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Voltage Pentode - High Frequency (single) ·Pentode

6J50P

Russian high-frequency pentode designed specifically for input stages of wideband amplifiers. Its manufacturer-defined role emphasizes broadband RF signal reception and voltage amplification at the front end of electronic equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
6.3 V / 300 mA

Description

The 6J50P is a Russian high-frequency pentode for input stages of wideband amplifiers. The source entry was translated to English and processed independently from neighboring partial entries.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
90000 Ω
Transconductance
0.035 S
Max plate voltage
200 V
Max screen voltage
160 V
Max plate dissipation
5.3 W
Max screen dissipation
0.9 W
Max cathode current
45 mA

Promoted values translated from the complete filename-designated Russian entry only.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1981 Russian Tubes Katsnelson and Larionov

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Nominal heater voltage

    6.3 V

    Published source value

  • Nominal heater current

    300 mA

    Published source value

  • Guaranteed service life

    1500 h

    Published source value

  • Transconductance

    35000 uS

    Published operating point

  • Plate resistance

    90000 Ohm

    Published operating point