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Voltage Pentode or Tetrode (under 100V) ·Pentode

6611

Extremely low-drain directly heated subminiature RF pentode for battery-powered miniature equipment, providing useful gain from low plate voltages.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
B5D
Base pins
5
Nominal heater
1.25 V / 20 mA

Description

Filamentary subminiature pentode designed for compact, low-drain RF amplifier applications. Electrical ratings, characteristics, operating data, and special environmental information were extracted from the supplied source.

Socket description

Subminiature wire-ended

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
B5D
Base pins
5
Nominal heater voltage
1.25 V
Nominal heater current
20 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
400000 Ω
Transconductance
0.001 S
Max plate voltage
50 V
Max screen voltage
50 V
Max plate dissipation
0.1 W
Max screen dissipation
0.02 W
Max cathode current
1.9 mA

Published maximum ratings and typical characteristics promoted from the approved source; identical repeated sections compressed where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1938 Raytheon

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    1.25 V

    Nominal

  • HeaterCurrentNominal

    20 mA

    Nominal

  • Maximum Plate Voltage

    50 V

  • Maximum Plate Dissipation

    0.1 W

  • Maximum Cathode Current

    1.9 mA

Characteristic

  • Transconductance

    1000 µS

    Typical

  • Plate Resistance

    400000 ohm

    Typical

Data set 02

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater voltage

    1.25 V

    Nominal

  • Heater current

    20 mA

    Nominal

  • Plate voltage

    30 V

    Published operating table; OperatingPoint1

  • Plate voltage

    45 V

    Published operating table; OperatingPoint2

  • Screen voltage

    50 V

    Published operating table; OperatingPoint1

Characteristic

  • Plate current

    1 mA

    Published operating table; OperatingPoint1

  • Plate current

    10 mA

    Published operating table; OperatingPoint2

Data set 03

1966 Tung Sol Electronic Tubes 4 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • LIMITS OF APPLIED VOLTAGE — published value 1

    1.25 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • LIMITS OF APPLIED VOLTAGE — published value 2

    0.35 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE VOLTAGE

    50 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 2 VOLTAGE

    50 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE DISSIPATION

    0.1 W

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 2 DISSIPATION

    0.02 W

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • TOTAL CATHODE CURRENT

    1.9 mA

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE VOLTAGE — published value 1

    30 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE VOLTAGE — published value 2

    45 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 2 VOLTAGE — published value 1

    30 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 2 VOLTAGE — published value 2

    45 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 1 VOLTAGE (GRID RESISTOR = 5 MEGOHMS) — published value 1

    0 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 1 VOLTAGE (GRID RESISTOR = 5 MEGOHMS) — published value 2

    0 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE CURRENT — published value 1

    1 mA

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE CURRENT — published value 2

    1 mA

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 2 CURRENT — published value 1

    0.35 mA

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 2 CURRENT — published value 2

    0.35 mA

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • TRANSCONDUCTANCE — published value 1

    1000 uS

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • TRANSCONDUCTANCE — published value 2

    1000 uS

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE RESISTANCE —APPROX. — published value 1

    0.4 Mohm

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • PLATE RESISTANCE —APPROX. — published value 2

    0.4 Mohm

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • GRID 1 VOLTAGE (APPROX.) FOR Gm = 10 vMHOS

    3 V

    Published datasheet table value; multiple values on a source row represent separate limits or operating conditions.

  • Plate resistance

    400000 ohm

    Promoted section value from the supplied datasheet.

  • Transconductance

    0.001 A/V

    Promoted section value from the supplied datasheet.

Other

  • Maximum plate voltage

    50 V

    Promoted section value from the supplied datasheet.

  • Maximum screen voltage

    50 V

    Promoted section value from the supplied datasheet.

  • Maximum plate dissipation

    0.1 W

    Promoted section value from the supplied datasheet.

  • Maximum screen dissipation

    0.02 W

    Promoted section value from the supplied datasheet.

  • Maximum cathode current

    1.9 mA

    Promoted section value from the supplied datasheet.