8348

High-power transmitting tetrode designed for RF power amplification, linear amplification, oscillation, modulation, or frequency multiplication.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 2
Base: -
Socket code: -
Base pins: 9
Nominal heater: 16 V / 2.05 A

Description

The Telefunken 8348 is a quick-heating, internally neutralized twin tetrode for RF power amplification and frequency multiplication in mobile or fixed equipment.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: -
Base pins: 9
Nominal heater voltage: 16 V
Nominal heater current: 2.05 A
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Tetrode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0033 S
Amplification factor: 7.5
Max plate voltage: 300 V
Max screen voltage: 200 V
Max plate dissipation: 7 W
Max screen dissipation: 1 W
Max cathode current: 65 mA

Representative row for two electrically identical tetrode sections.

Section 2

Tetrode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0033 S
Amplification factor: 7.5
Max plate voltage: 300 V
Max screen voltage: 200 V
Max plate dissipation: 7 W
Max screen dissipation: 1 W
Max cathode current: 65 mA

Second identical physical tetrode section; added to align rows with SectionCount.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1959 Telefunken

Published operating points and test conditions from this source.

SECTION 1

Tetrode

Characteristics

Heater Voltage
16 V
Heater Current
2.05 A
Heater Warmup Time
0.5 s
Maximum
Maximum Intended Frequency
200 MHz
Transconductance
33000 uS
Each section