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Heptode ·Heptode

6CS6

Sharp-cutoff dual-control heptode designed for television gated-amplifier and synchronization service, particularly combined sync separation and clipping.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
7CH
Socket code
B7G
Base pins
7
Nominal heater
6.3 V / 300 mA

Description

Pentagrid gated-amplifier tube used as a combined sync separator and sync clipper in television receivers.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
7CH
Socket code
B7G
Base pins
7
Nominal heater voltage
6.3 V
Nominal heater current
300 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

7CH - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1G1AG1 — Control Grid

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN2G5AG5 — Fifth GridGroup 7CH2

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN2KAK — CathodeGroup 7CH2

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN3H—H — Heater

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN4H—H — Heater

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN5PAP — Plate (Anode)

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN6G2AG2 — Screen GridGroup 7CH6

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN6G4AG4 — Fourth GridGroup 7CH6

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

PIN7G3AG3 — Suppressor Grid

Chart transcription; independent manufacturer verification pending

Unverified

EIA Base Connections, printed page 128, 7CH

Section ratings

1 physical section, each with unique specifications.

Section 1

Heptode

X-ray radiationInterelectrode capacitances
Plate resistance
1000000 Ω
Transconductance
0.0011 S
Max plate voltage
300 V
Max screen voltage
100 V
Max plate dissipation
1 W
Max screen dissipation
1 W
Max cathode current
14 mA

Grid-1 transconductance promoted; grid-3 transconductance retained as parameter.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Plate voltage

    100 V

    GatedAmplifier;ControlGrid3Zero

  • Screen-grid voltage

    30 V

    GatedAmplifier;ControlGrid3Zero

  • Grid voltage

    -1 V

    GatedAmplifier;ControlGrid3Zero

  • Plate current

    1 mA

    GatedAmplifier;ControlGrid3Zero

  • Screen-grid current

    1.3 mA

    GatedAmplifier;ControlGrid3Zero

  • Plate voltage

    100 V

    GatedAmplifier;ControlGrid3Minus1V

  • Screen-grid voltage

    30 V

    GatedAmplifier;ControlGrid3Minus1V

  • Grid voltage

    0 V

    GatedAmplifier;ControlGrid3Minus1V

  • Plate current

    0.8 mA

    GatedAmplifier;ControlGrid3Minus1V

  • Screen-grid current

    5.5 mA

    GatedAmplifier;ControlGrid3Minus1V

  • Plate voltage

    10 V

    GatedAmplifier;LowPlateVoltage

  • Screen-grid voltage

    30 V

    GatedAmplifier;LowPlateVoltage

  • Grid voltage

    0 V

    GatedAmplifier;LowPlateVoltage

  • Plate current

    2 mA

    GatedAmplifier;LowPlateVoltage

  • Screen-grid current

    4.5 mA

    GatedAmplifier;LowPlateVoltage

Data set 02

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Maximum Cathode Current

    14 mA

Data set 03

1965 Sylvania Electronic Tubes Vol3

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Plate voltage

    100 V

    Grid3=-1V

  • Screen-grid voltage

    30 V

  • Grid 1 voltage

    0 V

  • Grid 3 voltage

    -1 V

  • Plate current

    0.8 mA

  • Screen-grid current

    5.5 mA

Characteristics

  • Grid 1 transconductance

    1100 uS

  • Grid 3 transconductance

    1500 uS

  • Plate resistance

    1000000 Ohm

Capacitance

  • Grid 1 to plate capacitance

    0.07 pF

  • Grid 3 to plate capacitance

    0.36 pF

  • Grid 1 input capacitance

    5.5 pF

  • Grid 3 input capacitance

    7 pF

Data set 04

1965 Westinghouse Data Book

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristics

  • Heater Voltage

    6.3 V

  • Heater Current

    300 mA

  • Transconductance

    1500 uS

    RepresentativePublishedPoint

  • Plate Resistance

    1000000 ohm

    RepresentativePublishedPoint

Other

  • Maximum Plate Voltage

    300 V

  • Maximum Plate Dissipation

    1 W

Data set 05

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Maximum cathode current

    14 mA

  • Plate voltage

    100 V

    ClassA

  • Grid 2 and 4 voltage

    30 V

    ClassA

Characteristic

  • Plate current

    0.8 mA

    ClassA

  • Transconductance, grid 3 to plate

    1500 uS

    ClassA

  • Plate resistance

    0.7 Mohm

    ClassA

  • Transconductance, grid 1 to plate

    200 uS

    ClassA

Capacitance

  • Grid-1-to-plate capacitance

    0.04 pF

  • Grid-3-to-plate capacitance

    0.3 pF

  • Grid-1-to-grid-3 coupling capacitance maximum

    0.22 pF

Data set 06

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • HeaterVoltageNominal

    6.3 V

  • HeaterCurrentNominal

    300 mA

Characteristic

  • Plate Resistance

    1000000 Ohm

  • Transconductance

    1100 uS

  • Grid3 Transconductance

    1500 uS

    Grid3Control

  • Grid1Transconductance

    1100 uS

    Grid1Control

Data set 07

1971 RCA HB3 Binder 4 of 7

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristics

  • Voltage

    6.3 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Current

    300 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid No.l to cathode 8 grid No.5,

