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Voltage Radio Detector Converter ·Pentode

5636

Premium subminiature dual-control pentode for mixer, gated-amplifier, and specialized control applications in severe military and industrial environments. Independent control electrodes permit frequency conversion, gating, and gain-control functions beyond ordinary pentode amplification.

Directly heatedCold cathodeCommon cathodeDissimilar

Sections: 1
Base: 8DC
Socket code: SUBMINIATURE8
Base pins: 8
Nominal heater: 6.3 V / 150 mA

Description

Premium subminiature dual-control pentode for mixer and dual-control amplifier service in severe military/industrial environments.

Socket description

Subminiature 8-lead base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base: 8DC
Socket code: SUBMINIATURE8
Base pins: 8
Nominal heater voltage: 6.3 V
Nominal heater current: 150 mA
Parallel heater voltage: -
Parallel heater current: -
Series capable: No

8DC - Terminal pinout

Electrical assignments shared by every tube using this base designation.

Terminal	Section	Connection	Evidence
PIN1G1	A	G1 — Control Grid EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN2K	A	K — Cathode EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN3H	—	H — Heater EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN4G3	A	G3 — Suppressor Grid EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN5P	A	P — Plate (Anode) EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN6H	—	H — Heater EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN7G2	A	G2 — Screen Grid EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC
PIN8K	A	K — Cathode EIA transcription; manufacturer confirmation pending	Unverified EIA Base Connections, printed page 129, 8DC

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances

Plate resistance: 110000 Ω
Transconductance: 0.0032 S
Max plate voltage: 165 V
Max screen voltage: 155 V
Max plate dissipation: 0.55 W
Max screen dissipation: 0.45 W
Max cathode current: 16 mA

Grid-number-1 transconductance promoted as the primary transconductance; grid-number-3 transconductance and limits preserved as parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1940 RCA

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

HeaterVoltageNominal
6.3 V
Nominal
HeaterCurrentNominal
150 mA
Nominal
Maximum Plate Voltage
165 V
Maximum Screen Voltage
155 V
Maximum Plate Dissipation
1.1 W
Maximum Cathode Current
11 mA

Characteristic

Transconductance
3200 µS
Typical
Plate Resistance
110000 ohm
Typical

Data set 02

1950 Sylvania

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

Conversion transconductance
1400 uS

Data set 03

1958 Compagnie General

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Frequency Conversion Maximum
400 MHz
Grid 1 Transconductance
3200 uS
Grid 3 Transconductance
950 uS
Conversion Transconductance
1280 uS
Plate Resistance
320000 ohm

Data set 04

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Plate Voltage
100 V
GatedAmplifier;Grid3TiedToCathode
Screen Voltage
100 V
GatedAmplifier;Grid3TiedToCathode
Cathode Resistor
150 ohm
GatedAmplifier;Grid3TiedToCathode
Plate Current
5.3 mA
GatedAmplifier;Grid3TiedToCathode
Screen Current
3.6 mA
GatedAmplifier;Grid3TiedToCathode
Plate Resistance
110000 ohm
GatedAmplifier;Grid3TiedToCathode
Transconductance
3200 uS
GatedAmplifier;Grid3TiedToCathode
Plate Voltage
100 V
GatedAmplifier;Grid3Minus1V

Data set 05

1960 RCA Industrial and Communications Types

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

Cutoff characteristic
Sharp cutoff

Application

Application
Gated amplifier / delay / mixer / gain control

Other

Maximum useful frequency
400 MHz

Data set 06

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Heater voltage
6.3 V
Heater current
150 mA
Maximum positive grid #3 voltage
30 V
Maximum negative grid #4 voltage
-55 V
Maximum plate current
11 mA
Maximum grid #2 current
7 mA

Characteristic

Grid #4 transconductance
1950 uS
DualControlAmplifier;Condition1
Grid #3 transconductance
950 uS
DualControlAmplifier;Condition1
Conversion transconductance
1280 uS
Mixer

