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Voltage Dual Pentode ·Pentode-Pentode

12BV11

Compactron sharp-cutoff twin pentode designed as color-demodulator elements in color television receivers.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
2
Base
12HB
Socket code
-
Base pins
12
Nominal heater
12.6 V / 450 mA

Description

12BV11 — Twin Dual-Control Sharp-Cutoff Pentode

The 12BV11 is a multi-electrode vacuum tube of the compactron family, designed primarily for use as a color demodulator in color television receivers. It contains two independent, sharp-cutoff pentode units within a single T-9 glass envelope. A key feature of its design is that both Grid No. 1 (control grid) and Grid No. 3 (suppressor grid) of each pentode section are designed to operate as independent control electrodes, allowing for dual-signal control or demodulation functions within each unit.

The 12BV11 is identical to the 6BV11 except for its heater ratings, with the 12BV11 configured for parallel heater circuits and the 6BV11 configured for series heater circuits.

Physical Construction and Basing

The 12BV11 is constructed in a compactron T-9 glass bulb with a button 12-pin base (E12-70 designation). This physical configuration requires a standard duodecar 12-contact socket.

The physical dimensions of the tube are:

  • Maximum Diameter: 1.188 inches
  • Maximum Seated Height: 2.250 inches
  • Maximum Overall Height: 2.625 inches

Pinout Configuration (12HB Basing)

The tube utilizes the 12HB basing arrangement. An internal shield is incorporated within the structure to minimize crosstalk and unwanted coupling between the two pentode sections. This internal shield is internally connected to the heater at Pin 12. To achieve the specified electrical characteristics and ensure stable operation, Pin 12 must be connected directly to circuit ground.

The pin connections, viewed from the bottom of the tube base, are assigned as follows:

Pin NumberElectrode Connection
1Heater
2Plate (Pentode Unit 2)
3Grid No. 2 - Screen Grid (Pentode Unit 2)
4Grid No. 1 - Control Grid (Pentode Unit 2)
5Cathode (Pentode Unit 2)
6Grid No. 3 - Suppressor Grid (Pentode Unit 2) / Internal Shield
7Grid No. 3 - Suppressor Grid (Pentode Unit 1) / Internal Shield
8Cathode (Pentode Unit 1)
9Grid No. 1 - Control Grid (Pentode Unit 1)
10Grid No. 2 - Screen Grid (Pentode Unit 1)
11Plate (Pentode Unit 1)
12Heater / Internal Shield

Heater Characteristics

The heater of the 12BV11 is designed for parallel operation in equipment with a nominal 12.6 V supply. It features a controlled warm-up time to ensure reliable operation in series-parallel or coordinated heater strings.

ParameterValueUnit
Heater ArrangementParallel—
Heater Voltage (AC or DC)12.6V
Heater Current0.45 (450)A (mA)
Heater Warm-up Time11seconds

For comparison, the otherwise identical 6BV11 utilizes a series heater arrangement operating at 6.3 V with a current draw of 0.9 A (900 mA).

Direct Interelectrode Capacitances

The direct interelectrode capacitances of the 12BV11 are measured without an external shield. The values for each of the two pentode sections are symmetrical and are specified as follows:

Capacitance ParameterValueUnit
Grid No. 1 to Plate0.10pF
Grid No. 3 to Plate3.2pF
Input: Grid No. 1 to Heater, Cathode, Grid No. 2, Grid No. 3, and Internal Shield7.0pF
Grid No. 3 to All Other Electrodes8.5pF
Grid No. 1 to Grid No. 30.08pF

The low capacitance between Grid No. 1 and Grid No. 3 (0.08 pF) is critical for preventing signal leakage and maintaining isolation between the two independent control inputs of each pentode section.

Electrical Characteristics and Typical Operation

Under typical Class A1 amplifier operating conditions, each pentode section of the 12BV11 exhibits the following characteristics. In this operating state, Grid No. 3 is maintained at a DC potential of 0 volts.

