Skip to main content

Voltage Pentode - Sharp Cutoff (single) ·Pentode

6AH6

Very-high-transconductance sharp-cutoff miniature pentode designed for voltage-amplifier service. Its high slope provides substantial fixed gain for demanding high-frequency and broadband signal stages.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
E7-1
Socket code
B7G
Base pins
7
Nominal heater
6.3 V / 450 mA

Description

Very-high-transconductance sharp-cutoff miniature pentode for voltage-amplifier service.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
E7-1
Socket code
B7G
Base pins
7
Nominal heater voltage
6.3 V
Nominal heater current
450 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

E7-1 - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
500000 Ω
Transconductance
0.008 S
Max plate voltage
300 V
Max screen voltage
150 V
Max plate dissipation
3.2 W
Max screen dissipation
0.4 W
Max cathode current
13 mA

6AH6 indirectly heated high-transconductance sharp-cutoff seven-pin miniature pentode for wideband video, RF and IF amplification or reactance-tube service. Heater 6.3 V 0.45 A. GE, Tung-Sol and Sylvania report design-center maximum plate 300 V, plate dissipation 3.2 W, screen dissipation 0.4 W and cathode current 13 mA. Existing 150 V max_screen_voltage retained; manufacturers also specify a conditional grid-2 screen-supply maximum of 300 V with actual screen voltage subject to a rating chart, not an unrestricted electrode limit. Pentode-connected at plate 300 V, screen 150 V, cathode resistor 160 Ω, plate current 10 mA, screen current 2.5 mA: GE gives gm ~8000 µmhos (0.008 S), Sylvania and other editions ~9000 µmhos (0.009 S), approximate plate resistance 500 kΩ; existing 0.008 S retained due to source variation. Triode connection (grids 2 and 3 tied to plate) at plate 150 V: typical gm 11000 µmhos, amplification factor ~40, plate resistance ~3600 Ω; this is an alternative connection, NOT an additional physical section. Grid-3-to-plate gm only ~2 µmhos and not an ordinary independent signal control. Shielded interelectrode capacitances grid-to-plate max 0.020 pF, input 10 pF, output 3.6 pF.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1938 Raytheon

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater or filament voltage

    6.3 V

    Published nominal or representative value

  • Heater or filament current

    450 mA

    Published nominal or representative value

  • Transconductance

    9000 µS

    Published operating characteristic

Other

  • Maximum plate dissipation

    3.2 W

    Published maximum rating

Data set 02

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    300 V

    ClassA;PentodeConnection

  • Screen-grid voltage

    150 V

    ClassA;PentodeConnection

  • Cathode resistor

    160 ohm

    ClassA;PentodeConnection

  • Plate current

    10 mA

    ClassA;PentodeConnection

  • Screen-grid current

    2.5 mA

    ClassA;PentodeConnection

  • Plate voltage

    150 V

    ClassA;TriodeConnection

  • Cathode resistor

    160 ohm

    ClassA;TriodeConnection

  • Plate current

    12.5 mA

    ClassA;TriodeConnection

  • Plate resistance

    3600 ohm

    ClassA;TriodeConnection

  • Transconductance

    11000 uS

    ClassA;TriodeConnection

  • Amplification factor

    40

    ClassA;TriodeConnection

Data set 03

1966 Tung Sol Electronic Tubes 1 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    300 V

    PentodeConnection

  • Plate current

    10 mA

    PentodeConnection

  • Screen current

    2.5 mA

    PentodeConnection

  • Plate voltage

    150 V

    TriodeConnection

  • Plate current

    12.5 mA

    TriodeConnection

  • Application

    Very-high-transconductance sharp-cutoff voltage amplifier

    Section1

Characteristic

  • Transconductance

    9000 µS

    PentodeConnection

  • Plate resistance

    3600 Ω

    TriodeConnection

  • Transconductance

    11000 µS

    TriodeConnection

  • Amplification factor

    40

    TriodeConnection

Data set 04

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterOrFilamentVoltageNominal

    6.3 V

  • HeaterOrFilamentCurrentNominal

    450 mA

  • Maximum Plate Voltage

    300 V

  • Maximum Screen Voltage

    150 V

  • Maximum Plate Dissipation

    3.2 W

  • Maximum Screen Dissipation

    0.4 W

  • Maximum Cathode Current

    13 mA

Characteristic

  • Plate Resistance

    500000 Ohm

  • Transconductance

    8000 uS

Data set 05

1969 Tesla Manual of Electronic Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Application

  • Application

    RF_IF_Amplifier text