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Voltage Radio Detector Converter ·Pentode-Triode

4GJ7

Medium-mu triode plus sharp-cutoff pentode used as a combined oscillator and mixer in television receivers.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
9QA
Socket code
B9A
Base pins
9
Nominal heater
4.3 V / 600 mA

Description

Medium-mu triode plus sharp-cutoff pentode used as a combined oscillator and mixer in television receivers.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9QA
Socket code
B9A
Base pins
9
Nominal heater voltage
4.3 V
Nominal heater current
600 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9QA - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Transconductance
0.009 S
Amplification factor
20
Max plate voltage
140 V
Max plate dissipation
1.8 W
Max cathode current
22 mA

Combination triode-pentode for television oscillator/mixer and amplifier service.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
350000 Ω
Transconductance
0.011 S
Max plate voltage
275 V
Max screen voltage
275 V
Max plate dissipation
2.4 W
Max screen dissipation
0.55 W
Max cathode current
20 mA

Combination triode-pentode for television oscillator/mixer and amplifier service.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1963 Amperex Condensed

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Plate voltage

    100 V

    TVOscillatorMixer

  • Grid voltage

    -3 V

    TVOscillatorMixer

  • Plate current

    15 mA

    TVOscillatorMixer

SECTION 2

Pentode

Other

  • Plate voltage

    170 V

    PentodeSection

  • Screen voltage

    120 V

    PentodeSection

  • Grid voltage

    -1.2 V

    PentodeSection

  • Plate current

    10 mA

    PentodeSection

  • Screen current

    3 mA

    PentodeSection

Characteristic

  • Amplification factor

    20

    PentodeSection

  • Plate resistance

    350 kOhm

    PentodeSection; greater than

Data set 02

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • For grid-resistor-bias operation*

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • # Pulse duration must not exceed 15% of a horizontal scanning cycle (

    10 microseconds

    Published in approved ECF801 target datasheet entry; Section1

  • Heater Current 4.1 5.6 6.3

    8 V

    Published in approved ECF801 target datasheet entry; Section1

  • Peak Heater-Cathode 0.6 0.45 0.41

    300 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Plate-Supply Voltage 600

    600 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Plate Voltage 140

    275 V

    Published in approved ECF801 target datasheet entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    600 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.2 Voltage

    275 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.l (Control-Grid) Voltage

    -50 V

    Published in approved ECF801 target datasheet entry; Section1

  • Cathode Current 22

    20 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Dissipation 1.8

    2.4 W

    Published in approved ECF801 target datasheet entry; Section1

  • Grid-No.2 Input*

    0.55 W

    Published in approved ECF801 target datasheet entry; Section1

  • DC Plate Voltage 100

    170 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.2 Voltage

    120 V

    Published in approved ECF801 target datasheet entry; Section1

  • DC Grid-No.l Voltage —3

    -1.2 V

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    0.35 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • receivers to

    50 V

    Published in approved ECF801 target datasheet entry; Section1

  • to

    0.5 W

    Published in approved ECF801 target datasheet entry; Section1

  • is

    0.36 W

    Published in approved ECF801 target datasheet entry; Section1

  • Heater Voltage (ac/dc) 2.3 2.8 4

    6.3 V

    Published in approved ECF801 target datasheet entry; Section1

  • Heater Current 0.6 0.45 0.3

    180 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Negative-bias value

    50 V

    Published in approved ECF801 target datasheet entry; Section1

  • Positive-bias value

    0 V

    Published in approved ECF801 target datasheet entry; Section1

  • Average Cathode Current

    22 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Dissipation

    2.5 W

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Voltage

    135 V

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage

    -1 V

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Resistance (Approx.)

    5400 Ω

    Published in approved ECF801 target datasheet entry; Section1

  • Transconductan'*.e

    15000 µS

    Published in approved ECF801 target datasheet entry; Section1

  • Plate Current

    11.5 mA

    Published in approved ECF801 target datasheet entry; Section1

Characteristic

  • Plate Current 15

    10 mA

    Published in approved ECF801 target datasheet entry; Section1

  • Grid-No.2 Current

    3 mA

    Published in approved ECF801 target datasheet entry; Section1

  • For fixed-bias operation 0.5

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • For cathode-bias operation 0.5

    2.2 MΩ

    Published in approved ECF801 target datasheet entry; Section1

  • voltage to

    100 V

    Published in approved ECF801 target datasheet entry; Section1

  • Input Resistance*

    275 Ω

    Published in approved ECF801 target datasheet entry; Section1

  • Input Capacitance*

    11.2 pF

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage (Approx.) for transconductance of

