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Voltage Pentode - Sharp Cutoff (single) ·Pentode

8136

Sharp-cutoff pentode designed for RF, IF, wide-band, or high-frequency voltage-amplifier service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
B7G
Base pins
7
Nominal heater
6.3 V / 300 mA

Description

Miniature sharp-cutoff pentode primarily for wide-band intermediate-frequency amplifier service in industrial applications, with controls intended to improve long-life performance.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B7G
Base pins
7
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Max plate dissipation
4 W

Promoted fields mapped by printed headings; additional data retained in parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater Voltage, AC or DC* . . . 6.3x

    0.6 V

    Published datasheet line; semantic text-layer recovery

  • Heater Current}

    300 mA

    Published datasheet line; semantic text-layer recovery

  • Heater Current}

    1 in

    Published datasheet line; semantic text-layer recovery

  • Grid-Number 1 to Plate: (gl to p)

    0.02 pF

    Published datasheet line; semantic text-layer recovery

  • Grid-Number 1 to Plate: (gl to p)

    1 in

    Published datasheet line; semantic text-layer recovery

  • i.s.)

    7 pF

    Published datasheet line; semantic text-layer recovery

  • i.s.)

    2.2 pF

    Published datasheet line; semantic text-layer recovery

  • Plate Voltage . . . ., . e e e e e e e e e e e« e e e e

    330 V

    Published datasheet line; semantic text-layer recovery

  • Screen Voltage. . . . . + + « « + 4 4 e 4 4 e 4 e 4 4 e 4 4 W+

    15 V

    Published datasheet line; semantic text-layer recovery

  • Plate Dissipation. . . . + & ¢ ¢ v e e 4w e e e e e e e e e e

    2.2 W

    Published datasheet line; semantic text-layer recovery

  • Screen Dissipation . . . . . . . ¢ o 0 v e e e e e e e e e e O

    65 W

    Published datasheet line; semantic text-layer recovery

  • DC Component . T X [

    0 V

    Published datasheet line; semantic text-layer recovery

  • Total DC and Peak e e e e e e e e e e e e e e e e e ..oL

    200 V

    Published datasheet line; semantic text-layer recovery

  • Total DC and Peak. . .« « + + v & « « + 4 e « 4 e = e« « 4 .«

    300 V

    Published datasheet line; semantic text-layer recovery

  • Screen Voltage. . . « v ¢ + & « 4 4 e e e e e e 4 e e e e e oeo

    125 V

    Published datasheet line; semantic text-layer recovery

  • Cathode-Bias Resistor . . . « « + & « + o o o « o & & + &« 4+ « +

    56 Ohm

    Published datasheet line; semantic text-layer recovery

  • Plate Current . . . « + + 4. 4 4 s e e e e e e e e e e e e

    10.8 mA

    Published datasheet line; semantic text-layer recovery

  • Screen CUITENt. . + « « o+ 4 4 s e e e e e e s e e e e e e e

    29 mA

    Published datasheet line; semantic text-layer recovery

  • Ib = 20 Microamperes. . . + + « « « 4 4+ 4 e e 4 e e e e 4« s+ & .=

    6.5 V

    Published datasheet line; semantic text-layer recovery

  • 500 Hour Life-Test End Point, maximumff. . . . . . . . . .+

    5 Ohm

    Published datasheet line; semantic text-layer recovery

  • Heater current of a bogey tube at Ef =

    6.3 V

    Published datasheet line; semantic text-layer recovery

  • following conditions: Ef =

    6.6 V

    Published datasheet line; semantic text-layer recovery

  • following conditions: Ef =

    150 V

    Published datasheet line; semantic text-layer recovery

  • following conditions: Ef =

    150 V

    Published datasheet line; semantic text-layer recovery

  • following conditions: Ef =

    0 V

    Published datasheet line; semantic text-layer recovery

  • following conditions: Ef =

    55 Ohm

    Published datasheet line; semantic text-layer recovery

  • Rgl =

    250000 Ohm

    Published datasheet line; semantic text-layer recovery

  • Rgl =

    -180 V

    Published datasheet line; semantic text-layer recovery

  • =

    5.7 V

    Published datasheet line; semantic text-layer recovery

  • =

    80 V

    Published datasheet line; semantic text-layer recovery

  • =

    2.5 mA

    Published datasheet line; semantic text-layer recovery

  • 24 Ec3 =

    0 V

    Published datasheet line; semantic text-layer recovery

  • Ec2 =

    125 V

    Published datasheet line; semantic text-layer recovery

  • 20 Ib @ Ecy =

    0 V

    Published datasheet line; semantic text-layer recovery

  • A T = lg2 @ Eci =

    0 V

    Published datasheet line; semantic text-layer recovery

  • Ep =

    125 V

    Published datasheet line; semantic text-layer recovery

  • < =

    0 V

    Published datasheet line; semantic text-layer recovery

  • Ep =

    125 V

    Published datasheet line; semantic text-layer recovery

  • [~| Ec3 =

    0 V

    Published datasheet line; semantic text-layer recovery

  • Ep =

    125 V

    Published datasheet line; semantic text-layer recovery

  • | Ec3 =

    0 V

    Published datasheet line; semantic text-layer recovery

Capacitance

  • Direct Interelectrode Capacitances§ Maximum Over-all Length . . 2.125

    1 in

    Published datasheet line; semantic text-layer recovery

Characteristic

  • Transconductance . . <« + + + s+ o+ e e« 4 e e e e e e e

    9800 uS

    Published datasheet line; semantic text-layer recovery