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Voltage - Triode (with diode, heptode or hexode) ·Diode-Diode-Diode-Triode

6AK8

Triple-diode high-mu triode combining AM/FM detector or discriminator functions with voltage amplification. Three diode sections provide multiple signal and control-voltage rectification paths while the triode supplies subsequent audio-frequency gain.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
4
Base
9E
Socket code
B9A
Base pins
9
Nominal heater
6.3 V / 450 mA

Description

Triple-diode triode for detection and low-frequency voltage amplification; source also designates 6AK8.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9E
Socket code
B9A
Base pins
9
Nominal heater voltage
6.3 V
Nominal heater current
450 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9E - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN11P3AP — Plate (Anode)

Original EIA source designation 1P3; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN22PBP — Plate (Anode)

Original EIA source designation 2P; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN3ISAIS — Internal ScreenGroup 9E3

Original EIA source designation IS; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN32KBK — CathodeGroup 9E3

Original EIA source designation 2K; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN4H—H — Heater

Original EIA source designation H; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN5H—H — Heater

Original EIA source designation H; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN61P2AP — Plate (Anode)

Original EIA source designation 1P2; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN7ISAIS — Internal ScreenGroup 9E7

Original EIA source designation IS; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN71KAK — CathodeGroup 9E7

Original EIA source designation 1K; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN81G1AG1 — Control Grid

Original EIA source designation 1G1; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

PIN91PAP — Plate (Anode)

Original EIA source designation 1P; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 130, 9E

Section ratings

4 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances
Rectifier peak inverse voltage
350 V
Rectifier nominal output current
10 mA
Rectifier peak forward current
75 mA

Published ratings/characteristics promoted where clearly stated; repeated identical sections compressed where applicable.

Section 2

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
58000 Ω
Transconductance
0.0012 S
Amplification factor
70
Max plate voltage
300 V
Max plate dissipation
1 W
Max cathode current
5 mA

Published maximum ratings, representative operating characteristics, and capacitance columns reviewed.

Section 3

Diode

X-ray radiationInterelectrode capacitances
Rectifier peak inverse voltage
350 V
Rectifier nominal output current
10 mA
Rectifier peak forward current
75 mA

Promoted values and additional parameters were taken from the supplied Ferranti datasheet tables.

Section 4

Diode

X-ray radiationInterelectrode capacitances
Rectifier peak inverse voltage
350 V
Rectifier nominal output current
10 mA
Rectifier peak forward current
75 mA

Promoted values and additional parameters were taken from the supplied Ferranti datasheet tables.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1953 RFT Rundfunk Technik

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Heater voltage

    6.3 V

    Published nominal value

  • Heater current

    450 mA

    Published nominal value

  • Transconductance

    1500 µS

    Published operating characteristic

SECTION 2

Triode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    450 mA

    Nominal

  • Maximum Plate Voltage

    300 V

  • Maximum Plate Dissipation

    1 W

Data set 02

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 2

Triode

Other

  • Maximum plate voltage

    300 V

    Published handbook rating

  • Plate voltage

    250 V

    ClassA

  • Control-grid bias

    3 V

    ClassA

  • Plate current

    1 mA

    ClassA

Characteristic

  • Plate resistance

    58000 ohm

    Published handbook characteristic

  • Transconductance

    1200 µS

    Published handbook characteristic

  • Amplification factor

    70

    Published handbook characteristic

  • Heater voltage

    6.3 V

    Published heater rating

  • Heater current

    450 mA

    Published heater rating

Capacitance

  • Input capacitance

    1.9 pF

    Published capacitance column

  • Output capacitance

    1.6 pF

    Published capacitance column

  • Grid-to-plate capacitance

    2.2 pF

    Published capacitance column

Data set 03

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristics

  • Diode impedance

    5000 Ohm

    Diode1;Vad=10V

SECTION 2

Triode

Characteristics

  • Plate voltage

    100 V

    Point1

  • Control-grid voltage

    -1 V

    Point1

  • Plate current

    0.8 mA

    Point1

  • Transconductance

    1450 uS

    Point1

  • Amplification factor

    70 ratio

    Point1

  • Plate resistance

    48000 Ohm

    Point1

  • Plate voltage

    250 V

    Point2

  • Control-grid voltage

    -3 V

    Point2

  • Plate current

    1 mA

    Point2

  • Transconductance

    1400 uS

    Point2

  • Amplification factor

    70 ratio

    Point2

  • Plate resistance

    50000 Ohm

    Point2

Capacitance

  • Input capacitance

    1.9 pF

    TriodeSection

  • Output capacitance

    1.4 pF

    TriodeSection

Other

  • Plate supply voltage

    250 V

    AFAmplifier

  • Plate load resistance

    220 kOhm

    AFAmplifier

  • Plate current

    0.8 mA

    AFAmplifier

  • Stage gain

    55 ratio

    AFAmplifier

SECTION 3

Diode

Characteristics

  • Diode impedance

    200 Ohm

    Diode2;Vad=5V

SECTION 4

Diode

Characteristics

  • Diode impedance

    200 Ohm

    Diode3;Vad=5V

Data set 04

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Diode

Application

  • Application

    DetectorRectifier text

SECTION 2

Triode

Application

  • Application

    AFVoltageAmplifier text

Data set 05

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

  • Peak inverse voltage

    350 V

  • Average diode current

    1 mA

  • Peak diode current

    6 mA

Capacitance

  • Diode capacitance

    0.8 pF

SECTION 2

Triode

Characteristics

  • Heater voltage

    6.3 V

  • Heater current

    450 mA

Capacitance

  • Triode plate-grid capacitance

    2.2 pF

  • Triode input capacitance

    1.9 pF

SECTION 3

Diode

Other

  • Peak inverse voltage

    350 V

  • Average diode current

    10 mA

  • Peak diode current

    75 mA

Capacitance

  • Diode capacitance

    8.7 pF