Skip to main content

Voltage Pentode or Tetrode (under 100V) ·Heptode

1AE5

Battery or receiving-tube frequency converter combining local-oscillator and mixer action for superheterodyne radio service. Its multi-grid structure provides frequency conversion while minimizing component count and, in battery types, filament power.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
1AE5
Socket code
B7G
Base pins
7
Nominal heater
1.25 V / 60 mA

Description

1AE5 — Subminiature Heptode Mixer Tube

Overview

The 1AE5 is a subminiature heptode vacuum tube designed primarily for mixer service in low-power and portable applications. Featuring a filamentary cathode (DC) and a compact flat-press subminiature construction, the 1AE5 operates at low electrode voltages, making it highly suitable for battery-operated equipment. Its electrode configuration includes a dedicated signal-input grid (Grid 3) and combined screen grids (Grids 2 and 4) to facilitate efficient frequency conversion.

Mechanical Construction and Pinout

The 1AE5 is built in a subminiature envelope with a flat-press structure. Its physical dimensions are highly compact, with a maximum overall length of 1.5 inches, a maximum width of 0.385 inches, and a maximum thickness of 0.300 inches. The tube utilizes a T-X outline drawing and a 6A terminal connection (also designated as the 1AE5 base connection).

The base connection features an inline, seven-pin arrangement. When viewed from left to right, the pinout configuration is as follows:

Pin NumberConnectionFunction
Pin 1F-Filament Negative
Pin 2G1Grid 1 (Oscillator/Injection Grid)
Pin 3G2, G4Screen Grids
Pin 4G3Grid 3 (Signal-Input Grid)
Pin 5G2, G4Screen Grids
Pin 6PPlate
Pin 7F+Filament Positive

In this heptode structure, Grids 2 and 4 are internally connected and function together as the screen grid, while Grid 3 serves specifically as the signal-input grid.

Filament Ratings

The 1AE5 features a directly heated filamentary cathode designed for low-voltage DC operation. The filament ratings are optimized for battery efficiency:

  • Filament Voltage: 1.25 V DC
  • Filament Current: 60 mA (0.06 A)
  • Filament Type: Filamentary Cathode (DC)

Maximum Ratings

To ensure reliable operation and prevent damage to the subminiature structure, the operating voltages of the 1AE5 must be kept within its maximum limits:

  • Maximum Plate Voltage: 45 V
  • Maximum Screen Voltage (Grids 2 and 4): 45 V

Typical Operation and Characteristics in Mixer Service

Under typical operating conditions as a heptode mixer, the 1AE5 is configured with low supply voltages and specific grid injection parameters. The typical operating point and resulting electrical characteristics are detailed below:

Operating Voltages and Currents

  • Plate Voltage: 45 V
  • Screen Voltage (Grids 2 and 4): 45 V
  • Grid 3 (Signal-Input Grid) Voltage: 0 V
  • Plate Current: 0.9 mA
  • Screen Current (Grids 2 and 4): 2.0 mA

Oscillator and Injection Conditions

For proper mixer operation, the local oscillator signal is injected into Grid 1. The typical injection parameters are:

  • Grid 1 Resistance (Rg1R_{g1}): 200,000 Ω\Omega (0.2 MΩ\Omega)
  • Grid 1 Injection Current (Ig1I_{g1}): 15 μ\muA

Electrical Characteristics

  • Plate Resistance (RpR_p): Approximately 200,000 Ω\Omega (0.2 MΩ\Omega)
  • Conversion Transconductance (GcG_c): 200 μ\mumhos

The low conversion transconductance of 200 μ\mumhos is typical for subminiature heptodes operating at these very low plate and screen potentials, balancing conversion efficiency with minimal current drain.

Technical Summary

The 1AE5 is a subminiature heptode mixer featuring a directly heated 1.25 V, 60 mA filamentary cathode. Housed in a compact T-X flat-press envelope with a 7-pin inline base, it is optimized for low-voltage portable applications. With maximum plate and screen ratings of 45 V, the tube typically operates at 45 V on both the plate and screens, drawing a total cathode current of under 3 mA (0.9 mA plate current and 2.0 mA screen current). Under these conditions, with a Grid 1 injection current of 15 μ\muA through a 200,000 Ω\Omega resistor, it provides a conversion transconductance of 200 μ\mumhos and an approximate plate resistance of 200,000 Ω\Omega.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
1AE5
Socket code
B7G
Base pins
7
Nominal heater voltage
1.25 V
Nominal heater current
60 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

1AE5 - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Heptode

X-ray radiationInterelectrode capacitances
Plate resistance
200000 Ω
Transconductance
0.0002 S
Max plate voltage
45 V
Max screen voltage
45 V

Heptode mixer. Transconductance is conversion transconductance.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Plate voltage

    45 V

    Converter

  • Screen voltage

    45 V

    Converter

  • Grid voltage

    0 V

    Converter

  • Plate current

    0.9 mA

    Converter

  • Screen current

    2 mA

    Converter

  • Injection-grid current

    15 uA

    Mixer

  • Injection-grid resistor

    200000 ohm

    Mixer

Data set 02

195X Raytheon Special Purpose Tubes

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Plate voltage

    45 V

  • Grid 1 return resistance

    0.2 megohm

  • Grid 2 voltage

    45 V

  • Grid 3 voltage

    0 V

  • Plate current

    0.9 mA

  • Grid 2 current

    2 mA

Characteristic

  • Plate resistance

    200000 ohm

  • Transconductance

    200 uS