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8BM11

Dissimilar dual-pentode television IF amplifier combining a semiremote-cutoff first section with a sharp-cutoff second section for cascaded controlled-gain amplification.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 2
Base: 12FU
Socket code: B12C
Base pins: 12
Nominal heater: 8.4 V / 450 mA

Description

Dissimilar dual-pentode television IF amplifier with a semiremote-cutoff first unit and sharp-cutoff second unit.

Socket description

Duodecar 12-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: 12FU
Socket code: B12C
Base pins: 12
Nominal heater voltage: 8.4 V
Nominal heater current: 450 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

12FU - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 220000 Ω
Transconductance: 0.0088 S
Max plate voltage: 160 V
Max screen voltage: 160 V
Max plate dissipation: 2.2 W
Max screen dissipation: 0.55 W

Semiremote-cutoff Section 1.

Section 2

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 300000 Ω
Transconductance: 0.0085 S
Max plate voltage: 160 V
Max screen voltage: 160 V
Max plate dissipation: 2.2 W
Max screen dissipation: 0.55 W

Sharp-cutoff Section 2.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Heater Characteristics and Ratings (1gl to 2p) maximum
0.001 pF
GENERAL
Heater Voltage AC or DC
8.4 V
GENERAL
Heater Warm-up Time average 11 Seconds (2gl to 1p) maximum
0.1 pF
GENERAL
Grid-Number 1 to Plate (lgl to 1lp) 0 016 pf (1gl to 2gl) maximum 0
1 pF
Direct Interelectrode Capacitances Grid-Number 1 (Sectlon l)
Output lp to (h + 1k + 1g2 + maximum
0.002 pF
Direct Interelectrode Capacitances Grid-Number 1 (Sectlon l)
Grid-Number 1 to Plate (2gl to 2p)
0.015 pF
MECHANICAL
2 g3 + 1g3 + i 8 )
2.6 pF
MECHANICAL
Plate Voltage + + o
160 V
MAXIMUM RATINGS
Screen Voltage e e e e e e e
160 V
MAXIMUM RATINGS
Screen Dissipation 0
55 W
MAXIMUM RATINGS
Total DC and Peak e+
200 V
MAXIMUM RATINGS
Total DC and Peak
200 V
MAXIMUM RATINGS
Plate Voltage + o o o
160 V
MAXIMUM RATINGS
Suppressor Voltage + + + e e e
0 V
MAXIMUM RATINGS
Screen Voltage e e e e e
160 V
MAXIMUM RATINGS
Positive DC Grid- Number 1 Voltage e e e e e e e e e e e e e
0 V
MAXIMUM RATINGS
Plate Dissipation e e e e e e e e e
202 W
MAXIMUM RATINGS
Screen Dissipation o e e e e e e e
0.55 W
MAXIMUM RATINGS
DC Component + + +
100 V
MAXIMUM RATINGS
With Cathode Bias
0.25 MOhm
MAXIMUM RATINGS
Plate Voltage + + o + o e 4 4 4 e e e
125 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Cathode-Bias Resistor + + + + 4
120 Ohm
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Plate Resistance approximate + +
300000 Ohm
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Transconductance + o o e e e s s e s e e s e e
8500 uS
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Plate Current + o o o o s s e e e e w4 e e e 4 e
9 mA
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Screen Current + o+ s e e 4 e e e s 4 e e e e e
2.5 mA
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Ib 20 Microamperes + + e e e e e e e e
-5.5 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Heater voltage for a bogey tube at If
450 mA
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
The time required for the voltage across the heater to reach
80 %
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
24 Ip 8 Ecl 0 VOLTSI E p
125 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
L 12 el e
0 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Ee3
0 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
Ec3
0 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
/b Ecy
0 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
24 Ecz
125 V
CHARACTERISTICS AND TYPICAL OPERATION (Cont d)
PlateVoltageTypical
125 V
Section1
ScreenVoltageTypical
125 V
Section1

