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Voltage Radio Detector Converter ·Diode-Diode-Pentode

1F6

Directly heated double-diode pentode for detector, AVC, and voltage-amplifier functions in battery receivers. Paired diodes provide signal and control rectification while the high-resistance pentode supplies subsequent gain.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
6W
Socket code
IO
Base pins
6
Nominal heater
2 V / 60 mA

Description

Directly heated duplex-diode sharp-cutoff pentode for detector and Class A amplifier service.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
6W
Socket code
IO
Base pins
6
Nominal heater voltage
2 V
Nominal heater current
60 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

6W - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances
Max plate voltage
180 V
Max cathode current
1 mA

Detector/AVC diode section 1.

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Detector/AVC diode section 2.

Section 3

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
1000000 Ω
Transconductance
0.00065 S
Amplification factor
650
Max plate voltage
180 V
Max screen voltage
67.5 V
Max plate dissipation
0.4 W
Max screen dissipation
0.05 W
Max cathode current
3 mA

Pentode RF/IF amplifier section.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1937 Raytheon Radio Receiving Tubes

Published operating points and test conditions from this source.

SECTION 3

Pentode

Capacitance

  • Grid to Plate

    0.007 pF

    Published capacitance

  • Input

    4 pF

    Published capacitance

  • Output

    9 pF

    Published capacitance

Other

  • Plate Voltage

    180 V

    ClassA

  • Screen Voltage

    67.5 V

    ClassA

  • Grid Bias

    -1.5 V

    ClassA

  • Amplification Factor {approximate

    650

    ClassA

  • Plate Resistance (approximate

    1 Mohm

    ClassA

  • Transconductance

    650 uS

    ClassA

  • Screen Current

    0.6 mA

    ClassA

  • Transconductance at

    -12 uS

    ClassA; Column1

  • Transconductance at

    15 uS

    ClassA; Column2

  • Grid Biast

    -1 V

    ClassA; Column1

  • Grid Biast

    -1.5 V

    ClassA; Column2

  • Grid Biast

    -240 V

    ClassA; Column3

  • Signal Peak Voltage

    0.64 V

    ClassA; Column1

  • Signal Peak Voltage

    0.63 V

    ClassA; Column2

  • Signal Peak Voltage

    0.62 V

    ClassA; Column3

  • No-Signal Plate Current

    0.42 mA

    ClassA; Column1

  • No-Signal Plate Current

    0.42 mA

    ClassA; Column2

  • No-Signal Plate Current

    0.42 mA

    ClassA; Column3

  • Maximum-Signal Plate Current

    0.34 mA

    ClassA; Column1

  • Maximum-Signal Plate Current

    0.34 mA

    ClassA; Column2

  • Maximum-Signal Plate Current

    0.34 mA

    ClassA; Column3

Data set 02

1940 RCA

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

  • HeaterVoltageNominal

    2 V

    Nominal

  • HeaterCurrentNominal

    60 mA

    Nominal

  • Maximum Plate Voltage

    180 V

  • Maximum Cathode Current

    1 mA

SECTION 3

Pentode

Other

  • HeaterVoltageNominal

    2 V

    Nominal

  • HeaterCurrentNominal

    60 mA

    Nominal

  • Maximum Plate Voltage

    180 V

  • Maximum Screen Voltage

    67.5 V

  • Maximum Cathode Current

    3 mA

Characteristic

  • Transconductance

    659 µS

    Typical

  • Amplification Factor

    650

    Typical

  • Plate Resistance

    1000000 ohm

    Typical

Data set 03

1950 Sylvania

Published operating points and test conditions from this source.

SECTION 3

Pentode

Other

  • Plate Voltage

    180 V

    Pentode; RF/IF

  • Screen Voltage

    67.5 V

    Pentode; RF/IF

  • Plate Current

    2.2 mA

    Pentode; RF/IF

Capacitance

  • Grid-to-Plate Capacitance

    0.007 pF

    Pentode

Data set 04

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 3

Pentode

Other

  • Maximum plate voltage

    180 V

  • Maximum screen-grid voltage

    67.5 V

  • Plate voltage

    180 V

    ClassA

  • Screen-grid voltage

    67.5 V

    ClassA

  • Control-grid voltage

    -1.5 V

    ClassA

  • Plate current

    2.2 mA

    ClassA

  • Screen-grid current

    0.7 mA

    ClassA

  • Plate resistance

    1000000 Ohm

    ClassA

  • Transconductance

    650 uS

    ClassA

Capacitance

  • Input capacitance

    4 pF

  • Output capacitance

    9 pF

  • Grid-to-plate capacitance

    0.007 pF

Data set 05

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Diode

Characteristic

  • MinimumDiodeCurrentAt10V

    0.5 mA

    DcApplied=10V

Other

  • MaximumDiodeCurrentContinuous

    0.25 mA

    ContinuousOperation

SECTION 2

Diode

Characteristic

  • MinimumDiodeCurrentAt10V

    0.5 mA

    DcApplied=10V

Other

  • MaximumDiodeCurrentContinuous

    0.25 mA

    ContinuousOperation

SECTION 3

Pentode

Other

  • Filament Voltage

    2 V

    Nominal

  • Filament Current

    60 mA

    Nominal

  • Plate Voltage

    180 V

    RFOrIFAmplifier

  • Screen Voltage

    67.5 V

    RFOrIFAmplifier

  • Control Grid Voltage

    -1.5 V

    RFOrIFAmplifier

  • Plate Current

    2.2 mA

    RFOrIFAmplifier

  • Screen Current

    0.7 mA

    RFOrIFAmplifier

Capacitance

  • Grid To Plate Capacitance

    0.007 pF

    Maximum

  • Input Capacitance

    4 pF

  • Output Capacitance

    9 pF

Characteristic

  • Plate Resistance

    1000000 ohm

    RFOrIFAmplifier

  • Transconductance

    650 uS

    RFOrIFAmplifier

  • TransconductanceAtControlGridMinus42V

    20 uS

    RFOrIFAmplifier