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Voltage - Triode (with diode, heptode or hexode) ·Diode-Triode

8BN8

Compactron combining twin diodes and high-mu twin triodes for television burst, audio, oscillator, detector, discriminator, and horizontal-AFC functions.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
9ER
Socket code
-
Base pins
9
Nominal heater
8.4 V / 450 mA

Description

Twin-diode, high-mu twin-triode tube for television burst/audio/oscillator, detector, discriminator, and horizontal-AFC service.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9ER
Socket code
-
Base pins
9
Nominal heater voltage
8.4 V
Nominal heater current
450 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9ER - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1Base PinCP — Plate (Anode)

Original chart label: 3P; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN2Base PinCK — Cathode

Original chart label: 3K; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN3Base PinBK — Cathode

Original chart label: 2K; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN4Base Pin—H — Heater

Original chart label: H; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN5Base Pin—H — Heater

Original chart label: H; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN6Base PinBP — Plate (Anode)

Original chart label: 2P; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN7Base PinAP — Plate (Anode)

Original chart label: 1P; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN8Base PinAG1 — Control Grid

Original chart label: 1G1; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

PIN9Base PinAK — Cathode

Original chart label: 1K; manufacturer verification pending

Unverified

EIA Base Connections, printed page 132, 9ER

Section ratings

2 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
28000 Ω
Transconductance
0.0026 S
Amplification factor
70
Max plate voltage
330 V
Max plate dissipation
1.7 W

Promoted from published ratings/characteristics where directly applicable; additional published values retained in TUBE_SECTION_PARAMETER.

Section 2

Diode

X-ray radiationInterelectrode capacitances
Rectifier peak forward current
54 A

Promoted from published ratings/characteristics where directly applicable; additional published values retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Heater Voltage (ac/dc) 6.3

    8.4 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Heater Current 0.6

    450 mA

    Published in approved 8BN8 target datasheet entry; Section1

  • Heater Warm-up Time (Average) 11

    11 seconds

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Voltage

    330 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid Voltage —1

    -3 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Resistance (Approx.) 21000

    28000 Ω

    Published in approved 8BN8 target datasheet entry; Section1

  • 3600

    2600 µS

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Current 1.6

    1.6 mA

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid Voltage (Approx.) for plate current of 10 /iA —2.6

    -5.5 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Peak

    54 mA

    Published in approved 8BN8 target datasheet entry; Section1

  • Heater Voltage

    6.3 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Heater Current

    800 mA

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    330 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid-No.l (Control-Grid) Voltage, Positive-bias value

    0 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Dissipation

    3.1 W

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Voltage

    125 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid-No.2 Voltage

    125 V

    Published in approved 8BN8 target datasheet entry; Section1

  • Cathode-Bias Resistor

    56 Ω

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    0.2 MΩ

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid-No.l-Circuit Resistance, for cathode-bias operation

    0.25 MΩ

    Published in approved 8BN8 target datasheet entry; Section1

Capacitance

  • Triode Grid to Triode Plate

    2.6 pF

    Published in approved 8BN8 target datasheet entry; Section1

  • Triode Grid to Cathode and Heater

    3.6 pF

    Published in approved 8BN8 target datasheet entry; Section1

  • Triode Plate to Cathode and Heater

    0.26 pF

    Published in approved 8BN8 target datasheet entry; Section1

  • Diode Cathode to All Other Electrodes (Each Diode Unit)

    5 pF

    Published in approved 8BN8 target datasheet entry; Section1

  • Diode Plate to Diode Cathode and Heater (Each Diode Unit)

    1.9 pF

    Published in approved 8BN8 target datasheet entry; Section1

  • Diode Cathode to Diode Plate and Heater (Each Diode Unit)

    4.8 pF

    Published in approved 8BN8 target datasheet entry; Section1

  • Diode Plate to All Other Electrodes (Each Diode Unit)

    3 pF

    Published in approved 8BN8 target datasheet entry; Section1

Characteristic

  • Transconductance

    13000 µS

    Published in approved 8BN8 target datasheet entry; Section1

  • Plate Current

    11 mA

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid-No.2 Current

    3.8 mA

    Published in approved 8BN8 target datasheet entry; Section1

  • Grid-No.l Voltage (Approx.) for plate current of 20 /iA

    3 V

    Published in approved 8BN8 target datasheet entry; Section1

SECTION 2

Diode

Other

  • Heater Voltage (ac/dc) 6.3

    8.4 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Heater Current 0.6

    450 mA

    Published in approved 8BN8 target datasheet entry; Section2

  • Heater Warm-up Time (Average) 11

    11 seconds

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Voltage

    330 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid Voltage —1

    -3 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Resistance (Approx.) 21000

    28000 Ω

    Published in approved 8BN8 target datasheet entry; Section2

  • 3600

    2600 µS

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Current 1.6

    1.6 mA

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid Voltage (Approx.) for plate current of 10 /iA —2.6

    -5.5 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Peak

    54 mA

    Published in approved 8BN8 target datasheet entry; Section2

  • Heater Voltage

    6.3 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Heater Current

    800 mA

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid-No.2 (Screen-Grid) Supply Voltage

    330 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid-No.l (Control-Grid) Voltage, Positive-bias value

    0 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Dissipation

    3.1 W

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Voltage

    125 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid-No.2 Voltage

    125 V

    Published in approved 8BN8 target datasheet entry; Section2

  • Cathode-Bias Resistor

    56 Ω

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    0.2 MΩ

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid-No.l-Circuit Resistance, for cathode-bias operation

    0.25 MΩ

    Published in approved 8BN8 target datasheet entry; Section2

Capacitance

  • Triode Grid to Triode Plate

    2.6 pF

    Published in approved 8BN8 target datasheet entry; Section2

  • Triode Grid to Cathode and Heater

    3.6 pF

    Published in approved 8BN8 target datasheet entry; Section2

  • Triode Plate to Cathode and Heater

    0.26 pF

    Published in approved 8BN8 target datasheet entry; Section2

  • Diode Cathode to All Other Electrodes (Each Diode Unit)

    5 pF

    Published in approved 8BN8 target datasheet entry; Section2

  • Diode Plate to Diode Cathode and Heater (Each Diode Unit)

    1.9 pF

    Published in approved 8BN8 target datasheet entry; Section2

  • Diode Cathode to Diode Plate and Heater (Each Diode Unit)

    4.8 pF

    Published in approved 8BN8 target datasheet entry; Section2

  • Diode Plate to All Other Electrodes (Each Diode Unit)

    3 pF

    Published in approved 8BN8 target datasheet entry; Section2

Characteristic

  • Transconductance

    13000 µS

    Published in approved 8BN8 target datasheet entry; Section2

  • Plate Current

    11 mA

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid-No.2 Current

    3.8 mA

    Published in approved 8BN8 target datasheet entry; Section2

  • Grid-No.l Voltage (Approx.) for plate current of 20 /iA

    3 V

    Published in approved 8BN8 target datasheet entry; Section2