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8233

Double-frame-grid power pentode for video, pulse, and deflection amplification in radar, television, microwave, and measurement equipment.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: B9D
Base pins: 9
Nominal heater: 6.3 V / 600 mA

Description

Double-frame-grid power pentode for video, pulse, or deflection amplifier service in microwave, radar, television, and measuring equipment.

Socket description

Magnoval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: B9D
Base pins: 9
Nominal heater voltage: 6.3 V
Nominal heater current: 600 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 20000 Ω
Transconductance: 0.045 S
Amplification factor: 30
Max plate dissipation: 10 W

Promoted only where the locked section schema has a direct semantic match; remaining RF, audio-output, thyratron, rectifier, capacitance, and pulse values are retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Amperex Condensed

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Plate voltage
140 V
VideoPulseDeflectionAmplifier
Plate current
50 mA
VideoPulseDeflectionAmplifier
Control-grid voltage
-1.5 V
VideoPulseDeflectionAmplifier
Screen voltage
140 V
VideoPulseDeflectionAmplifier
Screen current
5.5 mA
VideoPulseDeflectionAmplifier
Plate dissipation
10 W
Section1

Characteristic

Plate resistance
20000 Ω
Section1
Transconductance
45000 µS
Section1
Amplification factor
30
Section1