Characteristic

Plate Voltage e e e e e e e
125 V
AVERAGE CHARACTERISTICS
Screen Voltage e e e e s e e e e e s
125 V
AVERAGE CHARACTERISTICS
Plate Resistance approximate e v e e e e
220000 Ohm
AVERAGE CHARACTERISTICS
Transconductance + + + o e e e e e e
8800 uS
AVERAGE CHARACTERISTICS
Gm 50 Micromhos
-16.5 V
AVERAGE CHARACTERISTICS
PlateCurrentTypical
14 mA
Section1
ScreenCurrentTypical
3.6 mA
Section1

SECTION 2

Pentode

Other

PlateVoltageTypical
125 V
Section2
ScreenVoltageTypical
125 V
Section2

Characteristic

PlateCurrentTypical
9 mA
Section2
ScreenCurrentTypical
2.5 mA
Section2

Data set 02

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Plate Voltage 160
160 V
Published in approved 8BM11 target datasheet entry; Section1
Grid-No.3 (Suppressor-Grid) Voltage 0
0 V
Published in approved 8BM11 target datasheet entry; Section1
Grid-No.2 (Screen-Grid) Voltage 100
160 V
Published in approved 8BM11 target datasheet entry; Section1
Grid-No. 1 (Control-Grid) Voltage, Positive-bias value 0
0 V
Published in approved 8BM11 target datasheet entry; Section1
Plate Dissipation 2.2
2.2 W
Published in approved 8BM11 target datasheet entry; Section1
Grid-No.2 Input 0.55
0.55 W
Published in approved 8BM11 target datasheet entry; Section1
Plate Supply Voltage 125
125 V
Published in approved 8BM11 target datasheet entry; Section1
Grid-No.2 Voltage 125
125 V
Published in approved 8BM11 target datasheet entry; Section1
Cathode-Bias Resistor 56
120 Ω
Published in approved 8BM11 target datasheet entry; Section1
Plate Resistance (Approx.) 220000
300000 Ω
Published in approved 8BM11 target datasheet entry; Section1
operation 1
0.25 MΩ
Published in approved 8BM11 target datasheet entry; Section1

Characteristic

Transconductance 8800
8500 µS
Published in approved 8BM11 target datasheet entry; Section1
Plate Current l'l
9 mA
Published in approved 8BM11 target datasheet entry; Section1
Grid-No.2 Current 3.6
2.5 mA
Published in approved 8BM11 target datasheet entry; Section1
20 tiA
-5.5 V
Published in approved 8BM11 target datasheet entry; Section1
50 jumho
-16.5 V
Published in approved 8BM11 target datasheet entry; Section1

SECTION 2

Pentode

Other

Plate Voltage 160
160 V
Published in approved 8BM11 target datasheet entry; Section2
Grid-No.3 (Suppressor-Grid) Voltage 0
0 V
Published in approved 8BM11 target datasheet entry; Section2
Grid-No.2 (Screen-Grid) Voltage 100
160 V
Published in approved 8BM11 target datasheet entry; Section2
Grid-No. 1 (Control-Grid) Voltage, Positive-bias value 0
0 V
Published in approved 8BM11 target datasheet entry; Section2
Plate Dissipation 2.2
2.2 W
Published in approved 8BM11 target datasheet entry; Section2
Grid-No.2 Input 0.55
0.55 W
Published in approved 8BM11 target datasheet entry; Section2
Plate Supply Voltage 125
125 V
Published in approved 8BM11 target datasheet entry; Section2
Grid-No.2 Voltage 125
125 V
Published in approved 8BM11 target datasheet entry; Section2
Cathode-Bias Resistor 56
120 Ω
Published in approved 8BM11 target datasheet entry; Section2
Plate Resistance (Approx.) 220000
300000 Ω
Published in approved 8BM11 target datasheet entry; Section2
operation 1
0.25 MΩ
Published in approved 8BM11 target datasheet entry; Section2

Characteristic

Transconductance 8800
8500 µS
Published in approved 8BM11 target datasheet entry; Section2
Plate Current l'l
9 mA
Published in approved 8BM11 target datasheet entry; Section2
Grid-No.2 Current 3.6
2.5 mA
Published in approved 8BM11 target datasheet entry; Section2
20 tiA
-5.5 V
Published in approved 8BM11 target datasheet entry; Section2
50 jumho
-16.5 V
Published in approved 8BM11 target datasheet entry; Section2