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Voltage - Triode (single) ·Triode

6533

French CGT 6533 rugged low-microphonic indirectly heated subminiature high-mu audio-voltage triode for military and professional low-level signal amplification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
-
Base pins
-
Nominal heater
6.3 V / 200 mA

Description

The 6533 is a rugged subminiature high-mu AF voltage-amplifier triode with low microphonic noise for weak-signal amplification.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
-
Base pins
-
Nominal heater voltage
6.3 V
Nominal heater current
200 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
30000 Ω
Transconductance
0.0018 S
Amplification factor
54
Max plate voltage
150 V
Max plate dissipation
0.5 W

French CGT 6533 antimicrophonic subminiature triode, 1958. Max plate 150 V, dissipation 0.5 W, plate current 25 mA, grid negative magnitude 55 V, grid resistance 1.2 MΩ, heater-cathode ±200 V, bulb max 220°C. Class A typical Va 120 V, Rk 1500 Ω, Ia 0.92 mA, mu 54 (range 48–60), rp 30000 Ω, gm approx 0.0018 A/V (acceptance 1.58–1.92 mA/V). Unshielded Cgp 1.6 pF (1.2–2), input 1.75 pF (1.3–2.2), output 0.6 pF (0.4–0.8). Shock 450 g, vibration 2.5 g, 2000 heater cycles.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1958 Compagnie General

Published operating points and test conditions from this source.

SECTION 1

Triode

Characteristics

  • Heater Voltage

    6.3 V

  • Heater Current

    200 mA

  • Grid-to-Plate Capacitance

    1.6 pF

  • Input Capacitance

    1.75 pF