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Voltage Dual Triode Pentode ·Pentode-Triode-Triode

10AF11

Compactron triple-section tube with high-mu triode, medium-mu triode and sharp-cutoff pentode for AGC keying, sync separation and video amplification.

Directly heatedCold cathodeCommon cathodeDissimilar
Sections
3
Base
12DP
Socket code
-
Base pins
12
Nominal heater
9.8 V / 600 mA

Description

10AF11 — Triple-Section Compactron Vacuum Tube

The 10AF11 is a multi-section vacuum tube designed in the Compactron envelope configuration. It integrates three distinct active electronic systems within a single glass envelope: a high-mu triode (designated Triode No. 1), a medium-mu triode (designated Triode No. 2), and a sharp-cutoff pentode. This combination of diverse tube structures is specifically tailored for television receiver applications, serving functions such as an automatic gain control (AGC) keyer, a sync separator, and a video amplifier.

Mechanical Construction, Base, and Physical Dimensions

The 10AF11 is built using the Compactron T-9 construction style, which provides a compact, multi-pin layout suitable for high-density chassis designs. The tube features a button 12-pin base, designated as the E12-70 type, and utilizes the 12DP basing arrangement.

The physical dimensions of the device are defined by the 9-58 outline specification:

  • Maximum Diameter: 1.188 inches
  • Maximum Seated Height: 2.250 inches
  • Maximum Overall Height: 2.625 inches

Heater Specifications and Ratings

The heater of the 10AF11 is designed for series-string operation, featuring a controlled warm-up characteristic. The heater parameters and electrical insulation limits between the heater and the cathodes are as follows:

ParameterValue
Heater ConnectionSeries
Heater Voltage9.8 V
Heater Current600 mA
Heater Warm-up Time11 seconds

Heater-Cathode Voltage Limits

To prevent insulation breakdown and minimize noise, the potential difference between the heater and the individual cathodes must be kept within the following design-maximum limits:

  • Heater Negative with Respect to Cathode: 200 Volts maximum (Total DC and Peak)
  • Heater Positive with Respect to Cathode:
    • DC: 100 Volts maximum
    • Total DC and Peak: 200 Volts maximum

Electrical Characteristics and Typical Operating Points

Each of the three sections in the 10AF11 exhibits distinct electrical characteristics optimized for its respective role.

Triode No. 1 (High-Mu Triode)

Triode No. 1 is designed for high voltage gain. Under typical operating conditions, it exhibits the following characteristics:

  • Plate Voltage: 200 V
  • Grid Voltage: -2.0 V
  • Amplification Factor (\u03bc): 68
  • Plate Resistance (Approximate): 12,400 \u03a9
  • Transconductance (gmg_m): 5,500 \u03bcmhos
  • Plate Current: 7.0 mA
  • Grid Voltage for Cutoff (at Ib=10 μAI_b = 10\ \mu\text{A}): -5.5 V (approximate)

Triode No. 2 (Medium-Mu Triode)

Triode No. 2 offers moderate amplification with lower plate resistance and higher current capability. Its typical operation is specified using cathode bias:

  • Plate Voltage: 200 V
  • Cathode-Bias Resistor: 220 \u03a9
  • Amplification Factor (\u03bc): 41
  • Plate Resistance (Approximate): 9,400 \u03a9
  • Transconductance (gmg_m): 4,400 \u03bcmhos
  • Plate Current: 9.2 mA
  • Grid Voltage for Cutoff (at Ib=10 μAI_b = 10\ \mu\text{A}): -6.5 V (approximate)

Pentode Section (Sharp Cutoff)

The pentode section is characterized under two distinct operating conditions to illustrate its performance in different circuit configurations:

ParameterCondition ACondition B
Plate Voltage50 V200 V
Screen Voltage150 V150 V
Grid No. 1 Voltage0 V—
Cathode-Bias Resistor—100 \u03a9
Plate Resistance (Approximate)—68,000 \u03a9
Transconductance (gmg_m)—11,000 \u03bcmhos
Plate Current55 mA24 mA
Screen Current18 mA4.8 mA
Grid No. 1 Cutoff Voltage (at Ib=100 μAI_b = 100\ \mu\text{A})—-10 V (approximate)

