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Power - Beam Single (NOT sweep) (under 10W) ·BeamPower

6FS5

Shadow-grid beam device designed as an RF amplifier in VHF television receivers, optimized for high-frequency front-end gain.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
7GA
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 200 mA

Description

Beam hexode used as an RF amplifier in VHF television receivers.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
7GA
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
200 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

7GA - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1G1AG1 — Control Grid

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN2G2AG2 — Screen GridGroup 7GA2

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN2G4AG4 — Fourth GridGroup 7GA2

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN2KAK — CathodeGroup 7GA2

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN3H—H — Heater

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN4H—H — Heater

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN5PAP — Plate (Anode)

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN6G3AG3 — Suppressor Grid

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN7G2AG2 — Screen GridGroup 7GA7

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN7G4AG4 — Fourth GridGroup 7GA7

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

PIN7KAK — CathodeGroup 7GA7

EIA transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 7GA

Section ratings

1 physical section, each with unique specifications.

Section 1

Beam Power

X-ray radiationInterelectrode capacitances
Plate resistance
240000 Ω
Transconductance
0.01 S
Max plate voltage
300 V
Max screen voltage
150 V
Max plate dissipation
3.25 W
Max screen dissipation
0.15 W
Max cathode current
20 mA

Beam hexode. SectionType Other is used because the locked SectionType vocabulary has no Hexode value.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

  • Typical Plate Voltage

    275 V

  • Typical Screen Voltage

    135 V

Characteristic

  • Typical Plate Current

    9 mA

  • Typical Screen Current

    0.17 mA

Data set 02

1971 RCA HB3 Binder 4 of 7

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

  • Heater voltage nominal

    6.3 V

  • Heater voltage tolerance

    0.6 V

    ±

  • Heater current

    200 mA

    HeaterVoltage=6.3V

  • Peak heater-cathode voltage, heater negative

    200 V

  • Peak heater-cathode voltage, heater positive

    200 V

    DCComponent<=100V

  • Maximum plate voltage

    300 V

    ClassA1

  • Maximum grid No.3 voltage

    150 V

    ClassA1

  • Maximum negative grid No.1 bias magnitude

    50 V

    ClassA1

  • Maximum positive grid No.1 voltage

    0 V

    ClassA1

  • Maximum cathode current

    20 mA

    ClassA1

  • Maximum grid No.3 input

    0.15 W

    ClassA1

  • Maximum plate dissipation

    3.25 W

    ClassA1

  • Maximum grid No.1 circuit resistance

    0.5 MΩ

    ClassA1;FixedBias

Capacitance

  • Grid No.1-to-plate capacitance

    0.03 pF

    WithoutExternalShield

  • Grid No.1-to-plate capacitance

    0.016 pF

    WithExternalShield

  • Grid No.1 input capacitance

    4.8 pF

    WithoutExternalShield

  • Grid No.1 input capacitance

    4.8 pF

    WithExternalShield

  • Plate output capacitance

    2 pF

    WithoutExternalShield

  • Plate output capacitance

    2.8 pF

    WithExternalShield

Characteristics

  • Plate voltage

    275 V

    ClassA1

  • Grid No.3 voltage

    135 V

    ClassA1

  • Grid No.1 voltage

    -0.2 V

    ClassA1

  • Plate resistance

    0.24 MΩ

    ClassA1

  • Transconductance

    10000 µS

    ClassA1

  • Plate current

    9 mA

    ClassA1

  • Grid No.3 current

    0.17 mA

    ClassA1

  • Grid No.1 voltage for transconductance 100 µS

    -5 V

    ClassA1

Data set 03

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Beam Power

Other

  • Heater Voltage (ac/dc) 2.4 2.9

    6.3 V

    Published in approved 6FS5 target entry; Section1

  • Heater Current 0.6 0.45

    200 mA

    Published in approved 6FS5 target entry; Section1

  • Heater Warm-up Time (Average) 11

    11 seconds

    Published in approved 6FS5 target entry; Section1

  • Plate Voltage

    300 V

    Published in approved 6FS5 target entry; Section1

  • Grid-No.3 (Screen-Grid) Voltage

    150 V

    Published in approved 6FS5 target entry; Section1

  • Negative-bias value

    60 V

    Published in approved 6FS5 target entry; Section1

  • Positive-bias value

    0 V

    Published in approved 6FS5 target entry; Section1

  • Cathode Current

    20 mA

    Published in approved 6FS5 target entry; Section1

  • Plate Dissipation

    3.25 W

    Published in approved 6FS5 target entry; Section1

  • Grid-No.3 Input

    0.16 W

    Published in approved 6FS5 target entry; Section1

  • Plate Voltage

    275 V

    Published in approved 6FS5 target entry; Section1

  • Grid-No.3 Voltage

    135 V

    Published in approved 6FS5 target entry; Section1

  • Grid-No.l Voltage

    -0.2 V

    Published in approved 6FS5 target entry; Section1

  • Grid-No.l-Circuit Resistance, for fixed-bias operation

    0.5 MΩ

    Published in approved 6FS5 target entry; Section1

Capacitance

  • Grid No.l to Plate 0.03

    0.016 pF

    Published in approved 6FS5 target entry; Section1

  • No.3, and Grid No.4

    4.8 pF

    Published in approved 6FS5 target entry; Section1

  • and Grid No

    4 pF

    Published in approved 6FS5 target entry; Section1

Characteristic

  • Plate Resistance (Approx. )

    0.24 MΩ

    Published in approved 6FS5 target entry; Section1

  • Transconductance

    10000 µS

    Published in approved 6FS5 target entry; Section1

  • Plate Current

    9 mA

    Published in approved 6FS5 target entry; Section1

  • Grid-No.3 Current

    0.17 mA

    Published in approved 6FS5 target entry; Section1

  • Grid-No.l Voltage (Approx.) for transconductance of

    100 µS

    Published in approved 6FS5 target entry; Section1

  • Grid-No.l Voltage (Approx.) for transconductance of 100 /imhos

    -5 V

    Published in approved 6FS5 target entry; Section1