    8

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • No.3, and heater

    5.5

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • No.1, and heater

    7

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • No.3, grid No.1, and heater

    7.5

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Plate Voltage — published value 1

    100 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Plate Voltage — published value 2

    100 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.2 & Grid-No.4 Voltage — published value 1

    30 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.2 & Grid-No.4 Voltage — published value 2

    30 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.3 Voltage — published value 1

    -1 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.3 Voltage — published value 2

    0 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.1 Voltage — published value 1

    0 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.1 Voltage — published value 2

    -1 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Plate Resistance (Approx.) — published value 1

    0 Mohm

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Plate Resistance (Approx.) — published value 2

    1 Mohm

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.3-to-Plate Transconductance 1500

    1500

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.l-to-Plate Transconductance

    1100

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Plate Current — published value 1

    0.8 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Plate Current — published value 2

    1 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.2 d Grid-No.4 Current — published value 1

    5.5 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid-No.2 d Grid-No.4 Current — published value 2

    1.3 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • plate current of 50 µamp — published value 1

    50 V

    Published datasheet value; multiple values represent separate source-table limits or conditions.

Other

  • Grid No.l to plate

    0.07 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid No.3 to plate

    0.36 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

  • Grid No.l to grid No.3

    0.22 mA

    Published datasheet value; multiple values represent separate source-table limits or conditions.

Data set 08

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Heater Voltage (ac/dc) 3.15 4.2 6.3

    12.6 V

    Published in approved 12CS6 target entry; Section1

  • Heater Current 0.6 0.45 0.3

    150 mA

    Published in approved 12CS6 target entry; Section1

  • Heater Warm-up Time (Average) 11 11

    11 seconds

    Published in approved 12CS6 target entry; Section1

  • Grid-No.3-to-Plate Transconductance

    1500 µS

    Published in approved 12CS6 target entry; Section1

  • Grid-No.l-to-PIate Transconductance

    1100 µS

    Published in approved 12CS6 target entry; Section1

  • Plate Current 0.8

    1 mA

    Published in approved 12CS6 target entry; Section1

  • Grids-No.2-and-No.-4 Current 5.5

    1.3 mA

    Published in approved 12CS6 target entry; Section1

  • 50 iiA

    2.2 V

    Published in approved 12CS6 target entry; Section1

  • 50 /l A —

    -2.6 V

    Published in approved 12CS6 target entry; Section1

  • Plate Voltage

    300 V

    Published in approved 12CS6 target entry; Section1

  • Grids-No.2-and-No.4 Supply Voltage

    300 V

    Published in approved 12CS6 target entry; Section1

  • Cathode Current

    14 mA

    Published in approved 12CS6 target entry; Section1

  • Plate Dissipation

    1 W

    Published in approved 12CS6 target entry; Section1

  • For grids-No. 2-and-No.4 voltages up to

    150 V

    Published in approved 12CS6 target entry; Section1

  • For grids-No. 2-and-No.4 voltages up to 150 volts

    1 W

    Published in approved 12CS6 target entry; Section1

  • For grids-No.2-and-No.4 voltages between 150 and

    300 V

    Published in approved 12CS6 target entry; Section1

  • Grid-No.l-Circuit Resistance

    0.47 MΩ

    Published in approved 12CS6 target entry; Section1

  • Grid-No. 3-Circuit Resistance

    2.2 MΩ

    Published in approved 12CS6 target entry; Section1

Capacitance

  • Grid No.4, and Grid No.5

    5.5 pF

    Published in approved 12CS6 target entry; Section1

  • Grid No.4, and Grid No.5

    7 pF

    Published in approved 12CS6 target entry; Section1

  • Grid No.4, and Grid No.5

    7.5 pF

    Published in approved 12CS6 target entry; Section1

Characteristic

  • Plate Voltage 100

    100 V

    Published in approved 12CS6 target entry; Section1

  • Plate Resistance (Approx.) 0.7

    1 MΩ

    Published in approved 12CS6 target entry; Section1