Skip to main content
Tube Tinker — Electron Tube Database
Alternatives & variationsDownload PDF datasheet

Voltage - Triode (with diode, heptode or hexode) ·Diode-Diode-Triode-Triode

6B10

Twin-diode twin-triode Compactron designed for television horizontal phase-detector and horizontal-oscillator circuits, integrating phase comparison and sweep-control functions.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
4
Base
12BF
Socket code
B12C
Base pins
12
Nominal heater
6.3 V / 600 mA

Description

Twin-diode, medium-mu twin-triode tube for television horizontal phase-detector and horizontal-oscillator circuits.

Socket description

Duodecar 12-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
12BF
Socket code
B12C
Base pins
12
Nominal heater voltage
6.3 V
Nominal heater current
600 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

12BF - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

4 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
7200 Ω
Transconductance
0.0025 S
Amplification factor
18
Max plate voltage
330 V
Max plate dissipation
3 W
Max cathode current
20 mA

Representative row for the two electrically identical triode sections.

Section 2

Triode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Second physical triode section added to match documented twin-triode/twin-diode construction.

Section 3

Diode

X-ray radiationInterelectrode capacitances
Max cathode current
5 mA
Rectifier forward voltage drop
5 V

Representative row for the two identical phase-detector diode sections.

Section 4

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Second physical diode section added to match documented twin-triode/twin-diode construction.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Plate Voltage

    250 V

    EachTriode

  • Grid Voltage

    -8 V

    EachTriode

  • Plate Current

    10 mA

    EachTriode

Characteristic

  • GridVoltageAtPlateCurrent50uA

    -20 V

    EachTriode

Capacitance

  • Grid To Plate Capacitance

    1.5 pF

    Section1

  • Input Capacitance

    1.7 pF

    Section1

  • Output Capacitance

    1.6 pF

    Section1

  • Grid To Plate Capacitance

    1.5 pF

    Section2

  • Input Capacitance

    1.8 pF

    Section2

  • Output Capacitance

    0.6 pF

    Section2

  • TriodeGridToDiode1PlateCapacitance

    0.015 pF

    TriodeSection1

  • TriodeGridToDiode1PlateCapacitance

    0.005 pF

    TriodeSection2

  • TriodeGridToDiode2PlateCapacitance

    0.02 pF

    TriodeSection1

  • TriodeGridToDiode2PlateCapacitance

    0.005 pF

    TriodeSection2

SECTION 3

Diode

Other

  • Maximum Continuous Diode Current

    5 mA

    EachDiode

Characteristic

  • Average Diode Current

    20 mA

    EachDiode; AppliedDC=5V

Capacitance

  • DiodePlateToCathodeHeaterShieldCapacitance

    1.9 pF

    Diode1

  • DiodePlateToCathodeHeaterShieldCapacitance

    1.8 pF

    Diode2

  • DiodePlateToDiodePlateCapacitance

    0.7 pF

    CrossSection

Data set 02

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Heater Voltage (ac/dc) 6.3

    8.5 V

    Published in approved 8B10 target datasheet entry; Section1

  • Heater Current 0.6

    450 mA

    Published in approved 8B10 target datasheet entry; Section1

  • Heater Warm-up Time (Average) 11

    11 seconds

    Published in approved 8B10 target datasheet entry; Section1

  • Plate Voltage

    330 V

    Published in approved 8B10 target datasheet entry; Section1

  • Average Cathode Current

    20 mA

    Published in approved 8B10 target datasheet entry; Section1

  • Plate Dissipation

    3 W

    Published in approved 8B10 target datasheet entry; Section1

  • Plate Voltage

    250 V

    Published in approved 8B10 target datasheet entry; Section1

  • Grid Voltage

    -8 V

    Published in approved 8B10 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    7200 Ω

    Published in approved 8B10 target datasheet entry; Section1

  • Transconductance

    2500 µS

    Published in approved 8B10 target datasheet entry; Section1

  • Plate Current

    10 mA

    Published in approved 8B10 target datasheet entry; Section1

  • Grid Voltage (Approx.) for plate current of 50 /iA

    20 V

    Published in approved 8B10 target datasheet entry; Section1

  • For fixed-bias operation

    0.25 MΩ

    Published in approved 8B10 target datasheet entry; Section1

  • For cathode-bias operation

    1 MΩ

    Published in approved 8B10 target datasheet entry; Section1

  • Plate Current

    5 mA

    Published in approved 8B10 target datasheet entry; Section1

  • Tube Voltage Drop for plate current of

    20 mA

    Published in approved 8B10 target datasheet entry; Section1

  • Tube Voltage Drop for plate current of 20 mA

    5 V

    Published in approved 8B10 target datasheet entry; Section1

SECTION 3

Diode

Other

  • Heater Voltage (ac/dc) 6.3

    8.5 V

    Published in approved 8B10 target datasheet entry; Section2

  • Heater Current 0.6

    450 mA

    Published in approved 8B10 target datasheet entry; Section2

  • Heater Warm-up Time (Average) 11

    11 seconds

    Published in approved 8B10 target datasheet entry; Section2

  • Plate Voltage

    330 V

    Published in approved 8B10 target datasheet entry; Section2

  • Average Cathode Current

    20 mA

    Published in approved 8B10 target datasheet entry; Section2

  • Plate Dissipation

    3 W

    Published in approved 8B10 target datasheet entry; Section2

  • Plate Voltage

    250 V

    Published in approved 8B10 target datasheet entry; Section2

  • Grid Voltage

    -8 V

    Published in approved 8B10 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    7200 Ω

    Published in approved 8B10 target datasheet entry; Section2

  • Transconductance

    2500 µS

    Published in approved 8B10 target datasheet entry; Section2

  • Plate Current

    10 mA

    Published in approved 8B10 target datasheet entry; Section2

  • Grid Voltage (Approx.) for plate current of 50 /iA

    20 V

    Published in approved 8B10 target datasheet entry; Section2

  • For fixed-bias operation

    0.25 MΩ

    Published in approved 8B10 target datasheet entry; Section2

  • For cathode-bias operation

    1 MΩ

    Published in approved 8B10 target datasheet entry; Section2

  • Plate Current

    5 mA

    Published in approved 8B10 target datasheet entry; Section2

  • Tube Voltage Drop for plate current of

    20 mA

    Published in approved 8B10 target datasheet entry; Section2

  • Tube Voltage Drop for plate current of 20 mA

    5 V

    Published in approved 8B10 target datasheet entry; Section2