6F32Z

High-frequency pentode designed for RF or wideband voltage amplification in radio-electronic equipment.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: -
Socket code: B7G
Base pins: 7
Nominal heater: 6.3 V / 170 mA

Description

This special-quality high-frequency pentode (source heading 6Ж1П-E, annotated 6F32Z) is intended for RF and wideband amplification to about 400 MHz. The sheet specifies long life, reliability, vibration and acceleration resistance.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: -
Socket code: B7G
Base pins: 7
Nominal heater voltage: 6.3 V
Nominal heater current: 170 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 300000 Ω
Transconductance: 0.00515 S
Max plate voltage: 200 V
Max screen voltage: 150 V
Max plate dissipation: 1.8 W
Max screen dissipation: 0.55 W
Max cathode current: 20 mA

Electrical section mapped from published characteristics and maximum ratings.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X Tesla

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Plate voltage
120 V
Screen voltage
120 V
Plate current
7.35 mA
Transconductance
5150 uS
Equivalent noise resistance
1.5 kOhm

Capacitance

Input capacitance
4.35 pF

Other

Rated life
5000 h