    150 µS

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage (Approx.) for transconductance of

    1500 µS

    Published in approved ECF801 target datasheet entry; Section1

  • Grid Voltage (Approx.) for transconductance of 1500 /imhos

    -2.5 V

    Published in approved ECF801 target datasheet entry; Section1

Capacitance

  • Grid to Plate

    0.62 pF

    Published in approved ECF801 target datasheet entry; Section1

  • Grid to Cathode, Heater, and Internal Shield

    5 pF

    Published in approved ECF801 target datasheet entry; Section1

  • Plate to Cathode, Heater, and Internal Shield

    3.5 pF

    Published in approved ECF801 target datasheet entry; Section1

SECTION 2

Pentode

Other

  • For grid-resistor-bias operation*

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • # Pulse duration must not exceed 15% of a horizontal scanning cycle (

    10 microseconds

    Published in approved ECF801 target datasheet entry; Section2

  • Heater Current 4.1 5.6 6.3

    8 V

    Published in approved ECF801 target datasheet entry; Section2

  • Peak Heater-Cathode 0.6 0.45 0.41

    300 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Plate-Supply Voltage 600

    600 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Plate Voltage 140

    275 V

    Published in approved ECF801 target datasheet entry; Section2

  • Grid-No.2 (Screen-Grid) Supply Voltage

    600 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.2 Voltage

    275 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.l (Control-Grid) Voltage

    -50 V

    Published in approved ECF801 target datasheet entry; Section2

  • Cathode Current 22

    20 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Dissipation 1.8

    2.4 W

    Published in approved ECF801 target datasheet entry; Section2

  • Grid-No.2 Input*

    0.55 W

    Published in approved ECF801 target datasheet entry; Section2

  • DC Plate Voltage 100

    170 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.2 Voltage

    120 V

    Published in approved ECF801 target datasheet entry; Section2

  • DC Grid-No.l Voltage —3

    -1.2 V

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    0.35 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • receivers to

    50 V

    Published in approved ECF801 target datasheet entry; Section2

  • to

    0.5 W

    Published in approved ECF801 target datasheet entry; Section2

  • is

    0.36 W

    Published in approved ECF801 target datasheet entry; Section2

  • Heater Voltage (ac/dc) 2.3 2.8 4

    6.3 V

    Published in approved ECF801 target datasheet entry; Section2

  • Heater Current 0.6 0.45 0.3

    180 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Negative-bias value

    50 V

    Published in approved ECF801 target datasheet entry; Section2

  • Positive-bias value

    0 V

    Published in approved ECF801 target datasheet entry; Section2

  • Average Cathode Current

    22 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Dissipation

    2.5 W

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Voltage

    135 V

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage

    -1 V

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Resistance (Approx.)

    5400 Ω

    Published in approved ECF801 target datasheet entry; Section2

  • Transconductan'*.e

    15000 µS

    Published in approved ECF801 target datasheet entry; Section2

  • Plate Current

    11.5 mA

    Published in approved ECF801 target datasheet entry; Section2

Characteristic

  • Plate Current 15

    10 mA

    Published in approved ECF801 target datasheet entry; Section2

  • Grid-No.2 Current

    3 mA

    Published in approved ECF801 target datasheet entry; Section2

  • For fixed-bias operation 0.5

    1 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • For cathode-bias operation 0.5

    2.2 MΩ

    Published in approved ECF801 target datasheet entry; Section2

  • voltage to

    100 V

    Published in approved ECF801 target datasheet entry; Section2

  • Input Resistance*

    275 Ω

    Published in approved ECF801 target datasheet entry; Section2

  • Input Capacitance*

    11.2 pF

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage (Approx.) for transconductance of

    150 µS

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage (Approx.) for transconductance of

    1500 µS

    Published in approved ECF801 target datasheet entry; Section2

  • Grid Voltage (Approx.) for transconductance of 1500 /imhos

    -2.5 V

    Published in approved ECF801 target datasheet entry; Section2

Capacitance

  • Grid to Plate

    0.62 pF

    Published in approved ECF801 target datasheet entry; Section2

  • Grid to Cathode, Heater, and Internal Shield

    5 pF

    Published in approved ECF801 target datasheet entry; Section2

  • Plate to Cathode, Heater, and Internal Shield

    3.5 pF

    Published in approved ECF801 target datasheet entry; Section2