Data set 07

1963 Mullard

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

HeaterOrFilamentVoltage
6.3 V
HeaterOrFilamentCurrent
150 mA
Plate Voltage
100 V
Screen Voltage
100 V
Grid Voltage
-1.4 V
Plate Current
5.3 mA
Screen Current
4.1 mA
Transconductance
3200 uS

Data set 08

1963 Philips Electron Tubes Handbook V1

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Plate voltage
100 V
Amplifier
Screen voltage
100 V
Amplifier
Grid 3 voltage
0 V
Amplifier
Cathode resistor
150 ohm
Amplifier

Characteristic

Plate current
3.7 to 6.9 mA
NewTubeRange
Screen current
2.8 to 5.4 mA
NewTubeRange
Control-grid transconductance
2700 to 4000 uS
Grid-3 transconductance
500 uS
Plate resistance
110 kOhm

Data set 09

1963 Philips Electron Tubes Handbook V3

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Plate voltage
100 V
Amplifier
Screen voltage
100 V
Amplifier
Cathode resistor
150 Ω
Amplifier
Plate current
5.3 mA
Amplifier
Screen current
4 mA
Amplifier
Control-grid-1 transconductance
3200 µS
Section1
Control-grid-3 transconductance
500 µS
Section1
Plate resistance
110000 Ω
Section1

Other

Mixer plate current
4 mA
Mixer

Data set 10

1966 Tung Sol Electronic Tubes 3 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Plate voltage
200 V
DualControlAmplifier
Grid #2 voltage
200 V
DualControlAmplifier
Cathode resistor
150 ohm
DualControlAmplifier
Plate current
5.3 mA
DualControlAmplifier
Grid #2 current
3.6 mA
DualControlAmplifier

Characteristic

Grid #1 transconductance
3200 uS
DualControlAmplifier
Grid #3 transconductance
500 uS
DualControlAmplifier
Plate resistance
110000 ohm
DualControlAmplifier

Data set 11

1967 Mullard Receiving Tubes for Maintenance

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

Plate-to-Control-Grid Capacitance
<20 mpF
PublishedCapacitance
Plate-to-Suppressor-Grid Capacitance
<1.1 pF
PublishedCapacitance
Control-to-Suppressor-Grid Capacitance
<150 mpF
PublishedCapacitance
Input Capacitance
4 pF
PublishedCapacitance
Suppressor Input Capacitance
3.7 pF
PublishedCapacitance
Output Capacitance
3.4 pF
PublishedCapacitance

Characteristic

Plate Voltage
100 V
PublishedCharacteristics
Screen Voltage
100 V
PublishedCharacteristics

Data set 12

1968 General Electric Co

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristic

Grid-Number 3 Transconductance
950 uS

Other

Plate Current
5.3 mA
Screen Current
3.4 mA

Capacitance

Grid-1 to Plate Capacitance Maximum
0.015 pF
WithShield
Grid-3 to Plate Capacitance Maximum
1.1 pF
WithShield

CharacteristicLimit

Grid-1 Transconductance Minimum
2700 uS
Initial
Grid-1 Transconductance Maximum
4000 uS
Initial

Data set 13

1971 RCA HB3 Binder 3 of 7

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

Maximum plate voltage
- to 165 V
Maximum screen voltage
- to 155 V
Maximum plate dissipation
- to 1.1 W
Maximum screen dissipation
- to 0.7 W

Characteristics

Plate resistance
110000 Ω
Transconductance
3200 µS
Plate supply voltage
100 V
ClassA
Grid No.2 supply voltage
100 V
ClassA
Cathode resistor
150 Ω
ClassA

Data set 14

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

Typical plate voltage
100 V
Typical screen voltage
100 V
Typical cathode resistor
150 ohm
Typical plate current
5.3 mA
Typical screen current
4 mA
Transconductance
3200 uS
Plate resistance
110 kohm

Capacitance

Input capacitance
4 pF