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Voltage - Triode (with diode, heptode or hexode) ·Heptode-Triode

12FX8A

Low-voltage triode-heptode for automobile-radio RF amplification and frequency conversion. The triode provides front-end RF gain while the heptode integrates oscillator and mixer functions from the 12.6 V supply.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
9KV
Socket code
B9A
Base pins
9
Nominal heater
12.6 V / 270 mA

Description

12FX8A — Low-Voltage Triode-Heptode Vacuum Tube

The 12FX8A is a miniature multi-unit vacuum tube containing a triode and a heptode section within a single envelope. It is specifically designed for use in automobile radio receivers where plate, screen, and grid voltages are supplied directly from a 12-volt storage battery. In this application, the triode section functions as a radio-frequency (RF) amplifier, while the heptode section serves as a frequency converter.

The 12FX8A is unilaterally interchangeable with the 12FX8. The primary distinction between the two types is that the 12FX8A incorporates an additional control on the conversion-conductance cutoff characteristic of the heptode section.

Physical and Mechanical Specifications

The 12FX8A is constructed in a miniature T-6 1/2 glass bulb with a small button 9-pin base (E9-1). The tube is designed to operate in any mounting position.

Physical Dimensions

  • Maximum Overall Length: 2.438 inches (2 7/16 inches)
  • Maximum Seated Height: 2.188 inches (2 3/16 inches)
  • Seated Height Range: 1.812 ± 0.094 inches
  • Maximum Diameter: 0.875 inches (7/8 inches)

Terminal Connections and Basing

The tube utilizes the JEDEC 9KV basing arrangement. The pin connections, viewed from the bottom of the base, are as follows:

  • Pin 1: Heptode Grid Numbers 2 and 4 (Screen Grid)
  • Pin 2: Heptode Grid Number 1 (Oscillator Grid)
  • Pin 3: Heptode Plate
  • Pin 4: Heater
  • Pin 5: Heater and Triode Cathode
  • Pin 6: Triode Grid
  • Pin 7: Heptode Cathode, Grid Number 5, and Internal Shield
  • Pin 8: Triode Plate
  • Pin 9: Heptode Grid Number 3 (Signal Grid)

Heater Characteristics and Supply Limits

The 12FX8A contains two coated unipotential cathodes. The heater is designed to operate from a nominal 12.6-volt supply, but because it is intended for automotive service, it must withstand the voltage fluctuations of a vehicle's electrical system.

ParameterValue
Nominal Heater Voltage (AC or DC)12.6 V
Nominal Heater Current0.27 A (270 mA)

Heater Supply Limits

When operated in automobile service from a nominal 12-volt source, the heater voltage must be maintained within strict limits to ensure reliable operation and acceptable tube life:

  • Minimum Heater Voltage: 10.0 V
  • Maximum Heater Voltage: 15.9 V

Extreme variations within this range may be tolerated for short periods. However, continuous operation near these absolute limits degrades performance at the low end and significantly reduces life expectancy at the high end. Improving supply-voltage regulation is highly recommended to maximize equipment reliability.

Heater-Cathode Voltage Ratings

  • Heater Positive with Respect to Cathode (Maximum): 16 V
  • Heater Negative with Respect to Cathode (Maximum): 16 V

Maximum Ratings (Design-Center Values)

The maximum ratings for the 12FX8A are established under the Design-Center system. These values represent limiting operating and environmental conditions for a nominal ("bogey") tube and should not be exceeded under normal operating conditions.

RatingValue
Heptode Plate Voltage16 V
Heptode Screen-Supply Voltage16 V
Heptode Screen Voltage16 V
Heptode Positive DC Grid #3 Voltage0 V
Heptode Negative DC Grid #3 Voltage16 V
Triode Plate Voltage16 V
Heptode Grid #3 Circuit Resistance10 MΩ
Triode Grid-Circuit Resistance10 MΩ

Typical Operating Characteristics

The 12FX8A is optimized for low-voltage operation, with typical operating points established at a nominal plate and screen supply of 12.6 V.

Average Characteristics (Class A Amplifier / Converter Service)

ParameterHeptode SectionTriode Section
Plate Voltage12.6 V12.6 V
Screen Voltage12.6 V—
Grid #3 Voltage0.5 V*—
Grid #3 Resistance2.2 MΩ—
Grid #1 Voltage (RMS)1.6 V—
Grid #1 Resistance0.033 MΩ2.2 MΩ
Grid Voltage—0.8 V**
Plate Resistance (Approx.)0.5 MΩ—
Conversion Transconductance300 µmhos—
Transconductance—1400 µmhos
Amplification Factor—10
Plate Current0.29 mA1.3 mA
Screen Current1.25 mA—

** Voltage developed across a 2.2 MΩ Grid #3 resistor.* *** Voltage developed across a 2.2 MΩ Grid resistor.*

Cutoff Characteristics

  • Heptode Grid #3 Voltage (Approximate):
    • For a conversion transconductance (GcG_c) of 10 µmhos: -3.0 V
    • For a conversion transconductance (GcG_c) of 1.0 µmhos: -8.0 V
  • Triode Grid Voltage (Approximate):
    • For a plate current (IbI_b) of 10 µA: -3.2 V

