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Voltage Pentode or Tetrode (under 100V) ·Pentode

1AD4

Directly heated subminiature sharp-cutoff pentode for AF and RF voltage amplification in compact battery-powered equipment.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
1AD4
Socket code
SUBMINIATURE7
Base pins
7
Nominal heater
1.25 V / 100 mA

Description

1AD4 — Sharp-Cutoff Subminiature Pentode

A directly heated, fully shielded subminiature pentode designed for radio-frequency (RF) and audio-frequency (AF) amplification in battery-operated and portable electronic equipment.

Overview

The 1AD4 (also designated as the DF 62) is a subminiature sharp-cutoff pentode featuring a directly heated filament. It is specifically engineered for low-power, portable, and battery-operated applications, serving as an RF or AF amplifier. The tube is constructed with a fully shielded glass envelope and flexible leads, allowing it to be soldered directly into circuits or used with standard inline subminiature sockets.

With a nominal filament supply of 1.25 V at 100 mA, the 1AD4 provides efficient operation from single-cell batteries. Its design incorporates a built-in metallic shield and a dual-plate suppressor grid configuration to optimize high-frequency performance and minimize interelectrode coupling.

Construction, Physical Dimensions, and Installation

The 1AD4 is housed in a subminiature glass envelope (such as the T-2x3 or A 7x 10.1 outline) with a flat-press base. The bulb is entirely coated with a conductive metallic shield to provide built-in electrical shielding.

Physical Dimensions

  • Maximum Body Length: 38.1 mm (1.5 in.)
  • Maximum Width: 9.78 mm (0.385 in.)
  • Maximum Thickness / Diameter: 7.24 mm (0.285 in.)
  • Minimum Lead Length: 38.1 mm (1.5 in.)

Installation Precautions

The 1AD4 features five flexible, tinned leads (0.016-inch diameter) spaced 0.048 inches center-to-center. These leads can be soldered or welded directly to circuit components. When soldering, great care must be taken to avoid overheating the glass-to-metal seal. Additionally, leads should not be bent closer than 2 mm from the glass-to-metal seal to prevent mechanical stress and potential envelope failure. The tube can be mounted in any position.

Suppressor Grid and Shielding Configuration

The suppressor grid (Grid 3) consists of two separate plates. To optimize shielding and electron flow, one plate is internally connected to the negative filament terminal (which also connects to the external conductive envelope coating), while the other plate is connected to the positive filament terminal.

Pinout and Terminal Connections

Depending on the manufacturer and the specific standard applied (such as the 5A or 7L7 base configurations), two distinct pinout arrangements exist for the 1AD4. In both configurations, a red or colored dot on the glass envelope indicates the position of Lead 1.

Standard Configuration (DF 62 / 1AD4)

In this layout, the leads are arranged in-line from 1 to 5:

  • Lead 1: Anode (Plate) — indicated by the red dot
  • Lead 2: Grid 2 (Screen Grid)
  • Lead 3: Negative Filament (−f-f), Suppressor Grid (Grid 3 plate), and Conductive Shield Coating
  • Lead 4: Grid 1 (Control Grid)
  • Lead 5: Positive Filament (+f+f) and Suppressor Grid (Grid 3 plate)

Alternative Configuration (5-Lead Flat-Press)

An alternative terminal connection scheme is documented for certain subminiature flat-press versions:

  • Lead 1: Negative Filament (−f-f)
  • Lead 2: Grid 1 (Control Grid)
  • Lead 3: Grid 2 (Screen Grid)
  • Lead 4: Grid 3 (Suppressor Grid)
  • Lead 5: Plate (Anode)

Filament Ratings

The 1AD4 utilizes a directly heated filament designed for DC operation. The filament can be operated in parallel supply configurations.

Filament ParameterValue
Nominal Filament Voltage (VfV_f)1.25 V DC
Nominal Filament Current (IfI_f)100 mA (0.1 A)
Absolute Minimum Filament Voltage1.00 V
Absolute Maximum Filament Voltage1.50 V (or 1.25 V ± 20%)

Electrical Characteristics and Operating Points

The 1AD4 operates as a Class A (or Class A1) amplifier. It exhibits high transconductance and high plate resistance at low operating voltages. The published typical operating conditions are divided into 45 V and 90 V regimes:

