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Voltage Pentode or Tetrode (under 100V) ·Diode-Diode-Tetrode

12DV8

Two-diode space-charge-grid tetrode for low-voltage automobile-radio service, providing useful amplification directly from approximately 12.6 V while integrating detector or control rectification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
9HR
Socket code
B9A
Base pins
9
Nominal heater
12.6 V / 225 mA

Description

12DV8 — Duplex-Diode Space-Charge-Grid Tetrode

The 12DV8 is a miniature duplex-diode, space-charge-grid tetrode designed for use in automobile receivers. It serves as a combined detector, automatic volume control (AVC) rectifier, and transistor driver. The tetrode section of the tube is specifically engineered to operate with its plate and space-charge-grid voltages supplied directly from a 12-volt storage battery, making it highly suitable for hybrid vacuum-tube/transistor automotive systems.

Physical Construction and Basing

The 12DV8 is constructed in a miniature T-6 1/2 glass envelope with an E9-1 small button 9-pin base. The tube features a coated unipotential cathode and can be mounted in any position.

Physical Dimensions

  • Maximum Diameter: 7/8 inch
  • Maximum Overall Length: 2 5/8 inches
  • Maximum Seated Height: 2 3/8 inches

Terminal Connections

The 12DV8 uses the 9HR basing arrangement. The pin connections, viewed from the bottom of the base, are as follows:

PinConnection
Pin 1Diode Number 2 Plate
Pin 2Tetrode Cathode
Pin 3Tetrode Grid Number 1 (Space-Charge Grid)
Pin 4Heater
Pin 5Heater
Pin 6Tetrode Plate
Pin 7Tetrode Grid Number 2 (Control Grid)
Pin 8Diodes Cathode and Shield
Pin 9Diode Number 1 Plate

The diodes share a cathode connection with an internal shield on Pin 8, which is separate from the tetrode cathode on Pin 2.

Heater Characteristics and Automotive Service

The heater of the 12DV8 is designed for operation from either an alternating current (AC) or direct current (DC) supply.

Heater ParameterValue
Nominal Heater Voltage12.6 V
Nominal Heater Current0.375 A

Automotive Voltage Variations

When operated in automotive service from a nominal 12-volt source, the heater voltage is subject to wide fluctuations. Under no circumstances should the heater voltage fall below 10.0 volts or exceed 15.9 volts. While these extreme variations can be tolerated for short periods, operating at or near these limits impacts the tube's performance and longevity:

  • Low Heater Voltage: Results in a sacrifice in electrical performance.
  • High Heater Voltage: Significantly reduces the life expectancy of the tube.

To maximize equipment reliability, improved supply-voltage regulation is highly recommended.

Maximum Ratings

The following limiting values are established under the Design-Maximum System. These ratings represent the limits at which satisfactory tube life can be expected under the worst probable operating conditions, including supply-voltage variations, component tolerances, and environmental changes.

ParameterDesign-Maximum Rating
Maximum Plate Voltage16 V
Maximum Negative Control-Grid Voltage16 V
Maximum Space-Charge-Grid Voltage16 V
Maximum Heater-Cathode Voltage (Heater Positive)16 V
Maximum Heater-Cathode Voltage (Heater Negative)16 V
Maximum Control-Grid Circuit Resistance10 MΩ
Maximum Diode Current for Continuous Operation (Each Diode)5.0 mA

Direct Interelectrode Capacitances

The direct interelectrode capacitances of the 12DV8 are measured without an external shield:

Capacitance ParameterValue
Tetrode Grid Number 2 (Control Grid) to Plate12 µµF
Tetrode Input9.0 µµF
Tetrode Output1.0 µµF
Tetrode Grid Number 2 to Any Diode Plate (Maximum)0.015 µµF
Diode Number 1 Input1.7 µµF
Diode Number 2 Input1.6 µµF
Diode Number 1 Plate to Diode Number 2 Plate (Maximum)0.10 µµF

Typical Operating Conditions and Characteristics

The tetrode section of the 12DV8 is designed to operate at very low voltages, typically matching the 12.6 V heater supply.

Average Characteristics

At a standard operating point, the average characteristics of the tetrode and diode sections are:

  • Plate Voltage: 12.6 V
  • Space-Charge-Grid Voltage: 12.6 V
  • Cathode Resistor: 18 Ω
  • Control-Grid Resistor: 4.7 MΩ
  • Amplification Factor (Control Grid to Plate): 7.6
  • Plate Resistance (Approximate): 900 Ω
  • Transconductance (Control Grid to Plate): 8,500 µmhos
  • Plate Current: 9.0 mA
  • Space-Charge-Grid Current: 53 mA
  • Average Diode Current (Each Diode, with 10 V DC applied): 3.0 mA

Class A Amplifier Operation

When configured as a Class A amplifier, the 12DV8 operates under the following typical conditions:

ParameterValue
Plate Voltage12.6 V
Space-Charge-Grid Voltage12.6 V
Cathode Resistor18 Ω
Control-Grid Resistor4.7 MΩ
AF Signal Source Resistance300,000 Ω
Peak AF Control-Grid Voltage1.2 V
Maximum Signal Plate Current6.8 mA
Space-Charge-Grid Current54 mA
Load Resistance1,250 Ω
Total Harmonic Distortion (Approximate)3%
Power Output5 mW

The low plate resistance of 900 ohms and high transconductance of 8,500 µmhos allow the tetrode section to efficiently drive a subsequent transistor stage, delivering a power output of 5 milliwatts into a 1,250-ohm load with low distortion.

