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Voltage Pentode or Tetrode (under 100V) ·Heptode

1AC6

Battery or receiving-tube frequency converter combining local-oscillator and mixer action for superheterodyne radio service. Its multi-grid structure provides frequency conversion while minimizing component count and, in battery types, filament power.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
7DH
Socket code
B7G
Base pins
7
Nominal heater
1.4 V / 50 mA

Description

1AC6 — Miniature Battery Heptode Frequency Changer

A directly heated, seven-pin miniature heptode designed for frequency conversion in battery-operated receivers, offering high conversion conductance, low oscillator drive requirements, and automatic volume control (AVC) capability.

Overview

The 1AC6 (also designated as the DK92) is a directly heated heptode, or pentagrid converter, designed primarily for use as a self-oscillating frequency changer in portable, battery-operated radio receivers. It is engineered to operate uniformly at frequencies up to 30 MHz.

Compared to older types such as the 1R5, the 1AC6 features improved short-wave performance and reduced high-tension (H.T.) current consumption. A key design feature is the provision of separate external connections for the oscillator anode (Grid 2) and the screen grid (Grid 4). This separation allows the implementation of conventional oscillator circuits and yields significantly improved oscillator stability and performance.

Physical Characteristics and Pinout

The 1AC6 is constructed in a miniature glass envelope (T5 1/2 bulb) with a standard 7-pin miniature button base (B7G). The tube is designed to operate in any mounting position.

Physical Dimensions

  • Maximum Overall Length: 54.5 mm (2-1/8 inches)
  • Maximum Seated Height: 47.5 mm (1-7/8 inches)
  • Bulb Length (excluding tip): 1-1/2 inches ± 3/32 inch
  • Maximum Diameter: 19 mm (3/4 inch)

Base Connections

Two distinct pinout configurations are specified for the 1AC6, both utilizing the 7-pin miniature base.

Standard B7G Configuration

In the standard configuration, the electrodes are mapped to the seven pins as follows (viewed from the underside of the base):

PinConnectionDescription
1f- / g5Filament negative / Grid 5 (Suppressor Grid)
2aAnode (Plate)
3g2Oscillator Anode (Grid 2)
4g1Oscillator Grid
5g4Screen Grid (Grid 4)
6g3Control Grid / RF Input (Grid 3)
7f+ / g5Filament positive / Grid 5 (Suppressor Grid)

Alternative 7DH Configuration

An alternative configuration (designated under the JETEC 7DH scheme) maps the pins as follows:

PinConnectionDescription
1F- / G5Filament negative / Grid 5
2PPlate (Anode)
3G2, G4Screen Grids (Grids 2 and 4 connected internally)
4G1Oscillator Grid
5G3Signal-Input Grid (Control Grid)
6—No connection
7F+Filament positive

Filament and Power Ratings

The 1AC6 features a directly heated, coated filament designed strictly for DC operation. The filament is highly efficient, minimizing current drain on portable battery supplies.

ParameterValue
Nominal Filament Voltage1.4 V DC
Filament Voltage Limits1.1 V (minimum) to 1.6 V (maximum)
Nominal Filament Current50 mA (0.05 A)

Maximum Ratings (Design Center Values)

To ensure reliable operation and prevent premature degradation, the operating conditions must be kept within the following absolute and design-center limits:

ParameterMaximum Rating
Battery Voltage90 V (Absolute maximum: 110 V)
H.T. Supply Voltage120 V
Anode (Plate) Voltage90 V
Anode (Plate) Dissipation0.15 W
Screen Grid (Grid 4) Voltage90 V
Screen Grid (Grid 4) Dissipation0.03 W
Oscillator Anode (Grid 2) Voltage60 V
Oscillator Anode (Grid 2) Dissipation0.2 W
Cathode Current4.0 mA
Grid 3 Circuit Resistance (Rg3-f)3.0 MΩ
Grid 1 Circuit Resistance (Rg1-f)35 kΩ

Electrical Characteristics and Operating Points

The 1AC6 is typically operated as a self-oscillating frequency changer. Two primary operating points are specified, corresponding to nominal battery supply voltages of 67.5 V and 90 V (reduced by the negative bias of the receiver's output stage).

