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Voltage Pentode - High Frequency (single) ·Pentode

12Z8

Russian high-frequency pentode with a short characteristic, designed for high-frequency voltage amplification. Manufacturer documentation specifies a 2,000-hour service-life guarantee and electrical characteristics for RF signal-amplifier operation.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
1
Base
-
Socket code
IO
Base pins
8
Nominal heater
12.6 V / 150 mA

Description

12Z8 — High-Frequency Pentode with Short Characteristic Curve

The 12Z8 (also designated in Cyrillic as 12Ж8) is a high-frequency pentode with a short characteristic curve, designed for the amplification of intermediate- and high-frequency voltages. It features an indirectly heated oxide-coated cathode, a metal envelope, and an octal base.

Construction, Physical Dimensions, and Environmental Ratings

The 12Z8 is enclosed in a metal case (envelope) that provides robust mechanical protection and built-in electrostatic shielding. The metal envelope is internally connected to pin 1 of the octal base.

Physical Dimensions

  • Maximum overall height: 67 mm
  • Maximum envelope diameter: 27 mm
  • Maximum base diameter: 33 mm
  • Maximum weight: 42 g

Environmental and Mechanical Durability

The tube is designed to operate reliably under demanding environmental conditions:

  • Ambient temperature range: -60 °C to +70 °C
  • Relative humidity: 95% to 98% at an ambient temperature of +20 °C
  • Mechanical vibration resistance: Capable of withstanding vibration loads up to 6 g
  • Service life guarantee: Minimum of 2000 hours of operation

Heater and Pinout Configuration

The 12Z8 features an indirectly heated, oxide-coated unipotential cathode. The heater is designed for a nominal 12.6 V supply, making it suitable for series heater strings or 12 V electrical systems.

Heater Specifications

  • Nominal heater voltage (UhU_h): 12.6 V
  • Permissible heater voltage range: 11.3 V to 13.9 V
  • Nominal heater current (IhI_h): 150 ± 15 mA
  • Calculated nominal heater power: 1.89 W (calculated as 12.6 V multiplied by 0.150 A)

Pin Connection (Octal Base)

The tube uses a standard octal base with the following pin assignments (viewed from the bottom of the tube):

  • Pin 1: Metal envelope / shield
  • Pin 2: Heater
  • Pin 3: Grid 3 (Suppressor Grid)
  • Pin 4: Grid 1 (Control Grid)
  • Pin 5: Cathode
  • Pin 6: Grid 2 (Screen Grid)
  • Pin 7: Heater
  • Pin 8: Plate (Anode)

Electrical Characteristics and Operating Points

The typical electrical characteristics of the 12Z8 are measured under specific Class A amplifier operating conditions.

Typical Operating Conditions

  • Plate voltage (UaU_a): 250 V
  • Grid 2 (screen) voltage (U[g2](/tubes/G2)U_{[g2](/tubes/G2)}): 100 V
  • Grid 3 (suppressor) voltage (Ug3U_{g3}): 0 V
  • Grid 1 (control grid) bias (Ug1U_{g1}): -3 V

Measured Characteristics at Typical Operating Point

  • Plate current (IaI_a): 3 ± 1 mA
  • Grid 2 current (I[g2](/tubes/G2)I_{[g2](/tubes/G2)}): 0.8 ± 0.4 mA
  • Transconductance (SS): 1.65 ± 0.35 mA/V
  • Plate cutoff current (IazI_{az}): ≤30 μA\le 30\ \mu\text{A} (measured at a control grid bias Ug1=−10 VU_{g1} = -10\text{ V})

Interelectrode Capacitances

The 12Z8 exhibits low interelectrode capacitances, which is critical for stable high-frequency operation:

  • Input capacitance (Grid 1 to cathode, Cg1kC_{g1k}): 6 ± 1.1 pF
  • Output capacitance (Plate to cathode, CakC_{ak}): 7 ± 1.8 pF
  • Feedback capacitance (Grid 1 to plate, Cg1aC_{g1a}): ≤0.005 pF\le 0.005\text{ pF}

The extremely low grid-to-plate feedback capacitance (≤0.005 pF\le 0.005\text{ pF}) is a key feature of this pentode, minimizing Miller effect and preventing unwanted oscillations in high-frequency amplifier stages.

