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Power - Beam (NOT sweep) ·BeamPower

8068

Beam pentode developed specifically as a series regulator for high-voltage power supplies, combining a 3.5 kV plate rating with useful transconductance for stabilized supply control.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
B5
Base pins
8
Nominal heater
6.3 V / 900 mA

Description

The 8068 is a beam pentode developed specifically as a series regulator in high-voltage power supplies, combining a 3.5 kV plate rating with useful transconductance.

Socket description

European 5-pin base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B5
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
900 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Beam Power

X-ray radiationInterelectrode capacitances
Plate resistance
54500 Ω
Transconductance
0.0052 S
Max plate voltage
3500 V
Max screen voltage
250 V
Max plate dissipation
35 W
Max screen dissipation
1 W
Max cathode current
100 mA
Rectifier max heater-cathode voltage
200 V

Promoted fields mapped by printed headings; additional data retained in parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

  • Plate Voltage

    600 V

    SeriesRegulator

Characteristic

  • Plate Resistance

    54500 ohm

    Typical

  • Transconductance

    5200 uS

    Typical

Data set 02

1966 Tung Sol Electronic Tubes 4 of 4

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Characteristic

  • Grid-to-plate capacitance

    0.6 pF

    WholeTube

  • Input capacitance

    10 pF

    WholeTube

  • Output capacitance

    5.5 pF

    WholeTube

  • Grid To Plate

    0.6 pf

    PublishedTable

  • Limits Of Applied Voltage - Ac Or Dc

    0.6 VOLTS

    PublishedTable

  • Plate Voltage

    3500 VOLTS

    PublishedTable

  • Grid 2 Voltage

    2 VOLTS

    PublishedTable

  • Plate Dissipation

    35 WATTS

    PublishedTable

  • Grid 2 Dissipation

    1 WATTS

    PublishedTable

  • Dc Cathode Current

    100 MA

    PublishedTable

  • Grid 1 Circuit Resistance

    0.1 MEGOHMS

    PublishedTable

  • Plate Voltage

    600 VOLTS

    PublishedTable

  • Grid 2 Voltage

    125 VOLTS

    PublishedTable

  • Grid 1 Voltage

    -7.5 VOLTS

    PublishedTable

  • Plate Current

    36 MA

    PublishedTable

  • Grid 2 Current

    1 MA

    PublishedTable

Other

  • Plate voltage

    600 V

    WholeTube

  • Grid 2 voltage

    125 V

    WholeTube

  • Grid 1 voltage

    -7.5 V

    WholeTube

  • Plate current

    36 mA

    WholeTube

  • Grid 2 current

    1 mA

    WholeTube

  • Maximum Heater-Cathode Voltage

    200 VOLTS

    PublishedTable

Data set 03

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

  • Heater Voltage, AC or DC*. . . . .. 6.3=

    0.6 V

    Published datasheet line; semantic text-layer recovery

  • Heater Currentt

    900 mA

    Published datasheet line; semantic text-layer recovery

  • Grid to Plate: (g top)

    0.6 pF

    Published datasheet line; semantic text-layer recovery

  • Input:gto(h + k + g2 + b.p.)

    10 pF

    Published datasheet line; semantic text-layer recovery

  • Output: pto (h + k + g2 + b.p.)

    5.5 pF

    Published datasheet line; semantic text-layer recovery

  • Output: pto (h + k + g2 + b.p.)

    42 in

    Published datasheet line; semantic text-layer recovery

  • Minimum Seated Height

    34 in

    Published datasheet line; semantic text-layer recovery

  • Plate Voltage

    3500 V

    Published datasheet line; semantic text-layer recovery

  • Screen Voltage

    250 V

    Published datasheet line; semantic text-layer recovery

  • Screen Voltage

    200 V

    Published datasheet line; semantic text-layer recovery

  • Plate Dissipation

    35 W

    Published datasheet line; semantic text-layer recovery

  • Screen Dissipation

    1 W

    Published datasheet line; semantic text-layer recovery

  • Screen Dissipation

    200 V

    Published datasheet line; semantic text-layer recovery

  • 3500

    600 V

    Published datasheet line; semantic text-layer recovery

  • 3500

    1 mA

    Published datasheet line; semantic text-layer recovery

  • Screen Voltage. . .. ........ 100

    125 V

    Published datasheet line; semantic text-layer recovery

  • Grid-Number 1 Voltage . . . . . -30 —

    7.5 V

    Published datasheet line; semantic text-layer recovery

  • Plate Resistance, approximate

    54500 Ohm

    Published datasheet line; semantic text-layer recovery

  • Transconductance

    5200 uS

    Published datasheet line; semantic text-layer recovery

  • Transconductance

    6.3 V

    Published datasheet line; semantic text-layer recovery

  • Plate Current. . ... ... ........10

    36 mA

    Published datasheet line; semantic text-layer recovery

  • i Ecp =

    125 V

    Published datasheet line; semantic text-layer recovery

  • Eco =

    250 V

    Published datasheet line; semantic text-layer recovery

  • & 7 el ~

    0 V

    Published datasheet line; semantic text-layer recovery

  • Ep =

    600 V

    Published datasheet line; semantic text-layer recovery

  • E, =

    600 V

    Published datasheet line; semantic text-layer recovery

  • £; =

    6.3 V

    Published datasheet line; semantic text-layer recovery

  • R

    35 W

    Published datasheet line; semantic text-layer recovery

Characteristic

  • DC Cathode Current

    100 mA

    Published datasheet line; semantic text-layer recovery