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Voltage - Triode (with diode, heptode or hexode) ·Diode-Diode-Triode

6BV8

Duplex-diode medium-mu triode designed for synchronous detection, chrominance amplification, FM detection, and audio-frequency voltage amplification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
-
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 600 mA

Description

6BV8 is a DualDiodeTriode device. Duplex-diode medium-mu triode for synchronous detector/chrominance amplifier, FM detector, and AF voltage-amplifier service.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
600 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
5900 Ω
Transconductance
0.0056 S
Amplification factor
33
Max plate voltage
330 V
Max plate dissipation
2.7 W

Duplex-diode medium-mu triode for synchronous detector/chrominance amplifier, FM detector, and AF voltage-amplifier service.

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Diode 1.

Section 3

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Diode 2.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Plate Voltage

    200 V

    Published operating/characteristic table

  • Grid Voltage

    0 V

    Published operating/characteristic table

Characteristic

  • Plate Current

    11 mA

    Published operating/characteristic table

  • Transconductance

    5600 uS

    Published operating/characteristic table

  • Plate Resistance

    5900 ohm

    Published operating/characteristic table

SECTION 2

Diode

Other

  • Plate Voltage

    200 V

    Published operating/characteristic table

  • Grid Voltage

    0 V

    Published operating/characteristic table

Characteristic

  • Plate Current

    11 mA

    Published operating/characteristic table

  • Transconductance

    5600 uS

    Published operating/characteristic table

  • Plate Resistance

    5900 ohm

    Published operating/characteristic table

Data set 02

1966 Tung Sol Electronic Tubes 1 of 4

Published operating points and test conditions from this source.

SECTION 1

Triode

Capacitance

  • Triode grid-to-plate capacitance

    2 pF

  • Triode input capacitance

    3.6 pF

  • Triode output capacitance

    0.4 pF

Other

  • Plate voltage

    200 V

    TriodeSection

  • Plate current

    11 mA

    TriodeSection

Characteristic

  • Amplification factor

    33

  • Plate resistance

    5.9 kOhm

SECTION 2

Diode

Other

  • Maximum continuous diode current

    - to 10 mA

    Diode1

SECTION 3

Diode

Other

  • Maximum continuous diode current

    - to 10 mA

    Diode2

Data set 03

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Typical Plate Voltage

    200 V

SECTION 2

Diode

Other

  • Maximum Continuous Diode Current

    10 mA

    Section2

Characteristic

  • Average Diode Current At5 V

    23 mA

    Section2

SECTION 3

Diode

Other

  • Maximum Continuous Diode Current

    10 mA

    Section3

Characteristic

  • Average Diode Current At5 V

    23 mA

    Section3