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Voltage Radio Detector Converter ·Diode-Diode-Pentode

12EQ7

Double-diode pentode combining detector functions with a comparatively strong voltage-amplifier pentode. The paired diodes provide signal or control-voltage rectification while the pentode supplies subsequent receiver gain.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
J
Socket code
-
Base pins
7
Nominal heater
12.6 V / 150 mA

Description

12EQ7 — Diode-Remote-Cutoff Pentode

The 12EQ7 is a multi-unit miniature vacuum tube containing a diode and a remote-cutoff pentode sharing a common unipotential cathode. Housed in a 9-pin miniature envelope, this device is specifically engineered for service in AM and AM/FM broadcast receivers. Its primary applications include functioning as a combined intermediate-frequency (IF) amplifier and AM detector. The pentode section is also highly suitable for radio-frequency (RF) or IF amplification, while the diode section is designed for detection or automatic volume control (AVC) duties.

Physical Construction and Basing

The 12EQ7 is constructed using a T-6 1/2 glass bulb with a small button 9-pin noval base (designated JEDEC E9-1). The tube conforms to the JEDEC 6-3 outline drawing and utilizes the JEDEC 9LQ basing diagram. It is designed to operate in any mounting position.

The physical dimensions of the tube are as follows:

  • Maximum Diameter: 0.875 inches
  • Maximum Seated Height: 2.375 inches
  • Maximum Overall Height: 2.625 inches

The 9LQ basing configuration provides the following pin connections, viewed from the bottom of the tube:

  • Pin 1: Grid No. 3 (G3 / Suppressor Grid)
  • Pin 2: Grid No. 1 (G1 / Control Grid)
  • Pin 3: Cathode (K)
  • Pin 4: Heater (H)
  • Pin 5: Heater (H)
  • Pin 6: Grid No. 2 (G2 / Screen Grid)
  • Pin 7: Pentode Plate (1P)
  • Pin 8: Diode Plate (2P)
  • Pin 9: Internal Shield (IS)

Heater Characteristics and Ratings

The 12EQ7 features an indirectly heated, coated unipotential cathode. The heater is designed for series or parallel operation with the following electrical specifications:

Heater ParameterValue
Nominal Heater Voltage12.6 V
Nominal Heater Current150 mA (0.15 A)
Heater Voltage Operating Limits12.6 ± 1.3 V

Maximum Heater-Cathode Ratings

To ensure reliable operation and prevent insulation breakdown, the voltage difference between the heater and the cathode must be kept within specified limits:

  • Heater Negative with Respect to Cathode: 200 V (Peak or Total DC and Peak)
  • Heater Positive with Respect to Cathode: 200 V (Peak or Total DC and Peak), with the DC component restricted to a maximum of 100 V.

Direct Interelectrode Capacitances

The direct interelectrode capacitances of the 12EQ7 are measured without an external shield. These values define the capacitive coupling between elements, which is critical for stable high-frequency RF and IF amplification:

Capacitance ParameterValue
Grid No. 1 to Plate (Max.)0.002 pF
Input (Grid No. 1 to Cathode, Heater, Grid No. 2, Grid No. 3, and Internal Shield)5.5 pF
Output (Plate to Cathode, Heater, Grid No. 2, Grid No. 3, and Internal Shield)5.0 pF
Grid No. 1 to Diode Plate (Max.)0.0015 pF
Pentode Plate to Diode Plate (Max.)0.095 pF

Maximum Ratings

The maximum ratings for the 12EQ7 are established under the Design-Maximum System. Operating the tube beyond these limits may impair performance or shorten its operating life.

Pentode Unit (Class A1 Amplifier)

  • Plate Voltage: 300 V
  • Grid No. 3 (Suppressor Grid) Voltage (Positive or Negative): 300 V
  • Grid No. 2 (Screen Grid) Supply Voltage: 300 V
  • Grid No. 2 Voltage: See Rating Chart (dependent on operating conditions)
  • Grid No. 1 (Control Grid) Positive Bias Value: 0 V
  • Grid No. 1 (Control Grid) Negative Bias Value: 50 V
  • Plate Dissipation: 3.0 Watts
  • Grid No. 3 Input: 0.2 Watt
  • Grid No. 2 Input (for Grid No. 2 voltages up to 150 V): 0.6 Watt
  • Grid No. 2 Input (for Grid No. 2 voltages between 150 V and 300 V): See Rating Chart
  • Bulb Temperature (at hottest point on bulb surface): 150 °C

