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Voltage Radio Detector Converter ·Diode-Diode-Pentode

1F7GH

Directly heated double-diode pentode combining detector and control-voltage rectification with a high-resistance amplifier section. Its economical filament and low-current operation suit portable battery receiving equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
7AD
Socket code
IO
Base pins
8
Nominal heater
2 V / 60 mA

Description

Directly heated duplex-diode sharp-cutoff pentode for detector and Class A amplifier service.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
7AD
Socket code
IO
Base pins
8
Nominal heater voltage
2 V
Nominal heater current
60 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

7AD - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Detector/AVC diode section 1.

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Detector/AVC diode section 2.

Section 3

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1000000 Ω
Transconductance
0.00065 S
Max plate voltage
180 V
Max screen voltage
67.5 V
Max plate dissipation
0.4 W
Max screen dissipation
0.05 W

Pentode RF/IF amplifier section.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 3

Pentode

Other

  • Maximum plate voltage

    180 V

  • Maximum screen-grid voltage

    67.5 V

  • Plate voltage

    180 V

    ClassA

  • Screen-grid voltage

    67.5 V

    ClassA

  • Control-grid voltage

    -1.5 V

    ClassA

  • Plate current

    2.2 mA

    ClassA

  • Screen-grid current

    0.7 mA

    ClassA

  • Plate resistance

    1000000 Ohm

    ClassA

  • Transconductance

    650 uS

    ClassA

Capacitance

  • Input capacitance

    3.8 pF

  • Output capacitance

    9.5 pF

  • Grid-to-plate capacitance

    0.001 pF

Data set 02

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristic

  • MinimumDiodeCurrentAt10V

    0.5 mA

    DcApplied=10V

Other

  • MaximumDiodeCurrentContinuous

    0.25 mA

    ContinuousOperation

SECTION 2

Diode

Characteristic

  • MinimumDiodeCurrentAt10V

    0.5 mA

    DcApplied=10V

Other

  • MaximumDiodeCurrentContinuous

    0.25 mA

    ContinuousOperation

SECTION 3

Pentode

Other

  • Filament Voltage

    2 V

    Nominal

  • Filament Current

    60 mA

    Nominal

  • Plate Voltage

    180 V

    RFOrIFAmplifier

  • Screen Voltage

    67.5 V

    RFOrIFAmplifier

  • Control Grid Voltage

    -1.5 V

    RFOrIFAmplifier

  • Plate Current

    2.2 mA

    RFOrIFAmplifier

  • Screen Current

    0.7 mA

    RFOrIFAmplifier

Capacitance

  • Grid To Plate Capacitance

    0.01 pF

    Maximum

  • Input Capacitance

    3.8 pF

  • Output Capacitance

    9.5 pF

Characteristic

  • Plate Resistance

    1000000 ohm

    RFOrIFAmplifier

  • Transconductance

    650 uS

    RFOrIFAmplifier

  • TransconductanceAtControlGridMinus42V

    20 uS

    RFOrIFAmplifier