Maximum and Minimum Permissible Ratings

To ensure the guaranteed service life of 2000 hours, the operating conditions must be kept within the following absolute limits:

ParameterMinimum LimitMaximum Limit
Heater voltage (UhU_h)11.3 V13.9 V
Plate voltage (UaU_a)—330 V
Grid 2 voltage (U[g2](/tubes/G2)U_{[g2](/tubes/G2)})—140 V
Plate dissipation (PaP_a)—2.8 W
Grid 2 dissipation (P[g2](/tubes/G2)P_{[g2](/tubes/G2)})—0.7 W
Heater-to-cathode voltage (UkhU_{kh})—100 V

Characteristic Curves and Behavior

The behavior of the 12Z8 is illustrated by several characteristic curves.

Pentode Operation

Under standard pentode operation (Uh=12.6 VU_h = 12.6\text{ V}, U[g2](/tubes/G2)=100 VU_{[g2](/tubes/G2)} = 100\text{ V}, Ug3=0 VU_{g3} = 0\text{ V}), the plate current (IaI_a) and screen grid current (I[g2](/tubes/G2)I_{[g2](/tubes/G2)}) curves demonstrate typical pentode knee characteristics. Above a plate voltage of approximately 50 V, the plate current becomes highly independent of plate voltage, confirming a high dynamic plate resistance. The control grid voltage (Ug1U_{g1}) regulates the plate current from its maximum at 0 V0\text{ V} down to near-cutoff around −8 V-8\text{ V} to −10 V-10\text{ V}.

Triode-Connected Operation

When the 12Z8 is triode-connected, the plate current (IaI_a) versus plate voltage (UaU_a) curves show typical triode behavior. At Uh=12.6 VU_h = 12.6\text{ V}, positive control grid voltages (up to +6 V+6\text{ V}) and negative control grid voltages (down to −18 V-18\text{ V}) show a progressive shift in the conduction threshold and plate resistance.

Transfer Characteristics

The transfer curves (Ia,I[g2](/tubes/G2)I_a, I_{[g2](/tubes/G2)} vs. Ug1U_{g1}) at Ua=250 VU_a = 250\text{ V} and Ug3=0 VU_{g3} = 0\text{ V} show the effect of varying the screen grid voltage (U[g2](/tubes/G2)U_{[g2](/tubes/G2)}) at $75 ext{ V}, \100 ext{ V}, and \125 ext{ V}$. Higher screen grid voltages shift the transfer curve to the left, increasing both plate current and transconductance for a given control grid bias.

Suppressor Grid Control

The relationship of plate current to suppressor grid voltage (Ia=f(Ug3)I_a = f(U_{g3})) is plotted at Ua=250 VU_a = 250\text{ V}, U[g2](/tubes/G2)=100 VU_{[g2](/tubes/G2)} = 100\text{ V}, and Ug1=−3 VU_{g1} = -3\text{ V}. The curve shows that the suppressor grid can be used to control plate current, with the plate current dropping from approximately 3 mA at Ug3=0 VU_{g3} = 0\text{ V} down to zero as the suppressor grid is biased highly negative, reaching cutoff near −80 V-80\text{ V}. This characteristic indicates potential application in dual-control or modulating circuits.

Technical Summary

The 12Z8 is a robust, metal-envelope high-frequency pentode featuring a short characteristic curve, an octal base, and a 12.6 V heater. It is designed for intermediate- and high-frequency voltage amplification under demanding environmental conditions, including temperatures from -60 °C to +70 °C and vibration loads up to 6 g. With a transconductance of 1.65 mA/V, a low plate current of 3 mA, and an exceptionally low grid-to-plate capacitance of ≤0.005 pF\le 0.005\text{ pF}, it provides stable, high-gain amplification. The tube's suppressor grid also offers a wide control range, adding versatility to its application profile.