Typical Operating Conditions (Converter Service)

ParameterOperating Point A (67.5 V Supply)Operating Point B (90 V Supply)
Anode Voltage (Va)63.5 V85 V
Screen Grid (g4) Voltage63.5 V60 V
Screen Feed Resistor (Rg4)0 Ω180 kΩ
Control Grid (g3) Voltage0 V0 V
Oscillator Anode (g2) Voltage30 V30 V
Oscillator Anode Feed Resistor (Rg2)22 kΩ33 kΩ
Oscillator Grid Resistor (Rg1)*27 kΩ27 kΩ
Oscillator Grid AC Voltage4 V rms4 V rms
Anode Current (Ia)0.70 mA0.65 to 0.70 mA
Screen Grid Current (Ig4)0.15 mA0.14 to 0.15 mA
Oscillator Anode Current (Ig2)1.55 mA1.60 to 1.65 mA
Oscillator Grid Current (Ig1)130 µA100 to 130 µA
Total Cathode Current (Ik)2.5 mA2.55 to 2.60 mA
Conversion Conductance (gc)300 µA/V325 µA/V
Plate Resistance (rp)~0.9 MΩ0.65 to 1.0 MΩ
Control Grid Bias for Cutoff**-4 V (for gc = 3.0 µA/V)-6 V (for gc = 3.25 µA/V)

Oscillator Section Characteristics

The characteristics of the oscillator portion of the heptode can be evaluated independently by connecting Grid 1 to the positive filament. Under these conditions, the mutual conductance and amplification factor of the oscillator triode section (Grid 1 acting as control grid, Grid 2 acting as anode) are as follows:

ParameterCondition A (63.5 V Plate)Condition B (85 V Plate)
Plate Voltage63.5 V85 V
Grid 4 Voltage63.5 V60 V
Grid 3 Voltage0 V0 V
Grid 2 Voltage30 V30 V
Grid 2 Current2.2 mA2.5 mA
Mutual Conductance (gg1-g2)800 µA/V (0.8 mA/V)900 µA/V (0.9 mA/V)
Inner Amplification Factor (µg1-g2)7.57.5

Interelectrode Capacitances

Interelectrode capacitances are measured without an external shield. The direct capacitances between the various electrodes are detailed below:

  • R.F. Input (cg3-all): 7.5 pF
  • I.F. Output (ca-all): 8.4 to 8.5 pF
  • Oscillator Input (cg1-all): 3.9 to 4.0 pF
  • Oscillator Output (cg2-all): 4.8 to 5.0 pF
  • Grid 1 to Grid 2 (cg1-g2): 3.0 pF
  • Grid 2 to Grid 3 (cg2-g3): 1.6 pF
  • Grid 1 to Grid 3 (cg1-g3): 0.2 pF (maximum)
  • Grid 3 to Anode (cg3-a): 0.36 to 0.4 pF (maximum)
  • Plate to Grid 1 (ca-g1): 0.11 pF (maximum)
  • Plate to Grid 2 (ca-g2): 0.3 pF (maximum)

Performance Curves and Behavior

The performance of the 1AC6 is highly dependent on the oscillator drive and the control grid bias. Analysis of the characteristic curves reveals several key operational behaviors:

Conversion Conductance and Noise vs. Oscillator Grid Current

  • Conversion Conductance (gc): At a supply voltage of 85 V, gc rises rapidly from zero when there is no oscillator grid current (Ig1 = 0). It reaches a broad peak of approximately 325 to 330 µA/V when Ig1 is between 100 µA and 200 µA. As the grid current increases further toward 350 µA, the conversion conductance gradually declines to approximately 230 µA/V.
  • Equivalent Noise Resistance (Req): The equivalent noise resistance of the converter stage reaches its minimum value of approximately 40 kΩ when the oscillator grid current is optimized near 150 µA.
  • Anode Impedance (ra): The internal plate resistance drops continuously as oscillator drive increases, falling from 2.5 MΩ at low grid currents down to 0.6 MΩ when Ig1 reaches 300 µA.
  • Current Consumption: Both the total cathode current (Ik) and the oscillator anode current (Ig2) rise steadily with increasing oscillator grid current. The cathode current plateaus at approximately 3.1 mA for Ig1 values exceeding 150 µA.