Heptode Oscillator Characteristics (Not Oscillating)

The heptode section can be evaluated under non-oscillating conditions with the screen connected directly to the plate:

  • Plate Voltage: 12.6 V
  • Screen (Connected to Plate) Voltage: 12.6 V
  • Grid #3 Voltage: 0 V
  • Grid #1 Voltage: 0 V
  • Amplification Factor (between Grid #1 and Grids #2 & #4 connected to plate): 9
  • Transconductance (between Grid #1 and Grids #2 & #4 connected to plate): 3600 µmhos
  • Cathode Current: 4.4 mA
  • Grid #1 Voltage (Approximate, for IbI_b = 10 µA): -4.5 V

Direct Interelectrode Capacitances

These capacitance values are measured directly without an external shield.

Heptode Section Capacitances

  • Grid #3 to Plate (max): 0.28 pF
  • Grid #3 to Grid #1 (max): 0.12 pF
  • RF Input (Grid #3 to Heater, Triode Cathode, Heptode Cathode, Grid #1, Grids #2 & #4, Grid #5, Plate, and Internal Shield): 6.0 pF
  • Oscillator Input (Grid #1 to Heater, Triode Cathode, Heptode Cathode, Grids #2 & #4, Grid #3, Grid #5, Plate, and Internal Shield): 5.0 pF
  • Mixer Output (Plate to Heater, Triode Cathode, Heptode Cathode, Grid #1, Grids #2 & #4, Grid #3, Grid #5, and Internal Shield): 5.0 pF
  • Grid #1 to Cathode (Grid #1 to Heptode Cathode, Grid #5, and Internal Shield): 3.0 pF
  • Oscillator Output (Heptode Cathode to Heater, Triode Cathode, Grids #2 & #4, Grid #3, and Plate): 17 pF
  • Grid #1 to Plate (max): 0.16 pF

Triode Section Capacitances

  • Grid to Plate: 1.3 pF
  • Input (Grid to Triode Cathode and Heater): 2.2 pF
  • Output (Plate to Triode Cathode and Heater): 0.25 pF

Inter-Section Capacitances

  • Triode Grid to Heptode Grid #3 (max): 0.01 pF
  • Triode Plate to Heptode Grid #3 (max): 0.18 pF
  • Triode Plate to Heptode Plate (max): 0.20 pF

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9KV
Socket code
B9A
Base pins
9
Nominal heater voltage
12.6 V
Nominal heater current
270 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9KV - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Heptode

X-ray radiationInterelectrode capacitances
Plate resistance
500000 Ω
Transconductance
0.0003 S
Max plate voltage
16 V
Max screen voltage
16 V

Heptode converter section; published ratings/characteristics promoted where applicable.

Section 2

Triode

X-ray radiationInterelectrode capacitances
Transconductance
0.0014 S
Amplification factor
10
Max plate voltage
16 V

Triode RF-amplifier section; published ratings/characteristics promoted where applicable.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Heptode

Other

  • Heater voltage

    12.6 V

  • Heater current

    270 mA

Characteristic

  • Conversion transconductance

    300 uS

    Converter

  • Oscillator transconductance

    3600 uS

    NotOscillating

Capacitance

  • RF input capacitance

    6 pF

SECTION 2

Triode

Capacitance

  • Grid-to-plate capacitance

    1.3 pF

Data set 02

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 1

Heptode

Capacitance

  • GRID #3 TO PLATE: (HG} TO HP) MAX

    0.28 pF

    Interelectrode capacitances

  • GRID #3 TO GRID #i: (HG3 TO HGi), MAX

    0.12 pF

    Interelectrode capacitances

  • HP+

    1 pF

    Interelectrode capacitances; published column 1

  • HP+

    5 pF

    Interelectrode capacitances; published column 2

  • MIXER

    0 pF

    Interelectrode capacitances; published column 1

  • MIXER

    2 pF

    Interelectrode capacitances; published column 2

  • MIXER

    4 pF

    Interelectrode capacitances; published column 3

  • MIXER

    1 pF

    Interelectrode capacitances; published column 4

  • GRID #i TO CATHODE: HGi TO (HK+HG5+

    1 pF

    Interelectrode capacitances; published column 1

  • GRID #i TO CATHODE: HGi TO (HK+HG5+

    3 pF

    Interelectrode capacitances; published column 2

  • GRID #i TO PLATE: (HG1 TO HP) MAX

    0.16 pF

    Interelectrode capacitances

  • GRID TO PLATE: (TG TO TP)