Socket description

International Octal

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
-
Socket code
IO
Base pins
8
Nominal heater voltage
12.6 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

1 physical section, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Transconductance
0.00165 S
Max plate voltage
330 V
Max screen voltage
140 V
Max plate dissipation
2.8 W
Max screen dissipation
0.7 W

English-primary bilingual extraction; published electrical table values retained in parameters.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

195X Russian

Published operating points and test conditions from this source.

SECTION 1

Pentode

Characteristics

  • Source symbol K

    8 h

    BLlcokouacTOTHEIN NEHTOH ¢ KOPOTKOH Xapak- The 127K8 high-frequency pentode with a short

  • Source symbol aroseuHocts

    2000 µA

    IapanrupoBannas poaroseuHocts 2000 uacos. Service life guarantee: 2000 hr.

  • Service life

    2000 h

    IapanrupoBannas poaroseuHocts 2000 uacos. Service life guarantee: 2000 hr.

  • Source symbol U,

    1286 V

    U, 1286V Uy -3V I,)) <30uA

  • Source symbol Uy

    -3 V

    U, 1286V Uy -3V I,)) <30uA

  • Published electrical parameter

    <30 µA

    U, 1286V Uy -3V I,)) <30uA

  • Source symbol I,

    150+15 mA

    I, 150+15 mA Ug 0 S 1,65-:0,35 mA/V

  • Published electrical parameter

    0.35 mA/V

    I, 150+15 mA Ug 0 S 1,65-:0,35 mA/V

  • Source symbol U,

    250 V

    U, 250V I, 3xlmA I, 0804 mA

  • Source symbol I,

    804 mA

    U, 250V I, 3xlmA I, 0804 mA

  • Source symbol Ug,

    100 V

    Ug, 100V

  • Published electrical parameter

    10 V

    ATE Uy =—10V.

  • Published electrical parameter

    1.1 pF

    Cyrc 6%1,1 pF

  • Source symbol C,

    7±18 pF

    C, 7=18pF

  • Source symbol Cgta

    <0.005 pF

    Cgta < 0,005 pF

  • Source symbol U,

    139 V

    U, 139V 113V

  • Source symbol V

    113 V

    U, 139V 113V

  • Source symbol U,

    330 V

    U, 330V

  • Source symbol Ug2

    140 V

    Ug2 140V

  • Source symbol P,

    28 W

    P, 28W

  • Source symbol sz

    7 W

    sz 07 W

  • Source symbol Uy,

    100 V

    Uy, 100V

  • Published electrical parameter

    227 mA

    227 max

  • Published electrical parameter

    33 mA

    @#33max

  • Published electrical parameter

    1 V

    [7] /=01V

  • Published electrical parameter

    40 W

    40 WY

  • Published electrical parameter

    0 V

    0 s P A 193 4 ¢ Upy=0V -1¥ -2V -3V -4V

  • Published electrical parameter

    -2 V

    0 s P A 193 4 ¢ Upy=0V -1¥ -2V -3V -4V

  • Source symbol V

    -3 V

    0 s P A 193 4 ¢ Upy=0V -1¥ -2V -3V -4V

  • Source symbol V

    -4 V

    0 s P A 193 4 ¢ Upy=0V -1¥ -2V -3V -4V

  • Source symbol LA

    8 V

    A L LA 8V] eE PR A5V

  • Source symbol A

    5 V

    A L LA 8V] eE PR A5V

  • Published electrical parameter

    126 V

    (TpHOLHOE BKJIOUEHHE) 1, U,=126V

  • Published electrical parameter

    100 V

    (tr1;de ccl);ge‘c;tmn) — — =1 Ugy=100 V

  • Published electrical parameter

    250 V

    —_ — —-Ig2 U,=250V V

  • Published electrical parameter

    3 V

    Uy =—3V

  • Published electrical parameter

    3 A

    14 3ak. 738 197