -Vgl ~

    3.5 V

    *-Vg3 (at -Vgl ~ 3.5V,

  • Ia ~ 50f

    1 A

    Ia ~ 50f.1A) 70 95 120 V