Diode Unit

  • Plate Current: 1.0 mA (Design-Maximum continuous value; Sylvania lists a maximum rating of 3.0 mA)

Typical Operating Characteristics

The typical operating parameters of the pentode unit under Class A1 amplifier conditions demonstrate its performance as a high-gain, remote-cutoff stage:

ParameterValue
Plate Voltage100 V
Grid No. 3Connected to cathode at socket
Internal ShieldConnected to cathode at socket
Grid No. 2 Voltage100 V
Grid No. 1 Supply Voltage0 V
Grid No. 1 Resistor (Bypassed)2.2 MΩ
Transconductance3800 µmhos
Plate Resistance (Approx.)0.25 MΩ (250,000 Ω)
Plate Current9.0 mA
Grid No. 2 Current3.5 mA
Grid No. 1 Voltage (Approx.) for Transconductance of 40 µmhos-20 V

The remote-cutoff characteristic of the control grid is illustrated by the bias voltage required to reduce the transconductance. A negative bias of approximately -20 V reduces the transconductance from its nominal 3800 µmhos down to 40 µmhos, allowing effective automatic volume control (AVC) without introducing severe distortion on strong signals.

Diode Unit Characteristics

The diode unit is characterized by its instantaneous voltage drop under typical detection or AVC conditions:

  • Tube Voltage Drop (for plate current of 2.0 mA): 10 V
  • Average Diode Current (with 10 V DC applied): 2.0 mA

Related Designations

The 12EQ7 belongs to a family of identical multi-unit tubes designed with different heater configurations to accommodate various receiver power supply topologies:

  • 6EQ7: Identical to the 12EQ7 except for its heater ratings, which require a 6.3 V supply at a current of 300 mA (0.3 A).
  • 20EQ7: Identical to the 12EQ7 except for its heater ratings, which require a 20 V supply at a current of 100 mA (0.1 A).

These tubes share the same physical dimensions, 9LQ basing diagram, capacitances, and electrical characteristics for both the pentode and diode units, but they are not directly interchangeable without modifying the heater supply circuit.

Technical Summary

The 12EQ7 is a versatile, 9-pin miniature diode-remote-cutoff pentode designed for AM and AM/FM broadcast receiver applications. Combining an IF/RF amplifier pentode and a detection/AVC diode in a single T-6 1/2 envelope, it optimizes space and component count in consumer electronics. With a 12.6 V, 150 mA heater, the tube is well-suited for series-string heater arrangements. The pentode unit provides a transconductance of 3800 µmhos and a plate resistance of 0.25 MΩ at a typical plate and screen potential of 100 V, while its remote-cutoff grid design allows for smooth gain control over a wide range of signal strengths.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
J
Socket code
-
Base pins
7
Nominal heater voltage
12.6 V
Nominal heater current
150 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

J - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
250000 Ω
Transconductance
0.0038 S
Amplification factor
70
Max plate voltage
300 V
Max plate dissipation
3 W

Remote-cutoff pentode section; published ratings/characteristics promoted where applicable.

Section 2

Diode

X-ray radiationInterelectrode capacitances
Rectifier nominal output current
1 mA

Detector/AVC diode section; published ratings/characteristics promoted where applicable.

Section 3

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater voltage

    12.6 V

    Nominal

  • Heater current

    150 mA

    Nominal

  • Plate voltage

    200 V

    Typical operating conditions

  • Screen voltage

    100 V

    Typical operating conditions

  • Plate current

    1 mA

    Typical operating conditions

SECTION 2

Diode

Other

  • Heater voltage

    12.6 V

    Nominal

  • Heater current

    150 mA

    Nominal

  • Plate voltage

    200 V

    Typical operating conditions

  • Screen voltage

    100 V

    Typical operating conditions

  • Plate current

    1 mA

    Typical operating conditions

SECTION 3

Diode

Other

  • Heater voltage

    12.6 V

    Nominal

  • Heater current

    150 mA

    Nominal

  • Plate voltage

    200 V

    Typical operating conditions

  • Screen voltage

    100 V

    Typical operating conditions

  • Plate current

    1 mA

    Typical operating conditions

Data set 02

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • S MA

    11 mA

    Published datasheet

  • DESIGN MA%

    1 mA

    Maximum ratings; published column 1

  • DESIGN MA%

    2 mA

    Maximum ratings; published column 2

  • PLATE VOLTAGE

    3 V

    Maximum ratings; published column 1

  • PLATE VOLTAGE

    0 V

    Maximum ratings; published column 2

  • POSITIVE VALUE

    3 V

    Maximum ratings; published column 1

  • POSITIVE VALUE

    0 V

    Maximum ratings; published column 2

  • NEGATIVE VALUE

    3 V

    Maximum ratings; published column 1

  • NEGATIVE VALUE

    0 V

    Maximum ratings; published column 2

  • GRID #2 SUPPLY VOLTAGE

    3 V

    Maximum ratings; published column 1

  • GRID #2 SUPPLY VOLTAGE

    0 V

    Maximum ratings; published column 2

  • POSIT'