Design-Maximum Ratings

The design-maximum rating system defines the absolute limits within which the 10AF11 must be operated to ensure reliability and longevity. These ratings are specified individually for each section:

Triode No. 1

  • Plate Voltage: 330 V maximum
  • Positive DC Grid Voltage: 0 V maximum
  • Plate Dissipation: 1.1 W maximum
  • Maximum Grid Circuit Resistance:
    • Fixed Bias: 0.5 M\u03a9
    • Cathode Bias: 1.0 M\u03a9

Triode No. 2

  • Plate Voltage: 330 V maximum
  • Positive DC Grid Voltage: 0 V maximum
  • Plate Dissipation: 2.0 W maximum
  • Maximum Grid Circuit Resistance:
    • Fixed Bias: 0.5 M\u03a9
    • Cathode Bias: 1.0 M\u03a9

Pentode Section

  • Plate Voltage: 330 V maximum
  • Screen Supply Voltage: 330 V maximum
  • Positive DC Grid No. 1 Voltage: 0 V maximum
  • Plate Dissipation: 5.0 W maximum
  • Screen Dissipation: 1.25 W maximum
  • Maximum Grid No. 1 Circuit Resistance:
    • Fixed Bias: 0.25 M\u03a9
    • Cathode Bias: 1.0 M\u03a9

Direct Interelectrode Capacitances

The direct interelectrode capacitances of the 10AF11 are measured without an external shield. The input and output capacitance values are referenced to specific internal elements and the heater.

Section-Specific Capacitances

  • Triode No. 1:
    • Grid to Plate: 1.9 pF
    • Input (1Tg11Tg1 to [1Tk+2Tk+Pk+Pg3+h+IS1Tk + 2Tk + Pk + Pg3 + h + IS]): 3.0 pF
    • Output (1Tp1Tp to [1Tk+2Tk+Pk+Pg3+h+IS1Tk + 2Tk + Pk + Pg3 + h + IS]): 2.2 pF
  • Triode No. 2:
    • Grid to Plate: 3.6 pF
    • Input (2Tg12Tg1 to [2Tk+Pk+Pg3+h+IS2Tk + Pk + Pg3 + h + IS]): 2.4 pF
    • Output (2Tp2Tp to [2Tk+Pk+Pg3+h+IS2Tk + Pk + Pg3 + h + IS]): 3.8 pF
  • Pentode Section:
    • Grid to Plate: 0.12 pF
    • Input (Pg1Pg1 to [2Tk+Pk+Pg2+Pg3+h+IS2Tk + Pk + Pg2 + Pg3 + h + IS]): 10.0 pF
    • Output (PpPp to [2Tk+Pk+Pg2+Pg3+h+IS2Tk + Pk + Pg2 + Pg3 + h + IS]): 4.5 pF

(Note: 1Tg11Tg1, 2Tg12Tg1, and Pg1Pg1 represent the control grids; 1Tp1Tp, 2Tp2Tp, and PpPp represent the plates; 1Tk1Tk, 2Tk2Tk, and PkPk represent the cathodes; Pg2Pg2 and Pg3Pg3 represent the pentode screen and suppressor grids; hh represents the heater; and ISIS represents the internal shield.)

Inter-Section Coupling

To minimize crosstalk and unwanted feedback between the independent sections, the internal layout is designed for low capacitive coupling:

  • Pentode Plate to Triode No. 2 Plate: 0.045 pF maximum
  • Triode No. 1 Plate to Triode No. 2 Plate: 0.06 pF maximum

Technical Summary

The 10AF11 is a versatile Compactron vacuum tube containing three independent active sections: a high-mu triode, a medium-mu triode, and a sharp-cutoff pentode. Operating with a 9.8 V, 600 mA series heater, it is optimized for television receiver circuitry, specifically as an AGC keyer, sync separator, and video amplifier. By combining these three distinct structures into a single T-9 envelope with a 12-pin button base, the 10AF11 reduces component count and space requirements while maintaining high performance across all three stages.

General specifications

Tube and section characteristics

Properties common to every published source and operating point.