    1.3 pF

    Interelectrode capacitances

  • DESIGN MA%

    1 mA

    Interelectrode capacitances; published column 1

  • DESIGN MA%

    2 mA

    Interelectrode capacitances; published column 2

  • AVERAGE CHARACTERISTICS

    12.6 V

    Interelectrode capacitances; published column 1

  • AVERAGE CHARACTERISTICS

    27 V

    Interelectrode capacitances; published column 2

  • AVERAGE CHARACTERISTICS

    0 V

    Interelectrode capacitances; published column 3

  • WHEN USED

    1 V

    Interelectrode capacitances; published column 1

  • WHEN USED

    12 V

    Interelectrode capacitances; published column 2

  • S NOU

    10 V

    Interelectrode capacitances; published column 1

  • S NOU

    1 V

    Interelectrode capacitances; published column 2

  • S NOU

    0 V

    Interelectrode capacitances; published column 4

  • HEATER POSITIVE WITH RESPECT TO CATHODE

    16 V

    Interelectrode capacitances

  • HEATER NEGATIVE WITH RESPECT TO CATHODE

    16 V

    Interelectrode capacitances

Other

  • HEPTODE PLATE VOLTAGE

    16 V

    Maximum ratings

  • HEPTODE SCREEN —SUPPLY VOLTAGE

    16 V

    Maximum ratings

  • HEPTODE SCREEN VOLTAGE

    16 V

    Maximum ratings

  • HEPTODE POSITIVE DC GRID #3 VOLTAGE

    0 V

    Maximum ratings

  • HEPTODE NEGATIVE

    0 V

    Maximum ratings; published column 1

  • HEPTODE NEGATIVE

    16 V

    Maximum ratings; published column 2

  • HEPTODE GRID #3 CIRCUIT RESISTANCE

    10000000 ohm

    Maximum ratings

  • PLATE VOLTAGE

    12.6 V

    Typical operating conditions; published column 1

  • SCREEN VOLTAGE

    12.6 V

    Typical operating conditions

  • GRID #3 VOLTAGE

    0 V

    Typical operating conditions

  • GRID #i VOLTAGE, RMS

    1.6 V

    Typical operating conditions

  • GRID #i RESISTANCE

    33000 ohm

    Typical operating conditions; published column 1

  • GRID #i RESISTANCE

    2200000 ohm

    Typical operating conditions; published column 2

  • GRID VOLTAGE

    0 V

    Typical operating conditions

  • PLATE RESISTANCE, APPROX

    500000 ohm

    Typical operating conditions

  • CONVERSION TRANSCONDUCTANCF

    3 uS

    Typical operating conditions; published column 1

  • CONVERSION TRANSCONDUCTANCF

    0 uS

    Typical operating conditions; published column 2

  • TRANSCONDUCTANCE

    1400 uS

    Typical operating conditions

  • PLATE CURRENT

    0.29 mA

    Typical operating conditions; published column 1

  • PLATE CURRENT

    1.3 mA

    Typical operating conditions; published column 2

  • SCREEN CURRENT

    125 mA

    Typical operating conditions

  • GC =

    10 uS

    Typical operating conditions; published column 1

  • GC =

    -3 uS

    Typical operating conditions; published column 2

  • Gc =

    1 uS

    Typical operating conditions; published column 1

  • Gc =

    0 uS

    Typical operating conditions; published column 2

  • PLATE VOLTAGE

    1 V

    Typical operating conditions; published column 1

  • PLATE VOLTAGE

    2.6 V

    Typical operating conditions; published column 2

  • GRID #} VOLTAGE

    0 V

    Typical operating conditions

  • GRID ~

    1 V

    Typical operating conditions; published column 1

  • GRID ~

    0 V

    Typical operating conditions; published column 2

  • TRANSCONDUCTANCE D

    3600 uS

    Typical operating conditions

  • CATHODE CURRENT

    4.4 mA

    Typical operating conditions

  • Maximum plate voltage

    16 V

    Published datasheet; promoted section value

  • Maximum screen voltage

    16 V

    Published datasheet; promoted section value

Characteristic

  • Plate resistance

    500000 ohm

    Published datasheet; promoted section value

  • Conversion transconductance

    300 uS

    Heptode converter

SECTION 2

Triode

Other

  • DIRECTLY FROM A

    12 V

    Published datasheet; published column 1

  • DIRECTLY FROM A

    1 V

    Published datasheet; published column 2

  • TRIODE PLATE VOLTAGE

    16 V

    Maximum ratings

  • TRIODE GRID —CIRCUIT RESISTANCE

    10000000 ohm

    Maximum ratings

  • Maximum plate voltage

    16 V

    Published datasheet; promoted section value

Capacitance

  • TRIODE GRID TO HEPTOOE GRID #3: (TG TO HG3), MAX

    0.01 pF

    Interelectrode capacitances

  • TRIODE PLATE TO HEPTODE GRID #3: (TP TU HG3), MAX

    0.18 pF

    Interelectrode capacitances

  • TRIODE PLATE TO HEPTODE PLATE: (TP TO HP), MAX

    0.2 pF

    Interelectrode capacitances

Characteristic

  • Transconductance

    0.0014 A/V

    Published datasheet; promoted section value

  • Amplification factor

    10

    Published datasheet; promoted section value