Typical Operating Conditions

Parameter45 V Operating Point90 V Operating Point
Anode Voltage (VaV_a)45 V90 V
Grid 2 Voltage (V[g2](/tubes/G2)V_{[g2](/tubes/G2)})45 V90 V
Grid 1 Voltage (Vg1V_{g1})0 V-1.6 V
Grid 1 Series Resistor (Rg1R_{g1})2 MΩ—
Anode Current (IaI_a)2.8 mA to 3.3 mA5.7 mA
Grid 2 Current (I[g2](/tubes/G2)I_{[g2](/tubes/G2)})0.8 mA to 0.9 mA1.5 mA
Plate Resistance (RpR_p)0.4 MΩ to 0.5 MΩ (200 kΩ min)0.5 MΩ
Transconductance (gmg_m)2000 µmhos to 2200 µmhos (2.0 to 2.2 mA/V)2600 µmhos (2.6 mA/V)
Amplification Factor (μg2g1\mu_{g2g1})17.518
Grid Bias for Cut-off-3.5 V to -3.8 V (at gm=10g_m = 10 µmhos)-7.0 V (at gm=10g_m = 10 µmhos)

Maximum Ratings

The maximum ratings of the 1AD4 vary depending on the rating system applied (Absolute Maximum Rating System vs. Design Centre Rating System) and the specific manufacturer specifications.

ParameterAbsolute Maximum (Low Limit)Absolute Maximum (High Limit)Design Centre Limit
Anode Voltage (VaV_a)45 V100 V90 V
Grid 2 Voltage (V[g2](/tubes/G2)V_{[g2](/tubes/G2)})45 V100 V90 V
Anode Dissipation (WaW_a)—0.3 W0.55 W
Grid 2 Dissipation (W[g2](/tubes/G2)W_{[g2](/tubes/G2)})—0.1 W0.2 W
Total Cathode Current (IkI_k)—5.5 mA to 7.0 mA8.5 mA
Grid 1 Circuit Resistance (Rg1R_{g1})—2 MΩ2 MΩ
Maximum Operating Altitude—3000 m (without pressurization)—

Note on Voltage Limits: Under certain military specifications (such as MIL-E-1B), standard clauses permitting maximum plate and screen voltage ratings to be exceeded are explicitly designated as non-applicable to the 1AD4.

Interelectrode Capacitances

The direct interelectrode capacitances of the 1AD4 depend on whether an external shield is utilized. The internal conductive coating connected to Lead 3 provides significant shielding when grounded.

  • With External Shield / Grounded Conductive Coating:
    • Input Capacitance (CinC_{in}): 4.0 pF
    • Output Capacitance (CoutC_{out}): 4.0 pF
    • Grid 1 to Anode (Cg1/aC_{g1/a}): < 0.01 pF (10 mpF max)
  • Without External Shield:
    • Input Capacitance (CinC_{in}): 4.5 pF
    • Output Capacitance (CoutC_{out}): 4.5 pF
    • Grid 1 to Anode (Cg1/aC_{g1/a}): 0.01 pF

Qualitative Curve Observations

Transfer Characteristics

At an operating voltage of Va=V[g2](/tubes/G2)=45 VV_a = V_{[g2](/tubes/G2)} = 45\text{ V}, the transfer curves show a smooth, continuous reduction of transconductance (gmg_m), anode current (IaI_a), and screen current (I[g2](/tubes/G2)I_{[g2](/tubes/G2)}) as the grid bias (Vg1V_{g1}) sweeps from 0 V0\text{ V} down to −4 V-4\text{ V}. The sharp-cutoff behavior is clearly defined, with the tube reaching near-complete cutoff around −3.5 V-3.5\text{ V} to −4.0 V-4.0\text{ V}.

Plate Characteristics (Pentode Connection)

The pentode plate curves (plotted up to 140 V with V[g2](/tubes/G2)=45 VV_{[g2](/tubes/G2)} = 45\text{ V}) display typical pentode knee behavior occurring below 15 V15\text{ V} of anode voltage. Above this knee, the plate current curves (IbI_b) form flat plateaus extending up to 120 V120\text{ V} and higher, for grid biases ranging from 0 V0\text{ V} down to −2.5 V-2.5\text{ V}, as well as positive grid biases up to +5 V+5\text{ V}. The screen current (I[g2](/tubes/G2)I_{[g2](/tubes/G2)}) decreases as the plate voltage increases, which is characteristic of partition noise and current distribution changes between the screen grid and anode at low plate potentials.

Plate Characteristics (Triode Connection)

When triode-connected, the average plate characteristics show typical triode behavior. The plate current increases smoothly with rising plate voltage, reaching up to 6.0 mA at a filament voltage of 1.25 V DC, as the grid voltage (V[c1](/tubes/C1)V_{[c1](/tubes/C1)}) is stepped from 0 V0\text{ V} down to −8.0 V-8.0\text{ V}.