    1 V

    Maximum ratings; published column 1

  • POSIT'

    0 V

    Maximum ratings; published column 2

  • NEGATIVE BIAS VALUE

    5 V

    Maximum ratings; published column 1

  • NEGATIVE BIAS VALUE

    0 V

    Maximum ratings; published column 2

  • PLATE DISSIPATION

    3 W

    Maximum ratings

  • GRID #3

    1 W

    Maximum ratings; published column 1

  • GRID #3

    0.2 W

    Maximum ratings; published column 2

  • FOR GRID #2 VOLTAGES UP TO iS0 VOLTS

    0.6 V

    Maximum ratings

  • GRID #2 VOLTAGE

    100 V

    Typical operating conditions

  • GRID #1 SUPPLY VOLTAGE

    0 V

    Typical operating conditions

  • TRANSCONOUCTANCE

    3800 uS

    Typical operating conditions

  • PLATE RESISTANCE (APPR

    0 ohm

    Typical operating conditions; published column 1

  • PLATE RESISTANCE (APPR

    250000 ohm

    Typical operating conditions; published column 2

  • PLATE CURRENT

    9 mA

    Typical operating conditions

  • GRID #2 CURRENT

    3.5 mA

    Typical operating conditions

  • TRANSCONDUCTANCE

    0 uS

    Typical operating conditions; published column 1

  • TRANSCONDUCTANCE

    40 uS

    Typical operating conditions; published column 2

  • TRANSCONDUCTANCE

    -2 uS

    Typical operating conditions; published column 3

  • PLATE VOLTAGE

    10 V

    Typical operating conditions

  • PLATE CURRENT

    2 mA

    Typical operating conditions

  • Maximum plate voltage

    300 V

    Published datasheet; promoted section value

  • Maximum plate dissipation

    3 W

    Published datasheet; promoted section value

Capacitance

  • GRID #1 TO PLATE (MAX.)

    2 pF

    Interelectrode capacitances

  • GRID #1 TO K, H, G2, G3, &

    1 pF

    Interelectrode capacitances; published column 1

  • GRID #1 TO K, H, G2, G3, &

    5.5 pF

    Interelectrode capacitances; published column 2

  • PLATE TO K, H, G2, G3, k

    1 pF

    Interelectrode capacitances; published column 1

  • PLATE TO K, H, G2, G3, k

    5 pF

    Interelectrode capacitances; published column 2

  • DESIGN MA%

    1 mA

    Interelectrode capacitances; published column 1

  • DESIGN MA%

    2 mA

    Interelectrode capacitances; published column 2

  • AVERAGE CHARACTERISTICS

    12.6 V

    Interelectrode capacitances; published column 1

  • AVERAGE CHARACTERISTICS

    150 V

    Interelectrode capacitances; published column 2

  • VOLTAGE

    0 V

    Interelectrode capacitances; published column 1

  • VOLTAGE

    12.6 V

    Interelectrode capacitances; published column 2

  • VOLTAGE

    3 V

    Interelectrode capacitances; published column 3

  • HEATER NEGATIVE WITH RESPECT TO CATHODE

    200 V

    Interelectrode capacitances

  • HEATER POSITIVE WITH RESPECT TO CATHODE

    2 V

    Interelectrode capacitances; published column 1

  • HEATER POSITIVE WITH RESPECT TO CATHODE

    0 V

    Interelectrode capacitances; published column 2

Characteristic

  • Plate resistance

    250000 ohm

    Published datasheet; promoted section value

  • Transconductance

    0.0038 A/V

    Published datasheet; promoted section value

SECTION 2

Diode

Capacitance

  • GRID #1 TO DIODE PLATE (MAX.)

    15 pF

    Interelectrode capacitances

  • PENTODE PLATE TO DIODE PLATE

    95 pF

    Interelectrode capacitances

Other

  • Maximum/average diode output current

    1 mA

    Published datasheet; promoted section value

Characteristic

  • Average diode plate current at 10 V

    2 mA

    Diode unit