8530

Toshiba rugged sharp-cutoff micro-metal RF pentode. Its compact metal construction combines fixed-gain high-frequency amplification with enhanced mechanical durability for demanding electronic equipment.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: SUBMINIATURE8
Base pins: 8
Nominal heater: 6.3 V / 150 mA

Description

The Toshiba 8530 is a rugged sharp-cutoff micro-metal RF pentode.

Socket description

Subminiature 8-lead base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: SUBMINIATURE8
Base pins: 8
Nominal heater voltage: 6.3 V
Nominal heater current: 150 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 260000 Ω
Transconductance: 0.005 S
Max plate voltage: 165 V
Max screen voltage: 155 V
Max plate dissipation: 1.1 W

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1964 RMA EIA

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

Heater Voltage
6.3 V
Heater Current
150 mA
Plate-Grid Capacitance
0.015 pF
Maximum
Input Capacitance
4.2 pF
Output Capacitance
3.4 pF
Plate Voltage
100 V
ClassA
Screen Voltage
100 V
ClassA
Transconductance
5000 uS
ClassA
Plate Resistance
260000 ohm
ClassA
Maximum Intended Frequency
400 MHz

Other

Maximum Plate Voltage
165 V
Maximum Screen Voltage
155 V