Technical Summary

The 1AD4 (DF 62) is a subminiature, directly heated sharp-cutoff pentode designed for low-voltage RF and AF amplification in portable, battery-powered equipment. Operating with a 1.25 V, 100 mA filament, it delivers a transconductance of 2000 µmhos to 2200 µmhos at a typical plate and screen potential of 45 V, which rises to 2600 µmhos at 90 V.

Its physical construction features a fully shielded glass envelope with a conductive coating connected to the negative filament, and a suppressor grid split into two plates connected across the filament supply. With its flexible leads, the 1AD4 can be soldered directly into compact assemblies, offering reliable high-frequency performance, low interelectrode capacitance (grid-to-plate capacitance <0.01 pF< 0.01\text{ pF}), and sharp-cutoff characteristics.

Socket description

Subminiature 7-lead base

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
1AD4
Socket code
SUBMINIATURE7
Base pins
7
Nominal heater voltage
1.25 V
Nominal heater current
100 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

1AD4 - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Transconductance
0.0026 S
Amplification factor
18
Max plate voltage
90 V
Max screen voltage
90 V
Max plate dissipation
0.55 W
Max screen dissipation
0.2 W
Max cathode current
8.5 mA

Fully shielded directly heated sharp-cutoff RF pentode for battery-operated equipment; supplied sheet explicitly co-designates DF62/1AD4.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1938 Raytheon

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Filament Voltage (dc)

    54321 volts

    Filament Voltage (dc) 1.25£ 20% volts 54321

  • Plate Voltage

    100 volts

    Plate Voltage 100 volts

  • Grid #

    100 volts

    Grid #2 Voltage 100 volts

  • Plate Dissipation

    0.3 watt

    Plate Dissipation 0.3 watt

  • Grid #

    0.1 watt

    Grid #2 Dissipation 0.1 watt

  • Total Cathode Current

    5.5 ma

    Total Cathode Current 5.5 ma.

Characteristics

  • Filament Voltage (dc)

    1.25 volts

    Filament Voltage (dc) 1.25 volts

  • Filament Current

    0.1 amps

    Filament Current 0.10 amps.

  • Plate Voltage

    45 volts

    Plate Voltage 45 volts

  • Grid #

    45 volts

    Grid #2 Voltage 45 volts

  • Grid #

    0 volts

    Grid #1 Voltage @ 0 volts

  • Plate Resistance (approx.)

    0.5 meg

    Plate Resistance (approx.) 0.5 meg.

  • Transconductance

    0 pmhos

    Transconductance 2G00 pmhos

  • Plate Current

    3 ma

    Plate Current 3.0 ‘ma.

  • Grid #

    0.9 ma

    Grid #2 Current 0.9 ma.

  • Grid #

    2.5 umhos

    Grid #1 Voltage (approx.) for Gm= 10 umhos 2.5 volts

  • Ef=

    1.25 Vdc

    Ef=1.25 Vdc

Data set 02

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Input capacitance

    4.5 pF

  • Output capacitance

    4.5 pF

  • Grid-to-plate capacitance

    0.01 pF

Other

  • Plate voltage

    45 V

    ClassA

  • Screen voltage

    45 V

    ClassA

  • Grid resistor

    2 Mohm

    ClassA

  • Plate current

    3 mA

    ClassA

  • Screen current

    0.8 mA

    ClassA

Data set 03

195X Raytheon Special Purpose Tubes

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate voltage

    45 V

  • Grid 1 return resistance

    2 megohm

  • Grid 2 voltage

    45 V

  • Plate current

    2.8 mA

  • Grid 2 current

    0.8 mA

Characteristic

  • Plate resistance

    500000 ohm

  • Transconductance

    2000 uS

Data set 04

1963 Philips Electron Tubes Handbook V1

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Grid-to-plate capacitance

    - to 0.01 pF

  • Plate capacitance

    4 pF

  • Control-grid capacitance

    4 pF

Other

  • Plate voltage

    90 V

    RF amplifier

  • Screen voltage

    90 V

    RF amplifier

  • Plate current

    5.7 mA

    RF amplifier

  • Screen current

    1.5 mA

    RF amplifier

Characteristic

  • Transconductance

    2600 uS

  • Plate resistance

    0.5 Mohm

  • Cutoff grid voltage

    -7 V

    S=10uA/V

Data set 05

1968 Mazda Belvu

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Plate Current

    3 mA

    Plate 45 V;Screen 45 V

Data set 06

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Pentode

Capacitance

  • Plate-grid capacitance maximum

    0.01 pF

  • Input capacitance

    4 pF

Characteristics

  • Plate voltage

    45 V

  • Screen voltage

    45 V

  • Plate current

    3.3 mA

  • Screen current

    0.9 mA

  • Transconductance

    2200 uS

  • Plate resistance

    0.4 Mohm

  • Screen-grid amplification factor

    17.5