Socket description

Small-button Noval 9-contact

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
9HR
Socket code
B9A
Base pins
9
Nominal heater voltage
12.6 V
Nominal heater current
225 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

9HR - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Space-charge grid

Section 2

Diode

X-ray radiationInterelectrode capacitances

No fixed ratings are recorded for this section.

Representative identical-diode row

Section 3

Tetrode

X-ray radiationInterelectrode capacitances
Plate resistance
900 Ω
Transconductance
0.0085 S
Amplification factor
7.6
Max plate voltage
16 V

Promoted from published ratings/characteristics tables; additional operating points and capacitances retained in TUBE_SECTION_PARAMETER.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1961 Tung Sol

Published operating points and test conditions from this source.

SECTION 1

Diode

Other

  • Heater voltage

    12.6 V

    Nominal

  • Heater current

    225 mA

    Nominal

  • Plate voltage

    16 V

    Typical operating conditions

  • Plate current

    9 mA

    Typical operating conditions

SECTION 2

Diode

Other

  • Heater voltage

    12.6 V

    Nominal

  • Heater current

    225 mA

    Nominal

  • Plate voltage

    16 V

    Typical operating conditions

  • Plate current

    9 mA

    Typical operating conditions

Data set 02

1966 Tung Sol Electronic Tubes 2 of 4

Published operating points and test conditions from this source.

SECTION 3

Tetrode

Characteristic

  • TETRODE GRID #

    2 mA

    TETRODE GRID #2 TO ANY DIODE PLATE (MAX.) 0.015 µµf

  • DIODE #

    1 mA

    DIODE #1 PLATE TO DIODE #2 PLATE (MAX.) 0.10 µµf

  • HEATER VOLTAGE

    12.6 V

    HEATER VOLTAGE 12.6A VOLTS

  • HEATER POSITIVE WITH RESPECT TO CATHODE

    16 V

    HEATER POSITIVE WITH RESPECT TO CATHODE 16 VOLTS

  • HEATER NEGATIVE WITH RESPECT TO CATHODE

    16 V

    HEATER NEGATIVE WITH RESPECT TO CATHODE 16 VOLTS

  • NEATER VOLTAGE BE LESS THAN

    10 V

    NEATER VOLTAGE BE LESS THAN 10.0 VOLTS OR NORE TN AN 15.9 VOLTS. THESE EXTREME VARIATIONS IM

  • HEATER CURRENT

    370 mA

    HEATER CURRENT 0.37Fj AMP.

  • PLATE VOLTAGE

    1.2 V

    PLATE VOLTAGE 1.2.6 VOLTS

  • CONTROL GRID RESISTOR

    4.7 MΩ

    CONTROL GRID RESISTOR 4.7 MEGOHMS

  • SPACE- CHARGE- GRID VOLTAGE

    12.6 V

    SPACE- CHARGE- GRID VOLTAGE 12.6 VOLTS

  • AMPLIFICATION FACTOR S

    7.6 A

    AMPLIFICATION FACTOR S 7,6

  • PLATE RESISTANCE (APPROX.)

    9 Ω

    PLATE RESISTANCE (APPROX.) 9OO OHMS

  • PLATE CURRENT

    9 mA

    PLATE CURRENT 9.0 MA.

  • SPACE- CHARGE-GRID CURRENT

    53 mA

    SPACE- CHARGE-GRID CURRENT 53 MA•

  • HEATER CURRENT

    375 mA

    HEATER CURRENT 0.375 AMP.

  • PLATE VOLTAGE '

    12.6 V

    PLATE VOLTAGE '12.6 VOLTS

  • CONTROL- GRID RESISTOR

    4.7 Ω

    CONTROL- GRID RESISTOR 4.7 ME GOHMS

  • SPACE-CHARGE-GRID VOLTAGE

    12.6 V

    SPACE-CHARGE-GRID VOLTAGE 12.6 voLTs

  • PEAK AF CONTROL-GRID VOLTAGE Z

    2 V

    PEAK AF CONTROL-GRID VOLTAGE Z.2 VOLTS

  • SPACE-CHARGE-GRID CURRENT

    54 mA

    SPACE-CHARGE-GRID CURRENT 54 MA.

Other

  • MAXIMUM PLATE VOLTAGE

    16 V

    MAXIMUM PLATE VOLTAGE 16 VOLTS

  • MAXIMUM NEGATIVE CONTROL-GRID VOLTAGE

    16 V

    MAXIMUM NEGATIVE CONTROL-GRID VOLTAGE 16 VOLTS

  • MAXIMUM SPACE-CHARGE-GRID VOLTAGE

    16 V

    MAXIMUM SPACE-CHARGE-GRID VOLTAGE 16 VOLTS

  • MAXIMUM CONTROL-GRID CIRCUIT RESISTANCE

    10 mA

    MAXIMUM CONTROL-GRID CIRCUIT RESISTANCE 10 MEGOHMS

  • MAXIMUM DIODE CURRENT FOR CONTINUOUS OPERATION (EA.DIOD E)

    5 mA

    MAXIMUM DIODE CURRENT FOR CONTINUOUS OPERATION (EA.DIOD E) 5,0 MA.

  • AF SIGNAL SOURCE RESISTANCE

    300 Ω

    AF SIGNAL SOURCE RESISTANCE 300 000 OHMS

  • MAXIMUM SIGNAL PLATE CURRENT

    6 mA

    MAXIMUM SIGNAL PLATE CURRENT 6.$ MA.

  • LOAD RESISTANCE Z

    25 Ω

    LOAD RESISTANCE Z 25O OHMS