ParameterValueUnit
Plate Supply Voltage150V
Grid No. 3 Voltage0V
Grid No. 2 Supply Voltage100V
Cathode Resistor180Ω
Plate Current3.1mA
Grid No. 2 Current2.4mA
Grid No. 1 Transconductance3200µmhos
Grid No. 3 Transconductance390µmhos
Plate Resistance (Approximate)0.17MΩ
Amplification Factor (Grid No. 3 to Plate)67—
Grid No. 1 Voltage (Approximate) for Plate Current of 75 µA-3.5V
Grid No. 3 Voltage (Approximate) for Plate Current of 85 µA-5.5V

The dual-control nature of the tube is reflected in the transconductance figures: Grid No. 1 provides a high transconductance of 3200 µmhos for sensitive control, while Grid No. 3 provides a lower transconductance of 390 µmhos, suitable for injection of a local oscillator or reference signal in demodulator circuits.

Maximum Ratings and Circuit Values

The maximum ratings are established under the Design-Maximum Rating System. These limits must not be exceeded under the worst-case operating conditions of supply voltage variation, component tolerances, and signal modulation.

Maximum Ratings (Each Section)

ParameterMaximum LimitUnit
DC Plate Voltage300V
Grid No. 3 (Suppressor-Grid) Positive-Bias Voltage (DC and Peak)25V
Grid No. 3 (Suppressor-Grid) Negative-Bias Voltage (DC and Peak)100V
DC Grid No. 2 (Screen-Grid) Supply Voltage300V
Grid No. 1 (Control-Grid) Positive-Bias Voltage0V
Grid No. 1 (Control-Grid) Negative-Bias Voltage50V
Plate Dissipation1.7W
Grid No. 3 Input0.1W
Grid No. 2 Input (for Grid No. 2 voltages up to 150 V)1.0W
Grid No. 2 Input (for Grid No. 2 voltages between 150 V and 300 V)See Note—

Note: For Grid No. 2 voltages between 150 V and 300 V, the maximum Grid No. 2 input is restricted and must be determined in accordance with standard screen-grid rating curves.

Maximum Circuit Values

To prevent thermal runaway and ensure bias stability, the resistance in the grid circuits must be kept within the following limits:

  • Grid No. 3 Circuit Resistance (Each Unit): 0.68 MΩ maximum.
  • Grid No. 1 Circuit Resistance (Each Unit):
    • For fixed-bias operation: 0.22 MΩ maximum.
    • For cathode-bias (self-bias) operation: 0.47 MΩ maximum.

Technical Summary

The 12BV11 is a specialized compactron twin dual-control sharp-cutoff pentode designed for color television demodulator applications. Operating with a 12.6 V, 0.45 A parallel heater, it houses two independent pentode units in a single T-9 envelope. Each unit features independent control capabilities on both Grid No. 1 and Grid No. 3, with Grid No. 1 offering a transconductance of 3200 µmhos and Grid No. 3 offering 390 µmhos under typical operating conditions. The integration of an internal shield connected to the heater at Pin 12 provides the necessary isolation between sections, provided Pin 12 is tied directly to ground. With a maximum plate voltage rating of 300 V and a plate dissipation limit of 1.7 W per section, the 12BV11 provides a compact and efficient solution for dual-control signal processing and demodulation.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
12HB
Socket code
-
Base pins
12
Nominal heater voltage
12.6 V
Nominal heater current
450 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
No

12HB - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

2 physical sections, each with unique specifications.

Section 1

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
170000 Ω
Transconductance
0.0032 S
Max plate voltage
300 V
Max screen voltage
300 V
Max plate dissipation
1.7 W

Promoted from published ratings/characteristics where directly applicable; additional published values retained in TUBE_SECTION_PARAMETER.

Section 2

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
200000 Ω
Transconductance
0.013 S
Max plate voltage
330 V
Max screen voltage
330 V
Max plate dissipation
3.1 W
Max screen dissipation
0.65 W

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1975 RCA RC30

Published operating points and test conditions from this source.