Characteristics vs. Control Grid Bias (Vg3)

  • AVC Control and Cutoff: Applying a negative bias to Grid 3 (Vg3) provides effective automatic volume control. As Vg3 is swept from 0 V to -6 V, the conversion conductance drops exponentially from 325 µA/V to approximately 3 µA/V. The exact cutoff point is sensitive to the screen grid (Grid 4) voltage; higher screen voltages shift the cutoff point more negative (ranging from -2 V to -7 V as Grid 4 varies from 30 V to 90 V).
  • Electrode Currents: Both the anode current (Ia) and the screen grid current (Ig4) decrease exponentially toward zero as Grid 3 bias approaches -6 V. Conversely, the oscillator anode current (Ig2) increases from 1.6 mA to 3.0 mA over the same bias range, reflecting a redistribution of space charge within the tube.
  • Anode Impedance: As Grid 3 becomes more negative, the anode impedance increases dramatically, rising from its nominal 0.65 MΩ to over 100 MΩ at -6 V bias.

Performance vs. Oscillator Voltage

When operating from an 85 V supply, the conversion conductance peaks broadly when the oscillator grid receives an AC drive voltage between 4 V and 5 V rms. Within this region, Grid 1 current increases linearly with the applied oscillator voltage, while the plate resistance rises gradually from 0.8 MΩ to 1.2 MΩ across an oscillator drive range of 0 V to 8 V rms.

Socket description

Miniature 7-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
7DH
Socket code
B7G
Base pins
7
Nominal heater voltage
1.4 V
Nominal heater current
50 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

7DH - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Heptode

X-ray radiationInterelectrode capacitances
Plate resistance
900000 Ω
Transconductance
0.0003 S
Max plate voltage
90 V
Max screen voltage
90 V
Max plate dissipation
0.15 W
Max cathode current
4 mA

Pentagrid converter. Transconductance is conversion transconductance.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1958 Brimar Radio Valve No 7

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Plate Voltage

    85 V

  • Plate Current

    0.7 mA

  • Screen Voltage

    60 V

  • Screen Current

    0.15 mA

  • Oscillator Anode Voltage

    30 V

  • Oscillator Anode Current

    1.6 mA

Characteristic

  • Conversion Conductance

    325 µS

  • Plate Resistance

    650000 ohm

  • Operating Frequency Maximum

    30 MHz

Data set 02

195X General Electric Essential Characteristics

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Plate voltage

    63.5 V

    Converter

  • Screen voltage

    63.5 V

    Converter

  • Grid voltage

    0 V

    Converter

  • Plate current

    0.7 mA

    Converter

  • Screen current

    0.15 mA

    Converter

  • Oscillator current

    0.13 mA

    Converter

  • Oscillator grid resistor

    27000 ohm

    Converter

  • Oscillator plate voltage

    30 V

    Converter

  • Oscillator plate series resistor

    22000 ohm

    Converter

  • Oscillator plate current

    1.55 mA

    Converter

Data set 03

1961 Ferranti Technical Handbook

Published operating points and test conditions from this source.

SECTION 1

Heptode

Application

  • Application

    Battery frequency changer

Other

  • Oscillator anode voltage maximum

    60 V

  • Oscillator grid voltage

    4 V

Data set 04

1999 Philips 0-D

Published operating points and test conditions from this source.

SECTION 1

Heptode

Characteristic

  • Filament voltage

    1.4 V

    Filament voltage 1.4 volts

  • Filament current

    50 mA

    Filament current 50 m amps

  • Plate to all other electrodes

    8.4 pF

    Plate to all other electrodes 8.4 uuF

  • Grid No.1 to all other electrodes

    3.9 pF

    Grid No.1 to all other electrodes 3.9 uuF

  • Battery voltage

    90 V

    Battery voltage 90 volts')

  • Plate voltage

    80 V

    Plate voltage 80 volts

  • Plate dissipation

    0.15 watt

    Plate dissipation 0.15 watt

  • Grid No

    4 V

    Grid No.4 voltage 90 volts

  • Grid No

    90 V

    Grid No.4 voltage 90 volts

  • Grid No.4 dissipation

    0.03 watt

    Grid No.4 dissipation 0,03 watt

  • Grid No

    2 V

    Grid No.2 voltage 60 volts

  • Grid No

    60 V

    Grid No.2 voltage 60 volts

  • Grid No.2 dissipation

    0.2 watt

    Grid No.2 dissipation 0.2 watt

  • Cathode current

    4 mA

    Cathode current 4 ma

  • Grid No

    3 c

    Grid No.3 circuit resistance 3 megohms

  • Grid No

    3 megohms

    Grid No.3 circuit resistance 3 megohms

  • Grid No.?! voltage at grid No.1

    0.2 V

    Grid No.?! voltage at grid No.1 0.2 volt

  • Filament voltage min

    1 V

    Filament voltage min. 1 volts

  • (grid No

    1 c

    (grid No.1 connected to +filament)

