6SS7

Remote-cutoff RF pentode designed for AVC-controlled RF and IF amplifier service. Its gradual cutoff characteristic permits receiver gain to be reduced smoothly as incoming signal strength increases.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: 8N
Socket code: IO
Base pins: 8
Nominal heater: 6.3 V / 150 mA

Description

Remote-cutoff RF pentode for AVC-controlled RF and IF amplifier service.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: 8N
Socket code: IO
Base pins: 8
Nominal heater voltage: 6.3 V
Nominal heater current: 150 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

8N - Terminal pinout

Electrical assignments shared by every tube using this base designation.

Terminal	Section	Connection	Evidence
PIN1SH	A	SH — Internal Shield EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN2H	—	H — Heater EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN3G3	A	G3 — Suppressor Grid EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN4G1	A	G1 — Control Grid EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN5K	A	K — Cathode EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN6G2	A	G2 — Screen Grid EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN7H	—	H — Heater EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N
PIN8P	A	P — Plate (Anode) EIA transcription; independent manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8N

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 120000 Ω
Transconductance: 0.00193 S
Max plate voltage: 300 V
Max screen voltage: 100 V
Max plate dissipation: 2.25 W
Max screen dissipation: 0.35 W

Published promoted fields populated from printed headings; identical repeated sections compressed.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Input capacitance
5.5 pF
Output capacitance
7 pF
Grid-plate capacitance
0.004 pF

Other

Plate voltage
250 V
ClassA
Screen voltage
100 V
ClassA
Grid voltage
-3 V
ClassA
Plate current
9 mA
ClassA
Screen current
2 mA
ClassA

Characteristics

Plate resistance
1000000 ohm
ClassA
Transconductance
1850 uS
ClassA

Data set 02

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Plate Resistance
1000000 ohm
AlternateOperatingPoint
Transconductance
2200 uS
AlternateOperatingPoint

Data set 03

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Grid-to-plate capacitance
0.004 pF
ExternalShield
Input capacitance
5 pF
ExternalShield
Output capacitance
6 pF
ExternalShield

Characteristic

Plate voltage
100 V
Typical
Screen voltage
100 V
Typical
Control-grid voltage
-1 V
Typical
Plate current
12.2 mA
Typical
Screen current
3.1 mA
Typical
Transconductance
2200 uS
Typical
Plate resistance
120000 ohm
Typical
Grid voltage for transconductance 10 uS
-15 V