SECTION 1

Pentode

Other

  • Heater Voltage (ac/dc) 6.3

    12.6 V

    Published in approved 12BV11 target entry; Section1

  • Heater Current 0.9

    450 mA

    Published in approved 12BV11 target entry; Section1

  • Heater Warm-up Time

    11 seconds

    Published in approved 12BV11 target entry; Section1

  • DC Plate Voltage

    300 V

    Published in approved 12BV11 target entry; Section1

  • Positive-bias value

    25 V

    Published in approved 12BV11 target entry; Section1

  • Negative-bias value

    100 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage

    300 V

    Published in approved 12BV11 target entry; Section1

  • Positive-bias value

    0 V

    Published in approved 12BV11 target entry; Section1

  • Negative-bias value

    50 V

    Published in approved 12BV11 target entry; Section1

  • Plate Dissipation

    1.7 W

    Published in approved 12BV11 target entry; Section1

  • Grid-No.3 Input

    0.1 W

    Published in approved 12BV11 target entry; Section1

  • For grid-No.2 voltages up to

    150 V

    Published in approved 12BV11 target entry; Section1

  • For grid-No.2 voltages up to 150 volts

    1 W

    Published in approved 12BV11 target entry; Section1

  • For grid-No.2 voltages between 150 and

    300 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.3-Circuit Resistance

    0.68 MΩ

    Published in approved 12BV11 target entry; Section1

  • For fixed-bias operation

    0.22 MΩ

    Published in approved 12BV11 target entry; Section1

  • For cathode-bias operation

    0.47 MΩ

    Published in approved 12BV11 target entry; Section1

  • 330

    330 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.2 (Screen-Grid) Supply Voltage 330

    330 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.l (Control-Grid) Voltage, Positive-bias value 0

    0 V

    Published in approved 12BV11 target entry; Section1

  • 4

    3.1 W

    Published in approved 12BV11 target entry; Section1

  • 0.8

    0.65 W

    Published in approved 12BV11 target entry; Section1

  • Plate Voltage 125

    125 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.2 Voltage 125

    125 V

    Published in approved 12BV11 target entry; Section1

  • 56

    56 Ω

    Published in approved 12BV11 target entry; Section1

  • 0.12

    0.2 MΩ

    Published in approved 12BV11 target entry; Section1

  • For cathode-bias operation 0.25

    0.25 MΩ

    Published in approved 12BV11 target entry; Section1

Capacitance

  • Grid No.l to Plate

    0.1 pF

    Published in approved 12BV11 target entry; Section1

  • Internal Shield

    7 pF

    Published in approved 12BV11 target entry; Section1

  • Grid No.3 to All Other Electrodes

    8.5 pF

    Published in approved 12BV11 target entry; Section1

  • Grid No.l to Grid No.3

    0.08 pF

    Published in approved 12BV11 target entry; Section1

Characteristic

  • Plate Supply Voltage

    150 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.3 Voltage

    0 V

    Published in approved 12BV11 target entry; Section1

  • Grid-No.2 Supply Voltage

    100 V

    Published in approved 12BV11 target entry; Section1

  • Cathode Resistor

    180 Ω

    Published in approved 12BV11 target entry; Section1

  • Plate Current

    3.1 mA

    Published in approved 12BV11 target entry; Section1

  • Grid-No.2 Current

    2.4 mA

    Published in approved 12BV11 target entry; Section1

  • Transconductance, Grid No.l

    3200 µS

    Published in approved 12BV11 target entry; Section1

  • Transconductance, Grid No.3

    390 µS

    Published in approved 12BV11 target entry; Section1

  • Plate Resistance (Approx.)

    0.17 MΩ

    Published in approved 12BV11 target entry; Section1

  • 8500

    13000 µS

    Published in approved 12BV11 target entry; Section1

  • Plate Current 22

    11 mA

    Published in approved 12BV11 target entry; Section1

  • Grid-No.2 Current 4.8

    3.8 mA

    Published in approved 12BV11 target entry; Section1

  • 20 /iA —9.5

    -3 V

    Published in approved 12BV11 target entry; Section1