Data set 01
1968 General Electric Co
Published operating points and test conditions from this source.
SECTION 1
Pentode
Capacitance
Input Capacitance
55 pF
Output Capacitance
3.4 pF
Input Capacitance
3.2 pF
Power - Pentode (NOT beam) ·Pentode-Triode
6JW8
Combination medium-mu triode and sharp-cutoff pentode designed as a television horizontal oscillator and frequency-control tube.
Directly heatedCold cathodeCommon cathodeDissimilar
- Sections
- 2
- Base
- E9-1
- Socket code
- B9A
- Base pins
- 9
- Nominal heater
- 6.3 V / 430 mA
Description
Medium-mu triode plus sharp-cutoff pentode used as a horizontal oscillator and frequency-control tube in television receivers.
Socket description
Small-button Noval 9-contact
General specifications
Tube and section characteristics
Properties common to every published source and operating point.
Heater and base
- Base
- E9-1
- Socket code
- B9A
- Base pins
- 9
- Nominal heater voltage
- 6.3 V
- Nominal heater current
- 430 mA
- Parallel heater voltage
- -
- Parallel heater current
- -
- Series capable
- No
E9-1 - Terminal pinout
Electrical assignments shared by every tube using this base designation.
No verified pinout is recorded for this base designation.
Section ratings
2 physical sections, each with unique specifications.
Section 1
Pentode
X-ray radiationInterelectrode capacitances
- Plate resistance
- 400000 Ω
- Transconductance
- 0.0055 S
- Max plate voltage
- 250 V
- Max screen voltage
- 250 V
- Max plate dissipation
- 1.2 W
- Max screen dissipation
- 0.2 W
- Max cathode current
- 15 mA
Promoted from published ratings/characteristics where directly applicable; additional published values retained in TUBE_SECTION_PARAMETER.
Section 2
Triode
X-ray radiationInterelectrode capacitances
- Plate resistance
- 20000 Ω
- Transconductance
- 0.0035 S
- Amplification factor
- 70
- Max plate voltage
- 250 V
- Max plate dissipation
- 1.4 W
- Max cathode current
- 10 mA
Promoted from published ratings/characteristics where directly applicable; additional published values retained in TUBE_SECTION_PARAMETER.
Source-dependent data
Operating conditions by source
Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.
Data set 02
1975 RCA RC30
Published operating points and test conditions from this source.
SECTION 1
Pentode
Other
Heater Voltage (ac/dc) 4.7 6.3 6
9 V
Published in approved ECF802 target datasheet entry; Section2
Heater Current 0.6 0.43 0.45
300 mA
Published in approved ECF802 target datasheet entry; Section2
Plate Supply Voltage 550
650 V
Published in approved ECF802 target datasheet entry; Section2
Plate Voltage 260
250 V
Published in approved ECF802 target datasheet entry; Section2
Grid-No.Z Voltage
250 V
Published in approved ECF802 target datasheet entry; Section2
Peak Cathode Current*
60 mA
Published in approved ECF802 target datasheet entry; Section2
Cathode Current 10
15 mA
Published in approved ECF802 target datasheet entry; Section2
Plate Dissipation 1.4
1.2 W
Published in approved ECF802 target datasheet entry; Section2
Grid-No.2 Input
0.8 W
Published in approved ECF802 target datasheet entry; Section2
Input Impedance at 60 Hz 50
300 kΩ
Published in approved ECF802 target datasheet entry; Section2
Plate Voltage 200
100 V
Published in approved ECF802 target datasheet entry; Section2
For grid current of 10 /tA
10 mA
Published in approved ECF802 target datasheet entry; Section2
Grid-No.2 Current for grid-No.l voltage of
0 V
Published in approved ECF802 target datasheet entry; Section2
—
3.5 mA
Published in approved ECF802 target datasheet entry; Section2
For grid-No.l current of +0.3 iiK —1.3
-1.3 V
Published in approved ECF802 target datasheet entry; Section2
For plate and grid-No.2 voltage of
200 V
Published in approved ECF802 target datasheet entry; Section2
and plate current of 10 /lA —
-16 V
Published in approved ECF802 target datasheet entry; Section2
For fixed-bias operation
0.56 MΩ
Published in approved ECF802 target datasheet entry; Section2
For cathode-bias operation 3
1 MΩ
Published in approved ECF802 target datasheet entry; Section2
• With a maximum duty factor of 0.30 and maximum pulse duration of
30 microseconds
Published in approved ECF802 target datasheet entry; Section2
Heater Voltage (ac/dc) 6.3 12.7 16.8 24.2
25.2 V
Published in approved ECF802 target datasheet entry; Section2
Heater Current 1.2 0.6 0.45 0.315
300 mA
Published in approved ECF802 target datasheet entry; Section2
Heater Warm-up Time . 11 11
11 seconds
Published in approved ECF802 target datasheet entry; Section2
Plate Voltage 150 45
120 V
Published in approved ECF802 target datasheet entry; Section2
Grid-No.2 (Screen-Grid) Voltage 110
110 V