Heater and base

Base
12DP
Socket code
-
Base pins
12
Nominal heater voltage
9.8 V
Nominal heater current
600 mA
Parallel heater voltage
-
Parallel heater current
-
Series capable
Yes

12DP - Terminal pinout

Electrical assignments shared by every tube using this base designation.

No verified pinout is recorded for this base designation.

Section ratings

3 physical sections, each with unique specifications.

Section 1

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
12400 Ω
Transconductance
0.0055 S
Amplification factor
68
Max plate voltage
330 V
Max plate dissipation
1.1 W

High-mu triode 1; typical Va 200 V, Vg -2.0 V, Ia 7.0 mA. Cgp 1.9 pF, Cin 3.0 pF, Cout 2.2 pF. Grid circuit resistance max fixed bias 0.5 MΩ, cathode bias 1.0 MΩ.

Section 2

Triode

X-ray radiationInterelectrode capacitances
Plate resistance
9400 Ω
Transconductance
0.0044 S
Amplification factor
41
Max plate voltage
330 V
Max plate dissipation
2 W

Medium-mu triode 2; typical Va 200 V, Rk 220 Ω, Ia 9.2 mA. Cgp 3.6 pF, Cin 2.4 pF, Cout 3.8 pF. Grid circuit resistance max fixed bias 0.5 MΩ, cathode bias 1.0 MΩ.

Section 3

Pentode

X-ray radiationInterelectrode capacitances
Plate resistance
68000 Ω
Transconductance
0.011 S
Max plate voltage
330 V
Max screen voltage
330 V
Max plate dissipation
5 W
Max screen dissipation
1.25 W

Sharp-cutoff pentode; typical conditions: Va 50 V, Vs 150 V, Vg1 0 V, Ia 55 mA, Is 18 mA; alternatively Va 200 V, Vs 150 V, Rk 100 Ω, Ia 24 mA, Is 4.8 mA. rp 68kΩ and gm 11mS at 200V. Cgp 0.12 pF, Cin 10 pF, Cout 4.5 pF. Grid circuit resistance max fixed bias 0.25 MΩ, cathode bias 1.0 MΩ.

Source-dependent data

Operating conditions by source

Each block preserves the test conditions and published values from one reference. Values from different sources are intentionally kept separate.

Data set 01

1970 Sylvania Technical Manual

Published operating points and test conditions from this source.

SECTION 1

Triode

Other

  • Grid To Plate Capacitance

    1.9 pF

    Unshielded, direct interelectrode capacitance

  • Input Capacitance

    3 pF

    Unshielded input capacitance

  • Output Capacitance

    2.2 pF

    Unshielded output capacitance

  • Plate Voltage

    200 V

    Typical triode 1

  • Grid Voltage

    -2 V

    Typical triode 1

  • Plate Current

    7 mA

    Typical triode 1

  • Heater Warmup Time

    11 s

    10AF11 heater warm-up time

SECTION 2

Triode

Other

  • Grid To Plate Capacitance

    3.6 pF

    Unshielded, direct interelectrode capacitance

  • Input Capacitance

    2.4 pF

    Unshielded input capacitance

  • Output Capacitance

    3.8 pF

    Unshielded output capacitance

  • Plate Voltage

    200 V

    Typical triode 2

  • Cathode Bias Resistor

    220 Ω

    Typical triode 2 cathode bias

  • Plate Current

    9.2 mA

    Typical triode 2

SECTION 3

Pentode

Other

  • Grid To Plate Capacitance

    0.12 pF

    Unshielded, direct interelectrode capacitance

  • Input Capacitance

    10 pF

    Unshielded input capacitance

  • Output Capacitance

    4.5 pF

    Unshielded output capacitance

  • Plate Voltage

    50 V

    Typical operating point 1

  • Screen Voltage

    150 V

    Typical operating point 1

  • Grid Voltage

    0 V

    Typical operating point 1

  • Plate Current

    55 mA

    Typical operating point 1

  • Screen Current

    18 mA

    Typical operating point 1

  • Plate Voltage

    200 V

    Typical operating point 2

  • Screen Voltage

    150 V

    Typical operating point 2

  • Cathode Bias Resistor

    100 Ω

    Typical operating point 2

  • Plate Current

    24 mA

    Typical operating point 2

  • Screen Current

    4.8 mA

    Typical operating point 2