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Voltage Pentode - Remote Cutoff (single) ·Pentode

5899

Remote- or semi-remote-cutoff pentode designed for RF, IF, variable-mu, or controlled-gain amplifier service.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
8DL
Socket code
B8D
Base pins
8
Nominal heater
6.3 V / 150 mA

Description

Subminiature semi-remote-cutoff pentode designed for controlled-gain amplifier service, with rugged special-quality testing.

Socket description

Subminiature 8-lead

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
8DL
Socket code
B8D
Base pins
8
Nominal heater voltage
6.3 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

8DL - Terminal pinout

Electrical assignments shared by every tube using this base designation.

TerminalSectionConnectionEvidence
PIN1G1AG1 — Control Grid

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN2G3AG3 — Suppressor GridGroup 8DL2

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN2KAK — CathodeGroup 8DL2

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN3H—H — Heater

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN4G3AG3 — Suppressor GridGroup 8DL4

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN4KAK — CathodeGroup 8DL4

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN5PAP — Plate (Anode)

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN6H—H — Heater

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN7G2AG2 — Screen Grid

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN8G3AG3 — Suppressor GridGroup 8DL8

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

PIN8KAK — CathodeGroup 8DL8

EIA source transcription; manufacturer confirmation pending

Unverified

EIA Base Connections, printed page 129, 8DL

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
260000 Ω
Transconductance
0.0045 S
Max plate voltage
165 V
Max screen voltage
155 V
Max plate dissipation
1.1 W
Max screen dissipation
0.55 W
Max cathode current
16.5 mA

Promoted from clearly identified printed ratings/characteristics; additional published operating points, capacitances, and specialized ratings retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1938 Raytheon

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • HeaterVoltageNominal

    6.3 V

    Nominal

  • HeaterCurrentNominal

    150 mA

    Nominal

  • Maximum Plate Voltage

    165 V

  • Maximum Plate Dissipation

    0.85 W

  • Maximum Cathode Current

    20 mA

Characteristic

  • Transconductance

    4500 µS

    Typical

  • Plate Resistance

    175000 ohm

    Typical

Data set 02

1958 Compagnie General

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater Voltage

    6.3 V

  • Heater Current

    150 mA

Data set 03

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Input capacitance

    4.2 pF

    Section1

  • Output capacitance

    3.4 pF

    Section1

  • Grid-to-plate capacitance

    0.015 pF

    Section1

Other

  • Plate voltage

    100 V

    ClassA

  • Screen voltage

    100 V

    ClassA

  • Cathode resistor

    120 Ω

    ClassA

  • Plate current

    7.2 mA

    ClassA

  • Screen current

    2 mA

    ClassA

Characteristic

  • Plate resistance

    260000 Ω

    ClassA

  • Transconductance

    4500 µS

    ClassA

Data set 04

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

  • HeaterOrFilamentVoltage

    6.3 V

  • HeaterOrFilamentCurrent

    150 mA

  • Plate Voltage

    100 V

  • Screen Voltage

    100 V

  • Grid Voltage

    -1.1 V

  • Plate Current

    7.2 mA

  • Screen Current

    2 mA

  • Transconductance

    4500 uS

  • PlateToGridCapacitanceMax

    0.015 pF

  • Input Capacitance

    4.3 pF

  • Output Capacitance

    3.4 pF

Data set 05

1966 Tung Sol Electronic Tubes 3 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater voltage

    6.3 V

  • Heater current

    150 mA

  • Plate voltage

    100 V

    ClassA

  • Screen voltage

    100 V

    ClassA

  • Cathode bias resistor

    120 ohm

    ClassA

  • Plate current

    7.2 mA

    ClassA

  • Screen current

    2 mA

    ClassA

  • Maximum plate voltage

    165 V

  • Maximum screen voltage

    155 V

  • Maximum plate dissipation

    0.75 W

  • Maximum screen dissipation

    0.35 W

  • Maximum cathode current

    16.5 mA

Capacitance

  • Grid1-to-plate capacitance maximum

    0.03 pF

  • Input capacitance

    4 pF

  • Output capacitance

    1.9 pF

Data set 06

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Plate-to-Grid Capacitance

    <15 mpF

    PublishedCapacitance

  • Input Capacitance

    4.3 pF

    PublishedCapacitance

  • Output Capacitance

    3.4 pF

    PublishedCapacitance

Characteristic

  • Plate Voltage

    100 V

    PublishedCharacteristics

  • Screen Voltage

    100 V

    PublishedCharacteristics

  • Control Grid Voltage

    -1.1 V

    PublishedCharacteristics

  • Plate Current

    7.2 mA

    PublishedCharacteristics

  • Screen Current

    2 mA

    PublishedCharacteristics

  • Transconductance

    4500 uS

    PublishedCharacteristics

  • Plate Resistance

    >175 kohm

    PublishedCharacteristics

  • Transconductance at -15.5 V Grid

    25 uS

    PublishedCharacteristics

Other

  • Plate Supply Voltage

    330 V

    AbsoluteRatings

  • Plate Voltage

    165 V

    AbsoluteRatings

  • Plate Dissipation

    0.75 W

    AbsoluteRatings

  • Screen Supply Voltage

    310 V

    AbsoluteRatings

  • Screen Voltage

    155 V

    AbsoluteRatings

  • Screen Dissipation

    0.35 W

    AbsoluteRatings

  • Cathode Current

    16.5 mA

    AbsoluteRatings

  • Heater-Cathode Voltage

    200 V

    AbsoluteRatings

Data set 07

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate Voltage

    100 V

    ClassA

  • Screen Voltage

    100 V

    ClassA

  • Plate Current

    7.2 mA

    ClassA

  • Screen Current

    2 mA

    ClassA

Data set 08

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Anode current

    7.2 mA

    Typical

  • Screen current

    2 mA

    Typical

  • Anode-screen-cathode-heater capacitance

    3.4 pF

    Interelectrode

  • Grid1-screen-cathode-heater capacitance

    4.2 pF

    Interelectrode