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Voltage Pentode or Tetrode (under 100V) ·Pentode

5678

Directly heated subminiature RF pentode for battery-powered miniature equipment, providing useful gain from low plate and filament supplies.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
1AD4
Socket code
B5D
Base pins
5
Nominal heater
1.25 V / 50 mA

Description

Directly heated subminiature pentode for RF amplification.

Socket description

Subminiature wire-ended

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
1AD4
Socket code
B5D
Base pins
5
Nominal heater voltage
1.25 V
Nominal heater current
50 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

1AD4 - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1000000 Ω
Transconductance
0.0011 S
Max plate voltage
90 V
Max screen voltage
67.5 V

Promoted from clearly identified published ratings/characteristics; additional operating points, capacitances, rectifier conditions, and application-specific values are retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1957 Philips Receiving and Amplifying Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Plate Voltage

    67.5 V

  • Screen Voltage

    67.5 V

  • Anode Current

    1.8 mA

Data set 02

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Input Capacitance

    3.3 pF

  • Output Capacitance

    3.8 pF

  • Grid-to-Plate Capacitance

    0.01 pF

Other

  • Plate Voltage

    67.5 V

    ClassA

  • Screen Voltage

    67.5 V

    ClassA

  • Grid Voltage

    0 V

    ClassA

  • Plate Current

    1.8 mA

    ClassA

  • Screen Current

    0.48 mA

    ClassA

Data set 03

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater voltage

    1.25 V

    Nominal

  • Heater current

    50 mA

    Nominal

  • Plate voltage

    90 V

    Published operating table; OperatingPoint1

  • Plate voltage

    46 V

    Published operating table; OperatingPoint1

  • Plate voltage

    67.5 V

    Published operating table; OperatingPoint2

  • Screen voltage

    67.5 V

    Published operating table; OperatingPoint1

Characteristic

  • Plate current

    0.8 mA

    Published operating table; OperatingPoint1

  • Plate current

    1.8 mA

    Published operating table; OperatingPoint2

  • Screen current

    0.22 mA

    Published operating table; OperatingPoint1

  • Screen current

    0.48 mA

    Published operating table; OperatingPoint2

  • Transconductance

    820 uS

    Published operating table; OperatingPoint1

  • Transconductance

    1 uS

    Published operating table; OperatingPoint2

  • Transconductance

    100 uS

    Published operating table; OperatingPoint3

Data set 04

1963 Philips Electron Tubes Handbook V1

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Grid capacitance

    3.7 pF

    Section1

  • Plate capacitance

    4.6 pF

    Section1

  • Grid-to-plate capacitance maximum

    0.01 pF

    Section1

Other

  • Plate voltage

    45 V

    RFAmplifier

  • Screen voltage

    45 V

    RFAmplifier

  • Control-grid voltage

    0 V

    RFAmplifier

  • Plate current

    0.8 mA

    RFAmplifier

  • Screen current

    0.22 mA

    RFAmplifier

  • Plate voltage

    67.5 V

    RFAmplifier

  • Screen voltage

    67.5 V

    RFAmplifier

  • Plate current

    1.8 mA

    RFAmplifier

  • Screen current

    0.48 mA

    RFAmplifier

  • Application

    RF, IF, AF amplifier, oscillator, self-oscillating mixer, AM detector

    Section1

Characteristic

  • Transconductance

    820 µS

    45V

  • Plate resistance

    1.2 MΩ

    45V

  • Transconductance

    1100 µS

    67.5V

  • Plate resistance

    1 MΩ

    67.5V

Data set 05

1966 Tung Sol Electronic Tubes 3 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    67.5 V

    ClassA

  • Grid #2 voltage

    67.5 V

    ClassA

  • Grid #1 voltage

    0 V

    ClassA

  • Plate current

    1.8 mA

    ClassA

  • Grid #2 current

    0.48 mA

    ClassA

Characteristic

  • Plate resistance

    1000000 ohm

    ClassA

  • Transconductance

    1200 uS

    ClassA

  • Grid #1 voltage for transconductance 10 uS

    -4 V

Capacitance

  • Grid-to-plate capacitance

    0.01 pF

  • Input capacitance

    3.3 pF

  • Output capacitance

    3.8 pF

Data set 06

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Application

  • Application

    RFAmplifier text

Data set 07

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Heater voltage

    1.25 V

  • Heater current

    50 mA

  • Plate voltage

    67.5 V

  • Screen voltage

    67.5 V

  • Plate current

    1.8 mA

  • Screen current

    0.48 mA

  • Transconductance

    1100 uS

  • Plate resistance

    1000000 ohm

  • Low-voltage transconductance

    820 uS

    PlateAndScreenVoltage=45V