Published in approved ECF802 target datasheet entry; Section2
Grid-No.l (Control-Grid) Voltage —6 0
-8 V
Published in approved ECF802 target datasheet entry; Section2
Plate Resistance (Approx.) 8500
11700 Ω
Published in approved ECF802 target datasheet entry; Section2
Transconductance 2350
7100 µS
Published in approved ECF802 target datasheet entry; Section2
Plate Current 5.5 122
46 mA
Published in approved ECF802 target datasheet entry; Section2
16.5"
3.5 mA
Published in approved ECF802 target datasheet entry; Section2
of 10 hK
-10 V
Published in approved ECF802 target datasheet entry; Section2
Characteristic
Grid-No.l (Control-Grid) Voltage —2
1 V
Published in approved ECF802 target datasheet entry; Section2
Input Resistance 0.2
0.4 MΩ
Published in approved ECF802 target datasheet entry; Section2
Transconductance 3500
5600 µS
Published in approved ECF802 target datasheet entry; Section2
Plate Current 3.5
6 mA
Published in approved ECF802 target datasheet entry; Section2
Grid-No.2 Current
1.7 mA
Published in approved ECF802 target datasheet entry; Section2
For grid-No.l voltage of
0 V
Published in approved ECF802 target datasheet entry; Section2
SECTION 2
Triode
Other
Heater Voltage (ac/dc) 4.7 6.3 6
9 V
Published in approved ECF802 target datasheet entry; Section1
Heater Current 0.6 0.43 0.45
300 mA
Published in approved ECF802 target datasheet entry; Section1
Plate Supply Voltage 550
650 V
Published in approved ECF802 target datasheet entry; Section1
Plate Voltage 260
250 V
Published in approved ECF802 target datasheet entry; Section1
Grid-No.Z Voltage
250 V
Published in approved ECF802 target datasheet entry; Section1
Peak Cathode Current*
60 mA
Published in approved ECF802 target datasheet entry; Section1
Cathode Current 10
15 mA
Published in approved ECF802 target datasheet entry; Section1
Plate Dissipation 1.4
1.2 W
Published in approved ECF802 target datasheet entry; Section1
Grid-No.2 Input
0.8 W
Published in approved ECF802 target datasheet entry; Section1
Input Impedance at 60 Hz 50
300 kΩ
Published in approved ECF802 target datasheet entry; Section1
Plate Voltage 200
100 V
Published in approved ECF802 target datasheet entry; Section1
For grid current of 10 /tA
10 mA
Published in approved ECF802 target datasheet entry; Section1
Grid-No.2 Current for grid-No.l voltage of
0 V
Published in approved ECF802 target datasheet entry; Section1
—
3.5 mA
Published in approved ECF802 target datasheet entry; Section1
For grid-No.l current of +0.3 iiK —1.3
-1.3 V
Published in approved ECF802 target datasheet entry; Section1
For plate and grid-No.2 voltage of
200 V
Published in approved ECF802 target datasheet entry; Section1
and plate current of 10 /lA —
-16 V
Published in approved ECF802 target datasheet entry; Section1
For fixed-bias operation
0.56 MΩ
Published in approved ECF802 target datasheet entry; Section1
For cathode-bias operation 3
1 MΩ
Published in approved ECF802 target datasheet entry; Section1
• With a maximum duty factor of 0.30 and maximum pulse duration of
30 microseconds
Published in approved ECF802 target datasheet entry; Section1
Heater Voltage (ac/dc) 6.3 12.7 16.8 24.2
25.2 V
Published in approved ECF802 target datasheet entry; Section1
Heater Current 1.2 0.6 0.45 0.315
300 mA
Published in approved ECF802 target datasheet entry; Section1
Heater Warm-up Time . 11 11
11 seconds
Published in approved ECF802 target datasheet entry; Section1
Plate Voltage 150 45
120 V
Published in approved ECF802 target datasheet entry; Section1
Grid-No.2 (Screen-Grid) Voltage 110
110 V
Published in approved ECF802 target datasheet entry; Section1
Grid-No.l (Control-Grid) Voltage —6 0
-8 V
Published in approved ECF802 target datasheet entry; Section1
Plate Resistance (Approx.) 8500
11700 Ω
Published in approved ECF802 target datasheet entry; Section1
Transconductance 2350
7100 µS
Published in approved ECF802 target datasheet entry; Section1
Plate Current 5.5 122
46 mA
Published in approved ECF802 target datasheet entry; Section1
16.5"
3.5 mA
Published in approved ECF802 target datasheet entry; Section1
of 10 hK
-10 V
Published in approved ECF802 target datasheet entry; Section1
Characteristic
Grid-No.l (Control-Grid) Voltage —2
1 V
Published in approved ECF802 target datasheet entry; Section1
Input Resistance 0.2
0.4 MΩ
Published in approved ECF802 target datasheet entry; Section1
Transconductance 3500
5600 µS
Published in approved ECF802 target datasheet entry; Section1
Plate Current 3.5
6 mA
Published in approved ECF802 target datasheet entry; Section1
Grid-No.2 Current
1.7 mA
Published in approved ECF802 target datasheet entry; Section1
For grid-No.l voltage of
0 V
Published in approved ECF802 target datasheet entry; Section1