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Voltage Pentode - Remote Cutoff (single) ·Pentode

6BH5

Remote-cutoff RF pentode for variable-gain high-frequency amplifier service and automatic gain-control applications.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
9AZ
Socket code
B7G
Base pins
7
Nominal heater
6.3 V / 200 mA

Description

Remote-cutoff RF pentode for variable-gain high-frequency amplifier service. Published ratings, characteristics, capacitances, and representative operating conditions were extracted from the approved manual page where available.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9AZ
Socket code
B7G
Base pins
7
Nominal heater voltage
6.3 V
Nominal heater current
200 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9AZ - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1G2AG2 — Screen Grid

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN2G1AG1 — Control Grid

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN3G3AG3 — Suppressor GridGroup 9AZ3

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN3ISAIS — Internal ScreenGroup 9AZ3

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN3KAK — CathodeGroup 9AZ3

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN4H—H — Heater

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN5H—H — Heater

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN6PAP — Plate (Anode)

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN7IC—IC

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

PIN8IC—IC

Original EIA label preserved, manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 131, 9AZ

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1100000 Ω
Transconductance
0.0022 S
Amplification factor
18
Max plate voltage
300 V
Max screen voltage
125 V
Max plate dissipation
2 W
Max screen dissipation
0.3 W
Max cathode current
10 mA

Remote-cutoff RF pentode for variable-gain high-frequency amplifier service.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    250 V

    ClassA; OperatingPoint1

  • Screen voltage

    100 V

    ClassA; OperatingPoint1

  • Control-grid bias

    2.5 V

    ClassA; OperatingPoint1

  • Plate current

    6 mA

    ClassA; OperatingPoint1

  • Screen current

    1.7 mA

    ClassA; OperatingPoint1

  • Plate resistance

    1100000 ohm

    ClassA; OperatingPoint1

  • Transconductance

    2200 uS

    ClassA; OperatingPoint1

Data set 02

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    200 mA

  • Plate voltage

    250 V

  • Screen voltage

    90 V

  • Plate current

    6 mA

  • Screen current

    1.7 mA

  • Transconductance

    2200 uS

  • Plate resistance

    1100000 ohm

  • Screen-grid amplification factor

    18

  • Controlled transconductance

    22 uS

    RemoteCutoffPoint

  • Equivalent noise resistance

    6500 ohm

Capacitance

  • Input capacitance

    5.5 pF

  • Output capacitance

    4.5 pF

  • Plate-grid capacitance maximum

    0.002 pF