  • Plate voltage 63.5

    85 V

    Plate voltage 63.5 85 volts

  • Grid No

    3 V

    Grid No.3 voltage 0 0 volt

  • Grid No

    0 V

    Grid No.3 voltage 0 0 volt

  • Grid No

    30 V

    Grid No.2 voltage 30 30 volts

  • Grid No

    2 c

    Grid No.2 current 2.2 2.5 ma

  • Grid No

    2.5 mA

    Grid No.2 current 2.2 2.5 ma

  • No

    1 w

    No.1 with respect to grid 800 900 micromhos

  • No

    900 µS

    No.1 with respect to grid 800 900 micromhos

  • grid No

    2 w

    grid No. 2 with respeoct Te5 T.5

  • Anode voltage 1 63.5

    85 V

    Anode voltage 1 63.5 85 volts

  • | Grid No

    4 V

    | Grid No.4 voltage 63.5 60 volts

  • | Grid No

    60 V

    | Grid No.4 voltage 63.5 60 volts

  • Grid No.4 resistor 0

    0.18 megohm

    Grid No.4 resistor 0 0.18 megohm

  • Grid No.2 resistor 22,000

    33 ohms

    Grid No.2 resistor 22,000 33,000 ohms

  • Grid No

    1 A

    Grid No.1 A.C.voltage 4 volts,rms

  • Grid No.1 resistor 27,000

    27 ohms

    Grid No.1 resistor 27,000 27,000 ohms ©)

  • Plate current 0.70

    0.65 mA

    Plate current 0.70 0.65 ma

  • Grid No

    4 c

    Grid No.4 current 0.15 0.14 ma

  • Grid No

    0.14 mA

    Grid No.4 current 0.15 0.14 ma

  • Grid No

    1.65 mA

    Grid No.2 current 1.55 1.65 ma

  • Grid No

    130 pa

    Grid No.1 current 130 130 pamp

  • Cathode current 2.5

    2.6 mA

    Cathode current 2.5 2.6 ma

  • Conversion conductance 300

    325 µS

    Conversion conductance 300 325 micromhos

  • (grid No

    3 V

    (grid No.3 voltage = 3.25 micromhos

  • (grid No

    3.25 µS

    (grid No.3 voltage = 3.25 micromhos

  • {grid No

    3 V

    {grid No.3 voltage = 3'0 - micromhos

  • Plate resistance 0.9

    1 megohm

    Plate resistance 0.9 1.0 megohm

  • 1) Based on a battery voltage of 6£7.5 or

    390 V

    1) Based on a battery voltage of 6£7.5 or 390 volts de-

  • Plate voltage

    85 V

    Plate voltage=85volts AT =

  • Grid No2 voltage

    30 V

    Grid No2 voltage =30volts /] p VARG g

  • Oscillator voltage

    4 V

    Oscillator voltage=4volts r.ms. fi/ // // 7 g

  • B Plate voltage

    85 V

    B Plate voltage =85volts > g

  • Grid No2 voltage

    230 V

    Grid No2 voltage=230volts " )

  • u Grid Nolresistor =27,0000hms A

    1 A

    u Grid Nolresistor =27,0000hms A 1 A /] i §

  • < g Supply voltage

    85 V

    < g Supply voltage =85volts

  • IR Plate voltage

    85 v

    IR Plate voltage=85votts y. §

  • ~ ’§ Grid No4 resistor

    0.18 megohms

    -~ ’§ Grid No4 resistor=0.18 megohms 4

  • 13 Grid No3 bias

    0 V

    13 Grid No3 bias =0 volt ~ S

Other

  • Plate to grid KNo

    1 mA

    Plate to grid KNo.1 max. 0.11 upF

  • Plate to grid No

    3 mA

    Plate to grid No.3 maxe. 0.36 puF

  • Grid No.1 to grid No

    3 mA

    Grid No.1 to grid No.3 max. Ce2 ppPF

  • Grid No

    1 c

    Grid No.1 circuit resistance max.35,000 ohms

  • Grid No

    35 ohms

    Grid No.1 circuit resistance max.35,000 ohms

  • Filament voltage max

    6 V

    Filament voltage max. .6 volts