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5784

Subminiature dual-control RF pentode whose transconductance can be varied through the third grid. Manufacturer Class A data document operation at different grid-3 biases, making it useful where electronic gain or signal control is required.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: 5702
Socket code: SUBMINIATURE8
Base pins: 8
Nominal heater: 6.3 V / 200 mA

Description

Subminiature dual-control RF pentode with control-grid-dependent transconductance.

Socket description

Subminiature 8-lead base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: 5702
Socket code: SUBMINIATURE8
Base pins: 8
Nominal heater voltage: 6.3 V
Nominal heater current: 200 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

5702 - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Transconductance: 0.0032 S
Max plate voltage: 180 V
Max screen voltage: 140 V

Dual-control RF pentode.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Input capacitance
3.9 pF
Output capacitance
3 pF
Grid-to-plate capacitance
0.03 pF

Other

Plate voltage
120 V
ClassA
Screen-grid voltage
120 V
ClassA
Grid No.1 voltage
-2 V
ClassA
Plate current
5.2 mA
ClassA Grid3=0V
Plate current
3.6 mA
ClassA Grid3=-3V
Screen-grid current
4.8 mA
ClassA Grid3=-3V

Characteristic

Transconductance
3200 uS
Grid3=0V
Transconductance
1850 uS
Grid3=-3V